JPS56142649A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS56142649A
JPS56142649A JP4460480A JP4460480A JPS56142649A JP S56142649 A JPS56142649 A JP S56142649A JP 4460480 A JP4460480 A JP 4460480A JP 4460480 A JP4460480 A JP 4460480A JP S56142649 A JPS56142649 A JP S56142649A
Authority
JP
Japan
Prior art keywords
region
type
channel
channel stopper
oxide film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4460480A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6310900B2 (enrdf_load_stackoverflow
Inventor
Toshikatsu Shirasawa
Kiyoshi Tsukuda
Yoshitaka Sugawara
Yoshikazu Hosokawa
Tatsuya Kamei
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP4460480A priority Critical patent/JPS56142649A/ja
Publication of JPS56142649A publication Critical patent/JPS56142649A/ja
Publication of JPS6310900B2 publication Critical patent/JPS6310900B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76297—Dielectric isolation using EPIC techniques, i.e. epitaxial passivated integrated circuit

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
JP4460480A 1980-04-07 1980-04-07 Semiconductor device Granted JPS56142649A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4460480A JPS56142649A (en) 1980-04-07 1980-04-07 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4460480A JPS56142649A (en) 1980-04-07 1980-04-07 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS56142649A true JPS56142649A (en) 1981-11-07
JPS6310900B2 JPS6310900B2 (enrdf_load_stackoverflow) 1988-03-10

Family

ID=12696045

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4460480A Granted JPS56142649A (en) 1980-04-07 1980-04-07 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS56142649A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0596414A3 (en) * 1992-11-06 1997-10-15 Hitachi Ltd Semiconductor integrated circuit device comprising a dielectric isolation structure.

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5164876A (ja) * 1974-12-03 1976-06-04 Nippon Electric Co Zetsuengeetogatadenkaikokahandotaisochinoseizohoho

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5164876A (ja) * 1974-12-03 1976-06-04 Nippon Electric Co Zetsuengeetogatadenkaikokahandotaisochinoseizohoho

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0596414A3 (en) * 1992-11-06 1997-10-15 Hitachi Ltd Semiconductor integrated circuit device comprising a dielectric isolation structure.
US5747829A (en) * 1992-11-06 1998-05-05 Hitachi, Ltd. Dielectric isolated high voltage semiconductor device

Also Published As

Publication number Publication date
JPS6310900B2 (enrdf_load_stackoverflow) 1988-03-10

Similar Documents

Publication Publication Date Title
US3958266A (en) Deep depletion insulated gate field effect transistors
US4242697A (en) Dielectrically isolated high voltage semiconductor devices
GB1242896A (en) Semiconductor device and method of fabrication
JPS57196573A (en) Manufacture of mos type semiconductor device
JPS55151363A (en) Mos semiconductor device and fabricating method of the same
JPS57201070A (en) Semiconductor device
US3892609A (en) Production of mis integrated devices with high inversion voltage to threshold voltage ratios
JPS56142649A (en) Semiconductor device
GB968106A (en) Improvements in or relating to semiconductor devices
JPS5691470A (en) Semiconductor
JPS55107229A (en) Method of manufacturing semiconductor device
JPS5685858A (en) Semiconductor device
JPS6411343A (en) Manufacture of semiconductor device
JPS5723262A (en) Manufacture of semiconductor device
JPS5539631A (en) Semiconductor device
JPS56112762A (en) Semiconductor device
JPS572576A (en) Semiconductor device
JPS55133556A (en) Planar semiconductor device and method of fabricating the same
JPS52146568A (en) Production of silicon gate mos type semiconductor integrated circuit device
JPS56122164A (en) High withstand voltage semiconductor device
JPS5563876A (en) Field-effect semiconductor device
JPS57211278A (en) Semiconductor device
JPS55121680A (en) Manufacture of semiconductor device
JPS5680171A (en) Semiconductor device
JPS57126170A (en) Semiconductor constant voltage device