JPS59141279A - Photodiode consisting of schottky junction - Google Patents
Photodiode consisting of schottky junctionInfo
- Publication number
- JPS59141279A JPS59141279A JP58015845A JP1584583A JPS59141279A JP S59141279 A JPS59141279 A JP S59141279A JP 58015845 A JP58015845 A JP 58015845A JP 1584583 A JP1584583 A JP 1584583A JP S59141279 A JPS59141279 A JP S59141279A
- Authority
- JP
- Japan
- Prior art keywords
- schottky junction
- photodiode
- layer
- junction
- gaas layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 239000004065 semiconductor Substances 0.000 claims abstract description 8
- 150000001875 compounds Chemical class 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 13
- 239000012535 impurity Substances 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
【発明の詳細な説明】
（イ）産業上の利用分野
本発明は吸収係数の大きな短波長領域にて用いて効果の
大きなショットキ接合から成るフォトダイオードに関す
る。DETAILED DESCRIPTION OF THE INVENTION (a) Field of Industrial Application The present invention relates to a photodiode comprising a Schottky junction that is highly effective when used in a short wavelength region with a large absorption coefficient.
（ロ）従 来 技 術
フォトダイオードとして大きな光電流を得るには受光部
の面積を広くすれば良いのであるが、受光部面積を拡げ
ると接合容量が増加し、高速動作が困難となる。(b) Conventional technology In order to obtain a large photocurrent as a photodiode, it is sufficient to increase the area of the light-receiving part, but increasing the area of the light-receiving part increases the junction capacitance, making high-speed operation difficult.
くハ）発 明 の 目 的
本発明はこのような問題点に鑑みて為されたものであっ
て、接合容量を増す事なく受光面積を広くしたフォトダ
イオードを提供せんとするものである。c) Purpose of the Invention The present invention has been made in view of the above-mentioned problems, and it is an object of the present invention to provide a photodiode with a wide light-receiving area without increasing the junction capacitance.
（ニ）発 明 の 構 数
本発明は化合物半導体基板にメサ部を形成し、このメサ
部表面にショットキ電極を設け、そのショットキ接合か
らメサ部を介して化合物半導体基板にまで空乏層を拡げ
て受光面積を増大させたものである。(d) Structure of the invention The present invention forms a mesa portion on a compound semiconductor substrate, provides a Schottky electrode on the surface of the mesa portion, and extends a depletion layer from the Schottky junction to the compound semiconductor substrate via the mesa portion. The light-receiving area has been increased.
（ホ）実 施 例
第１図は本発明フォトダイオードの要部の断面図であっ
て、（１）は抵抗率−が１０６９−印以上の半絶縁性Ｇ
ａＡｓ結晶基板、（２）はこの基板（１）表面にエピタ
キシャル成長詐れた高純度Ｇ ａＡ ＱＡ ｓ層で、具
体的には、Ｇ ａｌ−ｘＡ ＱｘＡ ｓ（ｘ≧０．４）
の組成ヲ有シ、キＶ ｌ） ヤ濃度は約５×１０１５／
ｃｌＴ１３で、５〜２０μｍの厚みである。（３）はこ
のＧ ａＡ ＩＩＡ ｓ層（２）上にエピタキシャル成
長されたキャリア濃度が１×１０′３７ｃ′ｌＴ１３程
度の高純度ＧａＡｓ層で、２〜３μｍの厚みを有してお
り、メサ部構造を為している。（４）はこのメサ部を為
すＧａＡｓ層（３）表面に該ＧａＡｓ層（３）と接して
ショットキ接合〈５）を形成する金属、例えばアルミニ
ウムから成るアノード電極である。（６）は上記メ勺部
のＧａＡｓ層（３）の外周のＧａＡｓＪＦｔ（３）表面
にエピタキシャル成長された高濃度ｎ型層で、キャリヤ
濃度が１〜２５×１０＋６／ｃＴｎ３のＧ ａ Ａ ｓ
から成ッテおり、このｎ型層（６）上にオーミンクコン
タクトしたカソード電極（７）が形成きれている。(e) Example FIG. 1 is a cross-sectional view of the main part of the photodiode of the present invention, and (1) is a semi-insulating G with a resistivity of 1069 or more.
The aAs crystal substrate (2) is a high-purity GaA QA s layer epitaxially grown on the surface of the substrate (1), specifically, Gal-xA QxA s (x≧0.4).
The composition is approximately 5×1015/
It is clT13 and has a thickness of 5 to 20 μm. (3) is a high purity GaAs layer with a carrier concentration of about 1×10′37c′lT13 epitaxially grown on this GaA IIAs layer (2), and has a thickness of 2 to 3 μm, and has a mesa structure. are doing. (4) is an anode electrode made of metal, for example aluminum, which forms a Schottky junction (5) in contact with the GaAs layer (3) forming the mesa portion. (6) is a high-concentration n-type layer epitaxially grown on the surface of GaAsJFt (3) on the outer periphery of the GaAs layer (3) in the mezzanine part, and is a GaAs layer with a carrier concentration of 1 to 25×10+6/cTn3.
A cathode electrode (7) in ohmink contact has been formed on this n-type layer (6).
斯る構成のフォトダイオードに於て、アノード電極〈４
）に負、カン−［゛電極（７）に正の電圧を印加してシ
ョットキ接合（５）１こ逆バイアスを印加すると、Ｇ
ａＡ ＱＡ ｓ層（２〉やＧａＡｓ層（３）は何れも高
純度、即ち低イニ純物濃度であるので、ショットキ接合
（５）からメサ部のＧａＡｓＮ（３）全域は勿論の事、
Ｇ ａＡ ＩＩＡ ｓＪ！ｔ （２）にまで空乏層（８
）が拡がる。従ってこの空乏層（８）が拡がった箇所が
フォトダイオードとしての受光部を構成する事となる。In the photodiode with such a configuration, the anode electrode <4
) is negative, and when a positive voltage is applied to the electrode (7) and a reverse bias is applied to the Schottky junction (5), G
Since both the aA QA s layer (2) and the GaAs layer (3) have high purity, that is, a low ini purity concentration, not only the entire area from the Schottky junction (5) to the GaAsN (3) in the mesa part,
G aA IIA sJ! The depletion layer (8
) expands. Therefore, the portion where this depletion layer (8) expands constitutes a light receiving portion as a photodiode.
一方、接合はメサ部のＧａＡｓ層（３）とアノードｔｍ
（４）との界面のみであるので、その接合容量は受光部
の面積が拡がったにも拘らず、増加する事はなく、大き
な光電流を持って高速動作するフォトダイオードを得る
事が出来る。On the other hand, the junction is between the GaAs layer (3) in the mesa part and the anode tm.
(4), the junction capacitance does not increase even though the area of the light-receiving part has expanded, and it is possible to obtain a photodiode that has a large photocurrent and operates at high speed.
第２図は本発明フォトダイオードをスイッチングＦＥＴ
と集積回路化した場合の断面斜視図を示しており、（１
０）（１０）は第１図に示したフォトダイオード、（１
１）はスイッチングＦＥＴで、ＧａＡｓ層（３）表面に
形成した高濃度ｎ型層（６〉を動作層としてこの動作層
（６）にショットキ接合を形成するアルミニウムから成
るゲート電極（１２）と、上記フォトダイオード（１０
）（１０）のカソード電極（７）を延長したソース電極
（１３）と、該ソース電極（１３）とゲート電極（１２
）を挾んで対向したドレイン電極〈１４）と、を有して
いる。第３図はこのように集積回路化されたフォトトラ
ンジスタ回路の等価回路図を示しており、フォトダイオ
ード（１０）とスイッチン３−
グＦ Ｅ Ｔ （１１）とが直結きれている。Figure 2 shows a switching FET using the photodiode of the present invention.
It shows a cross-sectional perspective view of the integrated circuit.
0) (10) is the photodiode shown in Figure 1, (1
1) is a switching FET, with a gate electrode (12) made of aluminum forming a Schottky junction in the active layer (6) with a highly doped n-type layer (6>) formed on the surface of the GaAs layer (3) as the active layer; The above photodiode (10
) (10), a source electrode (13) that is an extension of the cathode electrode (7), and a source electrode (13) and a gate electrode (12).
) and opposing drain electrodes <14). FIG. 3 shows an equivalent circuit diagram of the phototransistor circuit integrated in this way, in which the photodiode (10) and the switching FET (11) are directly connected.
（へ） 発 明 の 効 果
本発明は以−Ｅの説明から明らかな如く、低濃度半導体
基板上に低濃度力メサ部を形成し、このメサ部表面にシ
ョット・キ接合を設けているので、ショットキ接合に逆
バイアスを印加する事に依って低濃度半導体基板にまで
空乏層を拡げて広い面積の受光部を形成している。従っ
て接合面積は狭いにも拘らず、広面積の受光部を有する
事となるので、大きな光電流を少い接合容量で得る事が
出来、大きな光電流を持って高速動作するフォトダイオ
ードが得られる。(F) Effects of the Invention As is clear from the explanation below, the present invention forms a low concentration mesa portion on a low concentration semiconductor substrate and provides a Schottky junction on the surface of this mesa portion. By applying a reverse bias to the Schottky junction, the depletion layer is expanded to the low concentration semiconductor substrate, forming a light receiving section with a wide area. Therefore, even though the junction area is small, it has a wide light receiving area, so a large photocurrent can be obtained with a small junction capacitance, and a photodiode that has a large photocurrent and operates at high speed can be obtained. .
第１図は本発明フォトダイオードの断面図、第２１１Ａ
は本発明フォトダイオードを集積回路化した場合の断面
斜視図、第３図は第２図の等価回路図であって、（２）
はＧ ａＡ Ｉ）Ａ ８層、（３）はＧａＡｓ層、〈４
）はアノード電極、（５）はショットキ接合、（６）は
ｎ型層（動作層）、（７）はカソード電極、（１）は空
乏層、（ｌＯ）はフォトダイオード、（１１）はスイッ
チ４−
ングＦＥＴ、を夫々示している。
第３図 −ＶＢ ｎ。FIG. 1 is a cross-sectional view of the photodiode of the present invention, No. 211A.
is a cross-sectional perspective view of the photodiode of the present invention integrated into an integrated circuit, and FIG. 3 is an equivalent circuit diagram of FIG. 2, (2)
is GaA I)A 8 layer, (3) is GaAs layer, <4
) is the anode electrode, (5) is the Schottky junction, (6) is the n-type layer (active layer), (7) is the cathode electrode, (1) is the depletion layer, (IO) is the photodiode, and (11) is the switch. 4-ng FETs are shown, respectively. Figure 3-VB n.
Claims (1)
メサ部を形成し、とのメサ部表面に該メサ部と接してシ
ョットキ接合を形成する金属電極を設けて成り、該金属
電極に逆バイアスを印加する事に依ってこの電極をメサ
部表面とのショットキ接合からメサ部を介して基板表面
にまで空乏層を拡げて広面積の受光部としたショットキ
接合から成るフォトダイオード。1) A mesa portion made of a low concentration semiconductor is formed on a low concentration compound semiconductor substrate, a metal electrode is provided on the surface of the mesa portion to form a Schottky junction in contact with the mesa portion, and a reverse bias is applied to the metal electrode. A photodiode consisting of a Schottky junction where the depletion layer is expanded from the Schottky junction with the surface of the mesa part to the substrate surface via the mesa part by applying .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58015845A JPS59141279A (en) | 1983-02-01 | 1983-02-01 | Photodiode consisting of schottky junction |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58015845A JPS59141279A (en) | 1983-02-01 | 1983-02-01 | Photodiode consisting of schottky junction |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS59141279A true JPS59141279A (en) | 1984-08-13 |
Family
ID=11900155
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58015845A Pending JPS59141279A (en) | 1983-02-01 | 1983-02-01 | Photodiode consisting of schottky junction |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59141279A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104242056A (en) * | 2014-10-10 | 2014-12-24 | 中国电子科技集团公司第四十四研究所 | Ridge waveguide chip structure capable of improving electrical isolation capability and production method of ridge waveguide chip structure |
-
1983
- 1983-02-01 JP JP58015845A patent/JPS59141279A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104242056A (en) * | 2014-10-10 | 2014-12-24 | 中国电子科技集团公司第四十四研究所 | Ridge waveguide chip structure capable of improving electrical isolation capability and production method of ridge waveguide chip structure |
| CN104242056B (en) * | 2014-10-10 | 2017-02-15 | 中国电子科技集团公司第四十四研究所 | Ridge waveguide chip structure capable of improving electrical isolation capability and production method of ridge waveguide chip structure |
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