JPS56122122A - Manufacture of amorphous semiconductor - Google Patents

Manufacture of amorphous semiconductor

Info

Publication number
JPS56122122A
JPS56122122A JP2627380A JP2627380A JPS56122122A JP S56122122 A JPS56122122 A JP S56122122A JP 2627380 A JP2627380 A JP 2627380A JP 2627380 A JP2627380 A JP 2627380A JP S56122122 A JPS56122122 A JP S56122122A
Authority
JP
Japan
Prior art keywords
substrate
electrode
amorphous semiconductor
glow discharge
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2627380A
Other languages
English (en)
Inventor
Akio Azuma
Kazuhiro Kawajiri
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Holdings Corp
Original Assignee
Fuji Photo Film Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Photo Film Co Ltd filed Critical Fuji Photo Film Co Ltd
Priority to JP2627380A priority Critical patent/JPS56122122A/ja
Publication of JPS56122122A publication Critical patent/JPS56122122A/ja
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/517Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using a combination of discharges covered by two or more of groups C23C16/503 - C23C16/515

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
JP2627380A 1980-03-03 1980-03-03 Manufacture of amorphous semiconductor Pending JPS56122122A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2627380A JPS56122122A (en) 1980-03-03 1980-03-03 Manufacture of amorphous semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2627380A JPS56122122A (en) 1980-03-03 1980-03-03 Manufacture of amorphous semiconductor

Publications (1)

Publication Number Publication Date
JPS56122122A true JPS56122122A (en) 1981-09-25

Family

ID=12188669

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2627380A Pending JPS56122122A (en) 1980-03-03 1980-03-03 Manufacture of amorphous semiconductor

Country Status (1)

Country Link
JP (1) JPS56122122A (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58168281A (ja) * 1982-03-30 1983-10-04 Agency Of Ind Science & Technol ホウ素を含有したシリコン薄膜
JPS60149119A (ja) * 1984-01-13 1985-08-06 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JPS60157217A (ja) * 1983-07-28 1985-08-17 Fuji Electric Corp Res & Dev Ltd プラズマcvd装置

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58168281A (ja) * 1982-03-30 1983-10-04 Agency Of Ind Science & Technol ホウ素を含有したシリコン薄膜
JPH0370389B2 (ja) * 1982-03-30 1991-11-07 Kogyo Gijutsuin
JPS60157217A (ja) * 1983-07-28 1985-08-17 Fuji Electric Corp Res & Dev Ltd プラズマcvd装置
JPS60149119A (ja) * 1984-01-13 1985-08-06 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JPH0544180B2 (ja) * 1984-01-13 1993-07-05 Matsushita Electric Ind Co Ltd

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