JPS6415935A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6415935A JPS6415935A JP17218587A JP17218587A JPS6415935A JP S6415935 A JPS6415935 A JP S6415935A JP 17218587 A JP17218587 A JP 17218587A JP 17218587 A JP17218587 A JP 17218587A JP S6415935 A JPS6415935 A JP S6415935A
- Authority
- JP
- Japan
- Prior art keywords
- opening window
- nitride film
- silicon nitride
- aluminum wiring
- resist pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To for an opening window having a sectional shape forming an excel lent taper angle by etching the opening window and the whole surface of an insulating film through isotropic or anisotropic etching and removing an over hang section in the opening window. CONSTITUTION:A silicon oxide film 2 and an aluminum wiring 3 are formed onto a semiconductor substrate 1, an silicon nitride film 4 as an inter-layer insulating film is grown, and a resist pattern 5 having an opening window 6a formed to a desired shape is formed to the upper layer of the nitride film 4. A hole 6b, which has a pattern corresponding to the pattern of the resist pattern 5 and does not reach the aluminum wiring 3, is shaped to the silicon nitride film 4. The silicon nitride film 4 is etched, and a hole 6c reaching the aluminum wiring 3 is formed. The opening window 6c has a sectional shape in which an upper section takes an overhang shape and a lower section steeply rises vertically. The resist pattern 5 is removed, anisotropic etching treatment is executed to the opening window 6c and the whole silicon nitride film 4, and the upper overhang section in the opening window 6c and the surface sec tion of the silicon nitride film 4 are etched away.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17218587A JPS6415935A (en) | 1987-07-10 | 1987-07-10 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17218587A JPS6415935A (en) | 1987-07-10 | 1987-07-10 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6415935A true JPS6415935A (en) | 1989-01-19 |
Family
ID=15937153
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17218587A Pending JPS6415935A (en) | 1987-07-10 | 1987-07-10 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6415935A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11131919B2 (en) * | 2018-06-22 | 2021-09-28 | International Business Machines Corporation | Extreme ultraviolet (EUV) mask stack processing |
-
1987
- 1987-07-10 JP JP17218587A patent/JPS6415935A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11131919B2 (en) * | 2018-06-22 | 2021-09-28 | International Business Machines Corporation | Extreme ultraviolet (EUV) mask stack processing |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP0288052A3 (en) | Semiconductor device comprising a substrate, and production method thereof | |
JPS5690525A (en) | Manufacture of semiconductor device | |
KR900000992A (en) | Semiconductor device and manufacturing method | |
JPS59208859A (en) | Semiconductor wafer and method of producing same | |
CA2043172A1 (en) | Method and structure for interconnecting different polysilicon zones on semi-conductor substrates for integrated circuits | |
JPS61171132A (en) | Formation of through hole | |
KR900019127A (en) | Semiconductor device and manufacturing method | |
JPS6415935A (en) | Manufacture of semiconductor device | |
KR890011035A (en) | Integrated circuit manufacturing method and electrical connection forming method | |
JPS6466953A (en) | Semiconductor device | |
JPS6439749A (en) | Semiconductor device and manufacture thereof | |
JPS5444474A (en) | Contact forming method of semiconductor device | |
JPS56125856A (en) | Manufacture of semiconductor device | |
JPS6480044A (en) | Semiconductor device | |
JPS6430228A (en) | Manufacture of semiconductor device | |
JPS6484722A (en) | Manufacture of semiconductor device | |
JPS57107053A (en) | Manufacture of semiconductor device | |
JPS6421940A (en) | Manufacture of semiconductor device | |
JPS57100749A (en) | Manufacture of semiconductor device | |
JPS6489339A (en) | Manufacture of semiconductor device | |
JPS6420664A (en) | Manufacture of semiconductor device | |
JPS6457733A (en) | Semiconductor device | |
KR970003913A (en) | Bit line manufacturing method | |
JPS56155552A (en) | Manufacture of semiconductor device | |
JPS5373086A (en) | Formation of multilayer wiring structure |