JPS56146279A - Insulating gate type field-effect transistor - Google Patents

Insulating gate type field-effect transistor

Info

Publication number
JPS56146279A
JPS56146279A JP4983180A JP4983180A JPS56146279A JP S56146279 A JPS56146279 A JP S56146279A JP 4983180 A JP4983180 A JP 4983180A JP 4983180 A JP4983180 A JP 4983180A JP S56146279 A JPS56146279 A JP S56146279A
Authority
JP
Japan
Prior art keywords
matching
self
substrate
phosphor glass
gate electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4983180A
Other languages
Japanese (ja)
Inventor
Isamu Miyagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP4983180A priority Critical patent/JPS56146279A/en
Publication of JPS56146279A publication Critical patent/JPS56146279A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To miniaturize the geometrical shape and also to perform the high-speed operation of the subject transistor by a method wherein a source region and a drain region are formed on the phosphor glass film in the substrate by performing a self- matching and an ohmic lead-out wiring is led out to a gate electrode by performing a self-matching. CONSTITUTION:The main surface and the side of the gate electrode 8 are covered by phosphor glass 7 on the one-conductive type semiconductor substrate 1. The source region 9 and the drain region 10, having the reversed conductive type to the substrate 1, are formed on the phosphor glass in the substrate by self-matching. The ohmic lead-out wiring 12 coming from the source region 9 and the drain region 10 are led out to the gate electrode 8, holding the phosphor glass film 7 between them, by performing self-matching.
JP4983180A 1980-04-16 1980-04-16 Insulating gate type field-effect transistor Pending JPS56146279A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4983180A JPS56146279A (en) 1980-04-16 1980-04-16 Insulating gate type field-effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4983180A JPS56146279A (en) 1980-04-16 1980-04-16 Insulating gate type field-effect transistor

Publications (1)

Publication Number Publication Date
JPS56146279A true JPS56146279A (en) 1981-11-13

Family

ID=12842020

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4983180A Pending JPS56146279A (en) 1980-04-16 1980-04-16 Insulating gate type field-effect transistor

Country Status (1)

Country Link
JP (1) JPS56146279A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0319846U (en) * 1989-03-22 1991-02-27

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0319846U (en) * 1989-03-22 1991-02-27

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