JPS56112734A - Formation of infinitesimal pattern - Google Patents

Formation of infinitesimal pattern

Info

Publication number
JPS56112734A
JPS56112734A JP1487380A JP1487380A JPS56112734A JP S56112734 A JPS56112734 A JP S56112734A JP 1487380 A JP1487380 A JP 1487380A JP 1487380 A JP1487380 A JP 1487380A JP S56112734 A JPS56112734 A JP S56112734A
Authority
JP
Japan
Prior art keywords
substrate
photoresist
film
infinitesimal
vertical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1487380A
Other languages
Japanese (ja)
Inventor
Seiichi Iwamatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP1487380A priority Critical patent/JPS56112734A/en
Publication of JPS56112734A publication Critical patent/JPS56112734A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment

Abstract

PURPOSE:To simply obtain the infinitesimal pattern by forming a photoresist film having side surfaces vertical to a substrate at a predetermined position on the surface of the substrate, covering a conductor film on the entire surface, retaining only the conductor film vertical to the substrate by a vertical etching process and then removing the photoresist. CONSTITUTION:The photoresist film 2 having side surfaces vertical to the substrate is formed at a predetermined position on the surface of the substrate 1. Subsequently, the conductor film such as, for example, an aluminum film 4 is covered on the entire surface by an oblique evaporation. Then, an ion etching process is conducted vertically to the substrate 1 and the conductor films on the surface of the photoresist and the surface of the substrate are removed. Then, the conductor film 4' on the side wall of the photoresist is retained without lateral etching. Thereafter, the photoresist film 2 is removed. Thus, the infinitesimal wire pattern can be readily formed. This can be utilized for the aluminum wire, gate metal wire or X-ray mask formed on the Si substrate.
JP1487380A 1980-02-12 1980-02-12 Formation of infinitesimal pattern Pending JPS56112734A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1487380A JPS56112734A (en) 1980-02-12 1980-02-12 Formation of infinitesimal pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1487380A JPS56112734A (en) 1980-02-12 1980-02-12 Formation of infinitesimal pattern

Publications (1)

Publication Number Publication Date
JPS56112734A true JPS56112734A (en) 1981-09-05

Family

ID=11873127

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1487380A Pending JPS56112734A (en) 1980-02-12 1980-02-12 Formation of infinitesimal pattern

Country Status (1)

Country Link
JP (1) JPS56112734A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5748237A (en) * 1980-09-05 1982-03-19 Nec Corp Manufacture of 2n doubling pattern
JPS5852849A (en) * 1981-09-24 1983-03-29 Nec Corp Manufacture for wiring for electronic parts
JPS58217499A (en) * 1982-06-10 1983-12-17 Toshiba Corp Fine working method of thin film
JPS59132627A (en) * 1983-01-20 1984-07-30 Matsushita Electronics Corp Pattern formation
JPS61131531A (en) * 1984-11-30 1986-06-19 Nec Kansai Ltd Formation of ultrafine wire
JPH01110727A (en) * 1987-10-23 1989-04-27 Nec Corp Manufacture of semiconductor device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5748237A (en) * 1980-09-05 1982-03-19 Nec Corp Manufacture of 2n doubling pattern
JPS5852849A (en) * 1981-09-24 1983-03-29 Nec Corp Manufacture for wiring for electronic parts
JPS6341221B2 (en) * 1981-09-24 1988-08-16 Nippon Electric Co
JPS58217499A (en) * 1982-06-10 1983-12-17 Toshiba Corp Fine working method of thin film
JPS59132627A (en) * 1983-01-20 1984-07-30 Matsushita Electronics Corp Pattern formation
JPS61131531A (en) * 1984-11-30 1986-06-19 Nec Kansai Ltd Formation of ultrafine wire
JPH01110727A (en) * 1987-10-23 1989-04-27 Nec Corp Manufacture of semiconductor device

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