JPS6415935A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS6415935A
JPS6415935A JP17218587A JP17218587A JPS6415935A JP S6415935 A JPS6415935 A JP S6415935A JP 17218587 A JP17218587 A JP 17218587A JP 17218587 A JP17218587 A JP 17218587A JP S6415935 A JPS6415935 A JP S6415935A
Authority
JP
Japan
Prior art keywords
opening window
nitride film
silicon nitride
aluminum wiring
resist pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17218587A
Other languages
Japanese (ja)
Inventor
Takaaki Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP17218587A priority Critical patent/JPS6415935A/en
Publication of JPS6415935A publication Critical patent/JPS6415935A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To for an opening window having a sectional shape forming an excel lent taper angle by etching the opening window and the whole surface of an insulating film through isotropic or anisotropic etching and removing an over hang section in the opening window. CONSTITUTION:A silicon oxide film 2 and an aluminum wiring 3 are formed onto a semiconductor substrate 1, an silicon nitride film 4 as an inter-layer insulating film is grown, and a resist pattern 5 having an opening window 6a formed to a desired shape is formed to the upper layer of the nitride film 4. A hole 6b, which has a pattern corresponding to the pattern of the resist pattern 5 and does not reach the aluminum wiring 3, is shaped to the silicon nitride film 4. The silicon nitride film 4 is etched, and a hole 6c reaching the aluminum wiring 3 is formed. The opening window 6c has a sectional shape in which an upper section takes an overhang shape and a lower section steeply rises vertically. The resist pattern 5 is removed, anisotropic etching treatment is executed to the opening window 6c and the whole silicon nitride film 4, and the upper overhang section in the opening window 6c and the surface sec tion of the silicon nitride film 4 are etched away.
JP17218587A 1987-07-10 1987-07-10 Manufacture of semiconductor device Pending JPS6415935A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17218587A JPS6415935A (en) 1987-07-10 1987-07-10 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17218587A JPS6415935A (en) 1987-07-10 1987-07-10 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS6415935A true JPS6415935A (en) 1989-01-19

Family

ID=15937153

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17218587A Pending JPS6415935A (en) 1987-07-10 1987-07-10 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6415935A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11131919B2 (en) * 2018-06-22 2021-09-28 International Business Machines Corporation Extreme ultraviolet (EUV) mask stack processing

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11131919B2 (en) * 2018-06-22 2021-09-28 International Business Machines Corporation Extreme ultraviolet (EUV) mask stack processing

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