JPS6441244A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS6441244A
JPS6441244A JP19761187A JP19761187A JPS6441244A JP S6441244 A JPS6441244 A JP S6441244A JP 19761187 A JP19761187 A JP 19761187A JP 19761187 A JP19761187 A JP 19761187A JP S6441244 A JPS6441244 A JP S6441244A
Authority
JP
Japan
Prior art keywords
connecting hole
wiring
layer part
whose
wirings
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP19761187A
Other languages
Japanese (ja)
Inventor
Yasushi Shiraishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP19761187A priority Critical patent/JPS6441244A/en
Publication of JPS6441244A publication Critical patent/JPS6441244A/en
Pending legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To avoid the step-out of a wiring by obtaining a connecting hole whose sectional form is smooth, and improve the reliability of a device, by performing a weak anisotropic etching to form the connecting hole to connect the part between wirings. CONSTITUTION:On a first Al wiring 10, a plasma oxide film is grown as an interlayer insulating film 11. In order to make a connecting hole to connect the part between wirings, resist 12 is applied, and alignment and exposure are performed. A connecting hole is opened by a weak anisotropic etching 13. Since the upper layer part of the insulating film 11 is porous, whose etching rate is large, and its lower layer part is dense, whose etching rate is small as compared with the upper layer part, the end surface shape of the opened connecting hole becomes smooth. Thereby, the step-cut of a wiring 14 can be avoided, and the reliability of a device can thus be improved.
JP19761187A 1987-08-07 1987-08-07 Manufacture of semiconductor device Pending JPS6441244A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19761187A JPS6441244A (en) 1987-08-07 1987-08-07 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19761187A JPS6441244A (en) 1987-08-07 1987-08-07 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS6441244A true JPS6441244A (en) 1989-02-13

Family

ID=16377350

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19761187A Pending JPS6441244A (en) 1987-08-07 1987-08-07 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6441244A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01186627A (en) * 1988-01-14 1989-07-26 Rohm Co Ltd Preparation of passivation film of semiconductor device
JPH03105923A (en) * 1989-09-19 1991-05-02 Nec Corp Multilayer interconnection
JPH09223737A (en) * 1996-02-16 1997-08-26 Nec Corp Manufacture of semiconductor device
US5752986A (en) * 1993-11-18 1998-05-19 Nec Corporation Method of manufacturing a solid electrolytic capacitor
WO2011004717A1 (en) * 2009-07-06 2011-01-13 シャープ株式会社 Contact-hole forming method
JP2012038965A (en) * 2010-08-09 2012-02-23 Lapis Semiconductor Co Ltd Semiconductor device and manufacturing method of the same

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01186627A (en) * 1988-01-14 1989-07-26 Rohm Co Ltd Preparation of passivation film of semiconductor device
JPH03105923A (en) * 1989-09-19 1991-05-02 Nec Corp Multilayer interconnection
US5752986A (en) * 1993-11-18 1998-05-19 Nec Corporation Method of manufacturing a solid electrolytic capacitor
JPH09223737A (en) * 1996-02-16 1997-08-26 Nec Corp Manufacture of semiconductor device
WO2011004717A1 (en) * 2009-07-06 2011-01-13 シャープ株式会社 Contact-hole forming method
JP2012038965A (en) * 2010-08-09 2012-02-23 Lapis Semiconductor Co Ltd Semiconductor device and manufacturing method of the same

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