JPS56124231A - Method for diffused junction - Google Patents

Abstract

PURPOSE:To easily obtain a diffused junction by a method by a method wherein, on the surface of one of metals, the deposited layer of the other metal is formed in an electrolyte and the heterologeous metals are pressure-welded together while said deposited layer is in an activated condition. CONSTITUTION:In the electrolyte 3 of sulfamic acid Ni, the deposited layer 4 of Ni is formed on a Cu stick using an Ni stick 1 as a positive electrode and a Cu stick 2 as a negative electrode using DC4A/cm<2> at the solution temperature of 60 deg.C and pH4. Immediately after the current has been shut off, the sticks 1 and 2 are pressure welded through the intermediary of the deposited layer. When the pressurizing force is increased to above 10kg/cm<2>, the sticks are tightly fixed and are saturated at 17kg/cm<2> or more, thereby enabling to obtain the adhesive strength of 10kg/cm<2>. In the process of the Ni deposition, when an electrolytic current is multipled by a pulse current, the concentration of the electrolyte in the front of the Ni deposited layer is homogenized, a clean deposited layer is obtained and also an excellent junction can be obtained. Besides, when the above is heated up at or around the temperature of crystallization after performance of the pressure welding, the adhesive strength is increased. For example, when the above is processed at the temperature of 500 deg.C, the adhesive strength of 23kg/cm<2> can be obtained.