JPS56122122A - Manufacture of amorphous semiconductor - Google Patents
Manufacture of amorphous semiconductorInfo
- Publication number
- JPS56122122A JPS56122122A JP2627380A JP2627380A JPS56122122A JP S56122122 A JPS56122122 A JP S56122122A JP 2627380 A JP2627380 A JP 2627380A JP 2627380 A JP2627380 A JP 2627380A JP S56122122 A JPS56122122 A JP S56122122A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- electrode
- amorphous semiconductor
- glow discharge
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/517—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using a combination of discharges covered by two or more of groups C23C16/503 - C23C16/515
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Photovoltaic Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2627380A JPS56122122A (en) | 1980-03-03 | 1980-03-03 | Manufacture of amorphous semiconductor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2627380A JPS56122122A (en) | 1980-03-03 | 1980-03-03 | Manufacture of amorphous semiconductor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS56122122A true JPS56122122A (en) | 1981-09-25 |
Family
ID=12188669
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2627380A Pending JPS56122122A (en) | 1980-03-03 | 1980-03-03 | Manufacture of amorphous semiconductor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56122122A (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58168281A (ja) * | 1982-03-30 | 1983-10-04 | Agency Of Ind Science & Technol | ホウ素を含有したシリコン薄膜 |
JPS60149119A (ja) * | 1984-01-13 | 1985-08-06 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
JPS60157217A (ja) * | 1983-07-28 | 1985-08-17 | Fuji Electric Corp Res & Dev Ltd | プラズマcvd装置 |
-
1980
- 1980-03-03 JP JP2627380A patent/JPS56122122A/ja active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58168281A (ja) * | 1982-03-30 | 1983-10-04 | Agency Of Ind Science & Technol | ホウ素を含有したシリコン薄膜 |
JPH0370389B2 (ja) * | 1982-03-30 | 1991-11-07 | Kogyo Gijutsuin | |
JPS60157217A (ja) * | 1983-07-28 | 1985-08-17 | Fuji Electric Corp Res & Dev Ltd | プラズマcvd装置 |
JPS60149119A (ja) * | 1984-01-13 | 1985-08-06 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
JPH0544180B2 (ja) * | 1984-01-13 | 1993-07-05 | Matsushita Electric Ind Co Ltd |
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