JPS56138955A - Field effect transistor - Google Patents

Field effect transistor

Info

Publication number
JPS56138955A
JPS56138955A JP4260580A JP4260580A JPS56138955A JP S56138955 A JPS56138955 A JP S56138955A JP 4260580 A JP4260580 A JP 4260580A JP 4260580 A JP4260580 A JP 4260580A JP S56138955 A JPS56138955 A JP S56138955A
Authority
JP
Japan
Prior art keywords
electrode
gate
capacitor
schottky barrier
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4260580A
Other languages
Japanese (ja)
Inventor
Yoshito Ogawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP4260580A priority Critical patent/JPS56138955A/en
Publication of JPS56138955A publication Critical patent/JPS56138955A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0605—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits made of compound material, e.g. AIIIBV

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To protect a Schottky barrier by connecting a protection capacitor in parallel between the Schottky barrier gate and the source of III-V group compound FET and thus absorbing the incoming surge input with the capacitor. CONSTITUTION:A buffer layer 12 and an active layer 13 are formed on a chromium-doped gallium arsenide crystalline substrate 11. Aluminum is used for the Schottky barrier metal becoming a gate electrode 14. AuGe is used for the ohmic contact electrode of the source electrode 15 and the drain electrode 16. Silicon dioxide film 17 is grown in vapor phase on a part of the source electrode, and a capacitor electrode 18 made of aluminum is formed thereon. The electrode 18 is connected via a wire 19 to the gate electrode 14. Since the incoming surge energy applied to the Shottky barrier gate is distributed to the capacitors, it is reduced to protect the Shottky barrier.
JP4260580A 1980-04-01 1980-04-01 Field effect transistor Pending JPS56138955A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4260580A JPS56138955A (en) 1980-04-01 1980-04-01 Field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4260580A JPS56138955A (en) 1980-04-01 1980-04-01 Field effect transistor

Publications (1)

Publication Number Publication Date
JPS56138955A true JPS56138955A (en) 1981-10-29

Family

ID=12640667

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4260580A Pending JPS56138955A (en) 1980-04-01 1980-04-01 Field effect transistor

Country Status (1)

Country Link
JP (1) JPS56138955A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5079609A (en) * 1988-12-28 1992-01-07 Mitsubishi Denki Kabushiki Kaisha Semiconductor device having dielectric breakdown protection element and method of fabricating same
WO2013156741A1 (en) * 2012-04-18 2013-10-24 Commissariat A L'energie Atomique Et Aux Energies Alternatives Semi-conductive device comprising a field effect transistor and a capacitor for protecting said transistor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5079609A (en) * 1988-12-28 1992-01-07 Mitsubishi Denki Kabushiki Kaisha Semiconductor device having dielectric breakdown protection element and method of fabricating same
WO2013156741A1 (en) * 2012-04-18 2013-10-24 Commissariat A L'energie Atomique Et Aux Energies Alternatives Semi-conductive device comprising a field effect transistor and a capacitor for protecting said transistor
FR2989827A1 (en) * 2012-04-18 2013-10-25 Commissariat Energie Atomique SEMICONDUCTOR DEVICE HAVING FIELD EFFECT TRANSISTOR AND PROTECTIVE CAPACITOR OF SAID TRANSISTOR

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