JPS56112759A - Formation of gate electrode - Google Patents

Formation of gate electrode

Info

Publication number
JPS56112759A
JPS56112759A JP1453080A JP1453080A JPS56112759A JP S56112759 A JPS56112759 A JP S56112759A JP 1453080 A JP1453080 A JP 1453080A JP 1453080 A JP1453080 A JP 1453080A JP S56112759 A JPS56112759 A JP S56112759A
Authority
JP
Japan
Prior art keywords
gate
source
gate electrode
electrode side
evaporated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1453080A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6252957B2 (de
Inventor
Yoichi Aono
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP1453080A priority Critical patent/JPS56112759A/ja
Publication of JPS56112759A publication Critical patent/JPS56112759A/ja
Publication of JPS6252957B2 publication Critical patent/JPS6252957B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
    • H01L29/8128—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate with recessed gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP1453080A 1980-02-08 1980-02-08 Formation of gate electrode Granted JPS56112759A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1453080A JPS56112759A (en) 1980-02-08 1980-02-08 Formation of gate electrode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1453080A JPS56112759A (en) 1980-02-08 1980-02-08 Formation of gate electrode

Publications (2)

Publication Number Publication Date
JPS56112759A true JPS56112759A (en) 1981-09-05
JPS6252957B2 JPS6252957B2 (de) 1987-11-07

Family

ID=11863689

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1453080A Granted JPS56112759A (en) 1980-02-08 1980-02-08 Formation of gate electrode

Country Status (1)

Country Link
JP (1) JPS56112759A (de)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59147466A (ja) * 1983-02-10 1984-08-23 Sony Corp シヨツトキ・バリア・ゲ−ト型ｆｅｔ
FR2543365A1 (fr) * 1983-03-26 1984-09-28 Mitsubishi Electric Corp Transistor a effet de champ
JPS59224175A (ja) * 1983-06-03 1984-12-17 Nec Corp 電界効果トランジスタ
EP0614230A2 (de) * 1993-03-05 1994-09-07 Mitsubishi Denki Kabushiki Kaisha Halbleiteranordnung mit versenktem Gate und Verfahren zur Herstellung

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59147466A (ja) * 1983-02-10 1984-08-23 Sony Corp シヨツトキ・バリア・ゲ−ト型ｆｅｔ
FR2543365A1 (fr) * 1983-03-26 1984-09-28 Mitsubishi Electric Corp Transistor a effet de champ
JPS59224175A (ja) * 1983-06-03 1984-12-17 Nec Corp 電界効果トランジスタ
EP0614230A2 (de) * 1993-03-05 1994-09-07 Mitsubishi Denki Kabushiki Kaisha Halbleiteranordnung mit versenktem Gate und Verfahren zur Herstellung
EP0614230A3 (de) * 1993-03-05 1995-11-02 Mitsubishi Electric Corp Halbleiteranordnung mit versenktem Gate und Verfahren zur Herstellung.

Also Published As

Publication number Publication date
JPS6252957B2 (de) 1987-11-07

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