JP2592232B2 - Optical semiconductor device - Google Patents
Optical semiconductor deviceInfo
- Publication number
- JP2592232B2 JP2592232B2 JP60111376A JP11137685A JP2592232B2 JP 2592232 B2 JP2592232 B2 JP 2592232B2 JP 60111376 A JP60111376 A JP 60111376A JP 11137685 A JP11137685 A JP 11137685A JP 2592232 B2 JP2592232 B2 JP 2592232B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- optical semiconductor
- wsi
- dark current
- msm
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims description 12
- 230000003287 optical effect Effects 0.000 title claims description 8
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 11
- 230000004888 barrier function Effects 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type
- H01L31/1085—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type the devices being of the Metal-Semiconductor-Metal [MSM] Schottky barrier type
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
Description
【発明の詳細な説明】 〔概要〕 本発明は、化合物半導体を用いたトランジスタと組み
合わせるのに好適とされているMSMフォト・ダイオード
を有してなる光半導体装置に於いて、MSMフォト・ダイ
オードの能動層を構成する材料としてGaAsを、また、電
極を構成する材料としてWSixを用いることに依り、暗電
流を最小とし、S/Nが良好な受信系を得ることができる
ようにする。DETAILED DESCRIPTION OF THE INVENTION [Summary] The present invention relates to an optical semiconductor device having an MSM photodiode which is suitable for being combined with a transistor using a compound semiconductor. the GaAs as the material constituting the active layer, also, depending on the use of WSi x as the material constituting the electrodes, and the dark current minimized, S / N to be able to obtain good reception system.
〔産業上の利用分野〕 本発明は、MSM（metal semiconductor metal）フォト
・ダイオードを有する光半導体装置の改良に関する。[Industrial Application Field] The present invention relates to an improvement in an optical semiconductor device having a metal semiconductor metal (MSM) photodiode.
従来、トランジスタと集積化するのに好適なフォト・
ダイオードとしてMSMフォト・ダイオードが知られてい
る。Conventionally, photo and photo transistors suitable for integration with transistors
MSM photodiodes are known as diodes.
第４図はMSMフォト・ダイオードの要部平面図を表し
ている。FIG. 4 is a plan view of a main part of the MSM photodiode.
図に於いて、２はGaAs能動層、４及び５は電極をそれ
ぞれ示している。尚、光は電極４及び５に於ける櫛歯状
の部分に入射される。In the figure, 2 indicates a GaAs active layer, and 4 and 5 indicate electrodes, respectively. The light is incident on the comb-like portions of the electrodes 4 and 5.
第５図は第４図に見られる線Ａ−Ａ′で切断した状態
のMSMフォト・ダイオードの要部切断側面図を表し、第
４図に於いて用いた記号と同記号は同部分を表すか或い
は同じ意味を持つものとする。FIG. 5 is a cutaway side view of the main part of the MSM photodiode cut along the line AA 'shown in FIG. 4, and the same symbols and symbols used in FIG. 4 indicate the same parts. Or have the same meaning.
図に於いて、１は半絶縁性GaAs基板、３は窒化シリコ
ン（SiN）膜をそれぞれ示している。In the figure, 1 indicates a semi-insulating GaAs substrate, and 3 indicates a silicon nitride (SiN) film.
第４図及び第５図に見られるようなMSMフォト・ダイ
オードにトランジスタ、例えば、MESFET（metal semico
nductor field effect transistor）を組み合わせて光
半導体装置を構成するには、GaAs能動層２上に更にGaAs
能動層を形成し、そこにショットキ・ゲート電極、オー
ミック・コンタクト・ソース電極及び同じくオーミック
・コンタクト・ドレイン電極を形成するようにしてい
る。尚、その場合、GaAs能動層２はバッファ層として作
用する。A transistor such as a MESFET (metal semico) is connected to the MSM photodiode as seen in FIGS.
In order to form an optical semiconductor device by combining an nductor field effect transistor), a GaAs
An active layer is formed, on which a Schottky gate electrode, an ohmic contact source electrode, and also an ohmic contact drain electrode are formed. In this case, the GaAs active layer 2 functions as a buffer layer.
第４図及び第５図に関して説明したMSMフォト・ダイ
オードに於いては、電極４及び５としてアルミニウム
（Al）を用いている。In the MSM photodiode described with reference to FIGS. 4 and 5, aluminum (Al) is used for the electrodes 4 and 5.
このような構成のMSMフォト・ダイオードでは、暗電
流が非常に大きく、最小受信レベルが充分に低い受信系
を作成することは甚だ困難である。With the MSM photodiode having such a configuration, it is extremely difficult to create a receiving system having a very large dark current and a sufficiently low minimum receiving level.
本発明は、極めて簡単な技術を適用することに依り、
暗電流が少ないMSMフォト・ダイオードを得ることがで
きるようにし、S/Nが良好な受信系の構成を可能にす
る。The present invention relies on applying a very simple technique,
The present invention makes it possible to obtain an MSM photodiode with a small dark current, and enables the configuration of a receiving system with a good S / N.
第１図は本発明者が行った実験の結果を線図に纏めた
ものであり、MSMフォト・ダイオードの暗電流とMSMフォ
ト・ダイオードの電極を構成する金属に依存するバリヤ
・ハイトとの関係を表すものであり、縦軸には暗電流
を、また、横軸にはバリヤ・ハイトをそれぞれ採ってあ
る。尚、このバリヤ・ハイトはｎ型GaAsに対して図に示
してある各金属電極を形成した場合のそれであり、ま
た、このデータを得た際に於けるバイアス電圧は10
〔Ｖ〕である。FIG. 1 is a diagram summarizing the results of an experiment conducted by the inventor, showing the relationship between the dark current of the MSM photodiode and the barrier height depending on the metal constituting the electrode of the MSM photodiode. The vertical axis represents dark current, and the horizontal axis represents barrier height. Note that this barrier height is obtained when each metal electrode shown in the figure is formed on n-type GaAs.
[V].
第１図から判るように、WSixを用いたときの暗電流が
最も小さい値を示している。As can be seen from Figure 1, the dark current indicates the smallest value when using the WSi x.
そこで、本発明の光半導体装置では、GaAsを材料とす
る能動層にWSixを材料とする電極を形成したMSMフォト
・ダイオードを有してなる構成を採っている。Therefore, in the optical semiconductor device of the present invention adopts a configuration comprising a MSM photodiode having electrodes formed of a WSi x and material in the active layer of GaAs and the material.
第２図はMSMフォト・ダイオードのエネルギ・バンド
・ダイヤグラムを表している。FIG. 2 shows an energy band diagram of the MSM photodiode.
図に於いて、Ｍは金属電極、Ｓは半導体層、Ｖはバイ
アス電圧、φbnはコンダクション・バンドからのバリヤ
・ハイト、φbpはバレンス・バンドからのバリヤ・ハイ
ト、jeは注入エレクトロン、jhは注入ホールをそれぞれ
示している。In FIG, M is a metal electrode, S is a semiconductor layer, V is the bias voltage, phi bn is the barrier height from conduction band, phi bp is barrier height from valence band, j e is injected electrons , J h indicate injection holes, respectively.
さて、バリヤ・ハイトφbnが大であると注入エレクト
ロンjeは少ないが、φbp＝Eg−φbnであるから注入ホー
ルjhは多くなる。尚、Egはエネルギ・バンド・ギャップ
である。Well, the barrier height φ bn is but the injection electrons j e is small is large, injection holes j h because it is φ bp = E g -φ bn increases. In addition, E g is the energy band gap.
また、逆に、バリヤ・ハイトφbnが小であると注入ホ
ールjhは少ないが注入エレクトロンjeは多くなる。Conversely, the injection holes j h a barrier height phi bn is smaller Less often injected electrons j e increases.
従って、φbn≒1/2Egであることが最も良い結果をも
たらすことになり、このような条件を満足させる金属が
WSixであり、このWSixを用いることに依って暗電流はAl
などを用いた場合と比較して大幅に低減される。Therefore, the best result is obtained when φ bn ≒ 1 / 2E g , and a metal satisfying such a condition is
A WSi x, dark current depending on the use of this WSi x is Al
It is greatly reduced as compared with the case where the above is used.
本発明者が実験した結果にしたがって、MSMフォト・
ダイオードの電極としてWSixを用いたところ、暗電流を
少なくすることができた。尚、光半導体装置の構造とし
ては、第４図及び第５図に関して説明した従来技術に依
るものと何等変わりなく、唯、電極４及び５を構成する
材料が異なるだけである。また、実際の電極としては、
例えばWSix/Ti/Auの三層構造になっている。According to the results of experiments conducted by the present inventors, MSM photo
When using WSi x as an electrode of the diode, it was possible to reduce the dark current. The structure of the optical semiconductor device is not different from that according to the prior art described with reference to FIGS. 4 and 5, except that the materials constituting the electrodes 4 and 5 are different. Also, as an actual electrode,
For example, it has a three-layer structure of WSi x / Ti / Au.
第３図は電極にWSix（ｘ＝0.64）を用いた場合の暗電
流対電圧特性を表す線図である。FIG. 3 is a diagram showing dark current versus voltage characteristics when WSi x (x = 0.64) is used for the electrode.
図から判るように、バイアス電圧を20〔Ｖ〕程度にし
た場合であっても、暗電流は２×10-9〔Ａ〕程度であっ
て、極めて少ない。As can be seen from the figure, even when the bias voltage is set to about 20 [V], the dark current is about 2 × 10 -9 [A], which is extremely small.
ところで、WSixからなる電極は熱処理すると多結晶化
するが、その際、ｘ値を0.64にすると極めて安定であ
り、そして、 0.6＜ｘ＜0.7 に採ることが好ましい。若し、この範囲を外れると、WS
ixからなる電極が半導体層から剥離したり、ショットキ
・バリヤを生成することが不可能になる。By the way, the electrode made of WSi x is polycrystallized by heat treatment. At that time, when the x value is set to 0.64, it is extremely stable, and it is preferable to set 0.6 <x <0.7. If you fall outside this range, WS
consisting i x electrodes peeled off from the semiconductor layer, it is impossible to produce a Schottky barrier.
本発明に依る光半導体装置では、GaAsを材料とする能
動層にWSixを材料とする電極を形成したMSMフォト・ダ
イオードを有してなる構成を採っている。The optical semiconductor device according to the present invention employs a configuration having an MSM photodiode in which an electrode made of WSi x is formed on an active layer made of GaAs.
このようにWSixを電極としたMSMフォト・ダイオード
は、他の金属を電極とするものに比較して暗電流が著し
く低減されるので、S/Nが極めて良好な受信系を作成す
ることができ、また、構造的には従来のMSMフォト・ダ
イオードと変わりないので、他のデバイス、例えばMESF
ETなどと集積化することは容易である。This MSM photodiode in which the WSi x and the electrode as the dark current is significantly reduced compared to those of the other metals as an electrode, that S / N to create a very good reception system Yes, and because it is structurally the same as a conventional MSM photodiode, other devices such as MESF
It is easy to integrate with ET etc.
第１図は暗電流対バリヤ・ハイトの関係を示す線図、第
２図はMSMフォト・ダイオードのエネルギ・バンド・ダ
イヤグラム、第３図はMSMフォト・ダイオードの暗電流
対バイアス電圧の関係を示す線図、第４図はMSMフォト
・ダイオードの要部平面図、第５図は第４図に見られる
線Ａ−Ａ′で切断した状態のMSMフォト・ダイオードの
要部切断側面図をそれぞれ表している。 図に於いて、１は半絶縁性GaAs基板、２はGaAs能動層、
３はSiN膜、４及び５は電極をそれぞれ示している。FIG. 1 is a diagram showing the relationship between dark current and barrier height, FIG. 2 is an energy band diagram of an MSM photodiode, and FIG. 3 is a diagram showing the relationship between dark current and bias voltage of an MSM photodiode. FIG. 4 is a plan view of a main part of the MSM photodiode, and FIG. 5 is a cutaway side view of a main part of the MSM photodiode cut along a line AA 'shown in FIG. ing. In the figure, 1 is a semi-insulating GaAs substrate, 2 is a GaAs active layer,
Reference numeral 3 denotes an SiN film, and reference numerals 4 and 5 denote electrodes.
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 昭56−111273（ＪＰ，Ａ) Ａｐｐｌ．Ｐｈｙｓ，Ｌｅｔｔ．，43 ［６］，（1983），Ｐ．600−602 Ｓｏｌｉｄ Ｓｔｅｔｅ Ｅｌｅｃｔ ｒｏｎｉｃｓ，Ｖｏｌ．14，ＰＰ．1209 −1218 ──────────────────────────────────────────────────続 き Continuation of front page (56) References JP-A-56-111273 (JP, A) Appl. Phys, Lett. , 43 [6], (1983), p. 600-602 Solid State Electronics, Vol. 14, PP. 1209 -1218
Claims (1)
る電極を形成したMSMフォト・ダイオードを有してなる
こと を特徴とする光半導体装置。1. An optical semiconductor device comprising an MSM photodiode in which an electrode made of WSi x is formed on an active layer made of GaAs.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60111376A JP2592232B2 (en) | 1985-05-25 | 1985-05-25 | Optical semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60111376A JP2592232B2 (en) | 1985-05-25 | 1985-05-25 | Optical semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61270878A JPS61270878A (en) | 1986-12-01 |
| JP2592232B2 true JP2592232B2 (en) | 1997-03-19 |
Family
ID=14559616
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60111376A Expired - Fee Related JP2592232B2 (en) | 1985-05-25 | 1985-05-25 | Optical semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2592232B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2705757B2 (en) * | 1995-01-23 | 1998-01-28 | 工業技術院長 | Light receiving element |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56111273A (en) * | 1980-02-07 | 1981-09-02 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor photodetecting device |
-
1985
- 1985-05-25 JP JP60111376A patent/JP2592232B2/en not_active Expired - Fee Related
Non-Patent Citations (2)
| Title |
|---|
| Ａｐｐｌ．Ｐｈｙｓ，Ｌｅｔｔ．，４３［６］，（１９８３），Ｐ．６００−６０２ |
| Ｓｏｌｉｄ Ｓｔｅｔｅ Ｅｌｅｃｔｒｏｎｉｃｓ，Ｖｏｌ．１４，ＰＰ．１２０９−１２１８ |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61270878A (en) | 1986-12-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |