JPS56125855A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS56125855A
JPS56125855A JP2876280A JP2876280A JPS56125855A JP S56125855 A JPS56125855 A JP S56125855A JP 2876280 A JP2876280 A JP 2876280A JP 2876280 A JP2876280 A JP 2876280A JP S56125855 A JPS56125855 A JP S56125855A
Authority
JP
Japan
Prior art keywords
film
organosiloxane resin
psg
etching method
photoresist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2876280A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6255703B2 (enrdf_load_stackoverflow
Inventor
Kenji Sugishima
Hiroshi Goto
Hiroshi Tokunaga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP2876280A priority Critical patent/JPS56125855A/ja
Publication of JPS56125855A publication Critical patent/JPS56125855A/ja
Publication of JPS6255703B2 publication Critical patent/JPS6255703B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
JP2876280A 1980-03-07 1980-03-07 Manufacture of semiconductor device Granted JPS56125855A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2876280A JPS56125855A (en) 1980-03-07 1980-03-07 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2876280A JPS56125855A (en) 1980-03-07 1980-03-07 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS56125855A true JPS56125855A (en) 1981-10-02
JPS6255703B2 JPS6255703B2 (enrdf_load_stackoverflow) 1987-11-20

Family

ID=12257412

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2876280A Granted JPS56125855A (en) 1980-03-07 1980-03-07 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS56125855A (enrdf_load_stackoverflow)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5945946A (ja) * 1982-09-06 1984-03-15 Toyota Central Res & Dev Lab Inc 中空糸状多孔質ガラスの製造法
JPS61228633A (ja) * 1985-04-02 1986-10-11 Hitachi Ltd 薄膜形成方法
US5087553A (en) * 1989-02-23 1992-02-11 Mitsubishi Denki Kabushiki Kaisha Method for transferring patterns on silicone ladder type resin and etching solution used in such method
US5179185A (en) * 1990-01-10 1993-01-12 Mitsubishi Denki Kabushiki Kaisha High purity hydroxy-terminated phenyl ladder polysiloxane and method for producing the same
US5399648A (en) * 1992-12-21 1995-03-21 Mitsubishi Denki Kabushiki Kaisha High-purity silicone ladder polymer and process producing the same

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5945946A (ja) * 1982-09-06 1984-03-15 Toyota Central Res & Dev Lab Inc 中空糸状多孔質ガラスの製造法
JPS61228633A (ja) * 1985-04-02 1986-10-11 Hitachi Ltd 薄膜形成方法
US5087553A (en) * 1989-02-23 1992-02-11 Mitsubishi Denki Kabushiki Kaisha Method for transferring patterns on silicone ladder type resin and etching solution used in such method
US5179185A (en) * 1990-01-10 1993-01-12 Mitsubishi Denki Kabushiki Kaisha High purity hydroxy-terminated phenyl ladder polysiloxane and method for producing the same
US5399648A (en) * 1992-12-21 1995-03-21 Mitsubishi Denki Kabushiki Kaisha High-purity silicone ladder polymer and process producing the same

Also Published As

Publication number Publication date
JPS6255703B2 (enrdf_load_stackoverflow) 1987-11-20

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