JPS56158454A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS56158454A
JPS56158454A JP6430980A JP6430980A JPS56158454A JP S56158454 A JPS56158454 A JP S56158454A JP 6430980 A JP6430980 A JP 6430980A JP 6430980 A JP6430980 A JP 6430980A JP S56158454 A JPS56158454 A JP S56158454A
Authority
JP
Japan
Prior art keywords
molybdenum
layer
silicide
polycrystalline
molybdenum silicide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6430980A
Other languages
English (en)
Inventor
Sotohisa Asai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP6430980A priority Critical patent/JPS56158454A/ja
Publication of JPS56158454A publication Critical patent/JPS56158454A/ja
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP6430980A 1980-05-12 1980-05-12 Manufacture of semiconductor device Pending JPS56158454A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6430980A JPS56158454A (en) 1980-05-12 1980-05-12 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6430980A JPS56158454A (en) 1980-05-12 1980-05-12 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS56158454A true JPS56158454A (en) 1981-12-07

Family

ID=13254504

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6430980A Pending JPS56158454A (en) 1980-05-12 1980-05-12 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS56158454A (ja)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5793524A (en) * 1980-12-03 1982-06-10 Fujitsu Ltd Manufacture of semiconductor device
JPS58134427A (ja) * 1982-02-05 1983-08-10 Nec Corp 半導体装置の製造方法
JPS58200531A (ja) * 1982-05-18 1983-11-22 Oki Electric Ind Co Ltd 半導体装置の製造方法
JPS59100520A (ja) * 1982-11-30 1984-06-09 Fujitsu Ltd 半導体装置の製造方法
JPS59136970A (ja) * 1983-01-27 1984-08-06 Seiko Instr & Electronics Ltd 半導体装置
JP2012114480A (ja) * 2003-08-14 2012-06-14 Cree Inc 金属−炭化珪素オーミックコンタクトの局所的アニーリングおよびそのようにして形成された素子

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5793524A (en) * 1980-12-03 1982-06-10 Fujitsu Ltd Manufacture of semiconductor device
JPS6328336B2 (ja) * 1980-12-03 1988-06-08 Fujitsu Ltd
JPS58134427A (ja) * 1982-02-05 1983-08-10 Nec Corp 半導体装置の製造方法
JPH0154853B2 (ja) * 1982-02-05 1989-11-21 Nippon Electric Co
JPS58200531A (ja) * 1982-05-18 1983-11-22 Oki Electric Ind Co Ltd 半導体装置の製造方法
JPH0410218B2 (ja) * 1982-05-18 1992-02-24
JPS59100520A (ja) * 1982-11-30 1984-06-09 Fujitsu Ltd 半導体装置の製造方法
JPH024131B2 (ja) * 1982-11-30 1990-01-26 Fujitsu Ltd
JPS59136970A (ja) * 1983-01-27 1984-08-06 Seiko Instr & Electronics Ltd 半導体装置
JP2012114480A (ja) * 2003-08-14 2012-06-14 Cree Inc 金属−炭化珪素オーミックコンタクトの局所的アニーリングおよびそのようにして形成された素子
US9608166B2 (en) 2003-08-14 2017-03-28 Cree, Inc. Localized annealing of metal-silicon carbide ohmic contacts and devices so formed

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