JPS56162874A - Manufacture of mos semiconductor device - Google Patents
Manufacture of mos semiconductor deviceInfo
- Publication number
- JPS56162874A JPS56162874A JP6664580A JP6664580A JPS56162874A JP S56162874 A JPS56162874 A JP S56162874A JP 6664580 A JP6664580 A JP 6664580A JP 6664580 A JP6664580 A JP 6664580A JP S56162874 A JPS56162874 A JP S56162874A
- Authority
- JP
- Japan
- Prior art keywords
- oxidized film
- gate
- source
- film
- drain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
- 229920005591 polysilicon Polymers 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000010030 laminating Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 230000001590 oxidative effect Effects 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6664580A JPS56162874A (en) | 1980-05-20 | 1980-05-20 | Manufacture of mos semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6664580A JPS56162874A (en) | 1980-05-20 | 1980-05-20 | Manufacture of mos semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS56162874A true JPS56162874A (en) | 1981-12-15 |
Family
ID=13321831
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6664580A Pending JPS56162874A (en) | 1980-05-20 | 1980-05-20 | Manufacture of mos semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56162874A (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58219765A (ja) * | 1982-06-15 | 1983-12-21 | Oki Electric Ind Co Ltd | 半導体集積回路の製造方法 |
US4868137A (en) * | 1987-12-29 | 1989-09-19 | Nec Corporation | Method of making insulated-gate field effect transistor |
-
1980
- 1980-05-20 JP JP6664580A patent/JPS56162874A/ja active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58219765A (ja) * | 1982-06-15 | 1983-12-21 | Oki Electric Ind Co Ltd | 半導体集積回路の製造方法 |
JPH05868B2 (ja) * | 1982-06-15 | 1993-01-06 | Oki Electric Ind Co Ltd | |
US4868137A (en) * | 1987-12-29 | 1989-09-19 | Nec Corporation | Method of making insulated-gate field effect transistor |
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