JPS561539A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS561539A
JPS561539A JP7644079A JP7644079A JPS561539A JP S561539 A JPS561539 A JP S561539A JP 7644079 A JP7644079 A JP 7644079A JP 7644079 A JP7644079 A JP 7644079A JP S561539 A JPS561539 A JP S561539A
Authority
JP
Japan
Prior art keywords
layers
layer
porous
recess
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7644079A
Other languages
Japanese (ja)
Inventor
Masao Shimada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP7644079A priority Critical patent/JPS561539A/en
Publication of JPS561539A publication Critical patent/JPS561539A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers

Abstract

PURPOSE:To absorb stress due to volume expansion caused by oxidation and prevent Si crystal from becoming defective, by providing recesses along the boundaries of porous insulating layers of Si on the surface of single crystal of Si. CONSTITUTION:Openings are made in an SiO2 layer 3 on a substrate 2 to produce diffused phosphorus layers 4. After the SiO2 layer 3 is removed, a resist mask 7 is provided and dry etching is effected to make recesses 6. The depth of each recess is set large enough to absorb stress at the time of production of an insulating film. The mask 7 is removed. Porous Si layers 5 are manufactured by nonelectrolytic chemical porous treatment. Thin silica films are coated to seal up the pores of the layers 5. A porous insulating layer 3 of Si is produced on the layers 5 under high-temperature steam. At that time, the volume of each layer 5 expands greatly but most of stress transmitted toward the region around the layer 5 is absorbed by the recess 6. For this reason, no crystal defects are caused. This results in manufacturing an excellent semiconductor device.
JP7644079A 1979-06-18 1979-06-18 Semiconductor device Pending JPS561539A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7644079A JPS561539A (en) 1979-06-18 1979-06-18 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7644079A JPS561539A (en) 1979-06-18 1979-06-18 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS561539A true JPS561539A (en) 1981-01-09

Family

ID=13605203

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7644079A Pending JPS561539A (en) 1979-06-18 1979-06-18 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS561539A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58500261A (en) * 1981-03-24 1983-02-17 アレフエルト，ゲオルク Multistage device with working fluid circuit and absorption circuit and method of its operation

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58500261A (en) * 1981-03-24 1983-02-17 アレフエルト，ゲオルク Multistage device with working fluid circuit and absorption circuit and method of its operation

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