JPS56112722A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS56112722A
JPS56112722A JP1456480A JP1456480A JPS56112722A JP S56112722 A JPS56112722 A JP S56112722A JP 1456480 A JP1456480 A JP 1456480A JP 1456480 A JP1456480 A JP 1456480A JP S56112722 A JPS56112722 A JP S56112722A
Authority
JP
Japan
Prior art keywords
hydrogen
diffusing
layer
heating
nitrogen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1456480A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6249981B2 (enExample
Inventor
Tatsumi Takaira
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Kyushu Ltd
Original Assignee
NEC Kyushu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Kyushu Ltd filed Critical NEC Kyushu Ltd
Priority to JP1456480A priority Critical patent/JPS56112722A/ja
Publication of JPS56112722A publication Critical patent/JPS56112722A/ja
Publication of JPS6249981B2 publication Critical patent/JPS6249981B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P32/12—
    • H10P32/171—
JP1456480A 1980-02-08 1980-02-08 Manufacture of semiconductor device Granted JPS56112722A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1456480A JPS56112722A (en) 1980-02-08 1980-02-08 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1456480A JPS56112722A (en) 1980-02-08 1980-02-08 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS56112722A true JPS56112722A (en) 1981-09-05
JPS6249981B2 JPS6249981B2 (enExample) 1987-10-22

Family

ID=11864643

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1456480A Granted JPS56112722A (en) 1980-02-08 1980-02-08 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS56112722A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6432830B1 (en) * 1998-05-15 2002-08-13 Applied Materials, Inc. Semiconductor fabrication process
US7772097B2 (en) 2007-11-05 2010-08-10 Asm America, Inc. Methods of selectively depositing silicon-containing films
JP2013232529A (ja) * 2012-04-27 2013-11-14 Tokyo Electron Ltd 不純物拡散方法、基板処理装置及び半導体装置の製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5016151A (enExample) * 1973-06-15 1975-02-20

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5016151A (enExample) * 1973-06-15 1975-02-20

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6432830B1 (en) * 1998-05-15 2002-08-13 Applied Materials, Inc. Semiconductor fabrication process
US7772097B2 (en) 2007-11-05 2010-08-10 Asm America, Inc. Methods of selectively depositing silicon-containing films
JP2013232529A (ja) * 2012-04-27 2013-11-14 Tokyo Electron Ltd 不純物拡散方法、基板処理装置及び半導体装置の製造方法

Also Published As

Publication number Publication date
JPS6249981B2 (enExample) 1987-10-22

Similar Documents

Publication Publication Date Title
DE3371582D1 (en) Method of making silicon oxide layers
GB1276012A (en) Methods of producing antimony-containing layers on semiconductor bodies
JPS5514839A (en) Treating method for ion nitriding
GB1398952A (en) Diffusion of arsenic ito silicon substrates
JPS56112722A (en) Manufacture of semiconductor device
JPS6476727A (en) Manufacture of semiconductor device
JPS54104770A (en) Heat treatment method for 3-5 group compound semiconductor
TW350981B (en) Method and system for plasma-processing
GB1266380A (enExample)
JPS5757448A (en) Production of shadow mask
JPS6469017A (en) Formation of oxynitride film
GB1115101A (en) Improvements in or relating to the manufacture of semiconductor bodies
JPS57118636A (en) Manufacture of semiconductor device
JPS5745227A (en) Manufacture of semiconductor device
JPS57194522A (en) Thermal treatment of semiconductor wafer
JPS5736830A (en) Diffusing method for impurity to semiconductor
JPS6417425A (en) Manufacture of semiconductor device
JPS556879A (en) Manufacture of semiconductor device
JPS5655038A (en) Diffusing method for impurity into semiconductor wafer
JPS6439716A (en) Vapor growing method
JPS55165627A (en) Method for diffusing impurity into semiconductor
JPS5563882A (en) Manufacturing method of light-permeable electrode
JPS5526625A (en) Method of producing resistance film
JPS57132358A (en) Manufacture of semiconductor device
JPS57194524A (en) Manufacture of semiconductor device