JPS6466953A - Semiconductor device - Google Patents

Abstract

PURPOSE:To smooth the shape of an opening section, and to improve the coatability of an upper layer wiring by forming inter-layer insulating films with opening sections for a contact in multilayer structure in which insulating films are laminated in a manner that the etching rate of an uppermost-layer insulating film is most increased and etching rates toward an upper layer are decreased in succession. CONSTITUTION:An silicon oxide film 2, a polycrystalline silicon layer 3, and an aluminum layer 4 are deposited onto an silicon substrate 1 in succession, and a lower layer wiring is formed through selective etching. Silicon oxide PSG films 5, 6, 7, the content of phosphorus of which is reduced successively to 12 or 4mol%, are deposited onto the surface of the lower layer wiring and inter-layer insulating films are shaped, and a deep cone-shaped opening section 9 is formed through isotropic etching, using a photo-resist film 8 as a mask. An aluminum layer is deposited onto the surface including the opening section 9, and brought into contact with the lower layer wiring, and an aluminum wiring 10 extending on the inter-layer insulating films is formed.