JPS56158454A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS56158454A JPS56158454A JP6430980A JP6430980A JPS56158454A JP S56158454 A JPS56158454 A JP S56158454A JP 6430980 A JP6430980 A JP 6430980A JP 6430980 A JP6430980 A JP 6430980A JP S56158454 A JPS56158454 A JP S56158454A
- Authority
- JP
- Japan
- Prior art keywords
- molybdenum
- layer
- silicide
- polycrystalline
- molybdenum silicide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6430980A JPS56158454A (en) | 1980-05-12 | 1980-05-12 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6430980A JPS56158454A (en) | 1980-05-12 | 1980-05-12 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS56158454A true JPS56158454A (en) | 1981-12-07 |
Family
ID=13254504
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6430980A Pending JPS56158454A (en) | 1980-05-12 | 1980-05-12 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56158454A (ja) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5793524A (en) * | 1980-12-03 | 1982-06-10 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS58134427A (ja) * | 1982-02-05 | 1983-08-10 | Nec Corp | 半導体装置の製造方法 |
JPS58200531A (ja) * | 1982-05-18 | 1983-11-22 | Oki Electric Ind Co Ltd | 半導体装置の製造方法 |
JPS59100520A (ja) * | 1982-11-30 | 1984-06-09 | Fujitsu Ltd | 半導体装置の製造方法 |
JPS59136970A (ja) * | 1983-01-27 | 1984-08-06 | Seiko Instr & Electronics Ltd | 半導体装置 |
JP2012114480A (ja) * | 2003-08-14 | 2012-06-14 | Cree Inc | 金属−炭化珪素オーミックコンタクトの局所的アニーリングおよびそのようにして形成された素子 |
-
1980
- 1980-05-12 JP JP6430980A patent/JPS56158454A/ja active Pending
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5793524A (en) * | 1980-12-03 | 1982-06-10 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS6328336B2 (ja) * | 1980-12-03 | 1988-06-08 | Fujitsu Ltd | |
JPS58134427A (ja) * | 1982-02-05 | 1983-08-10 | Nec Corp | 半導体装置の製造方法 |
JPH0154853B2 (ja) * | 1982-02-05 | 1989-11-21 | Nippon Electric Co | |
JPS58200531A (ja) * | 1982-05-18 | 1983-11-22 | Oki Electric Ind Co Ltd | 半導体装置の製造方法 |
JPH0410218B2 (ja) * | 1982-05-18 | 1992-02-24 | ||
JPS59100520A (ja) * | 1982-11-30 | 1984-06-09 | Fujitsu Ltd | 半導体装置の製造方法 |
JPH024131B2 (ja) * | 1982-11-30 | 1990-01-26 | Fujitsu Ltd | |
JPS59136970A (ja) * | 1983-01-27 | 1984-08-06 | Seiko Instr & Electronics Ltd | 半導体装置 |
JP2012114480A (ja) * | 2003-08-14 | 2012-06-14 | Cree Inc | 金属−炭化珪素オーミックコンタクトの局所的アニーリングおよびそのようにして形成された素子 |
US9608166B2 (en) | 2003-08-14 | 2017-03-28 | Cree, Inc. | Localized annealing of metal-silicon carbide ohmic contacts and devices so formed |
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