JPS57128028A - Forming method for ohmic electrode to surface of p type 4-6 group compound semiconductor - Google Patents

Forming method for ohmic electrode to surface of p type 4-6 group compound semiconductor

Info

Publication number
JPS57128028A
JPS57128028A JP1315081A JP1315081A JPS57128028A JP S57128028 A JPS57128028 A JP S57128028A JP 1315081 A JP1315081 A JP 1315081A JP 1315081 A JP1315081 A JP 1315081A JP S57128028 A JPS57128028 A JP S57128028A
Authority
JP
Japan
Prior art keywords
gold
semiconductor
type
group compound
compound semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1315081A
Other languages
Japanese (ja)
Inventor
Hisao Saito
Yoshiharu Horikoshi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP1315081A priority Critical patent/JPS57128028A/en
Publication of JPS57128028A publication Critical patent/JPS57128028A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To form a good ohmic electrode on the surface of a P type IV-VI group compound semiconductor by energizing a gold tantalum plating solution with the semiconductor and a gold electrode, thereby depositing gold-tantalum alloy on the surface of the semiconductor. CONSTITUTION:A gold thallium plating solution added with Tl(SO4)2 to a gold plating solution containing mainly K(Au(CJ)2) is energized with a P type IV-VI group compound semiconductor and gold electrode of PBTe sereis, PbSnTe series and PbTeSe series as a cathode and an anode in the state arranged with the semiconductor and the gold, and the surface is thus slightly etched, thereby obtaining the surface formed with no oxide. With the cathode and the anode connected reversely, gold-tantalum alloy is deposited on the surface, and the P type IV-VI group compounds are thereafter removed from the solution. In this manner, good ohmic electrode can be formed on the surface of the semiconductor with the extremely simple steps.
JP1315081A 1981-01-30 1981-01-30 Forming method for ohmic electrode to surface of p type 4-6 group compound semiconductor Pending JPS57128028A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1315081A JPS57128028A (en) 1981-01-30 1981-01-30 Forming method for ohmic electrode to surface of p type 4-6 group compound semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1315081A JPS57128028A (en) 1981-01-30 1981-01-30 Forming method for ohmic electrode to surface of p type 4-6 group compound semiconductor

Publications (1)

Publication Number Publication Date
JPS57128028A true JPS57128028A (en) 1982-08-09

Family

ID=11825130

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1315081A Pending JPS57128028A (en) 1981-01-30 1981-01-30 Forming method for ohmic electrode to surface of p type 4-6 group compound semiconductor

Country Status (1)

Country Link
JP (1) JPS57128028A (en)

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