GB1266380A - - Google Patents
Info
- Publication number
- GB1266380A GB1266380A GB1266380DA GB1266380A GB 1266380 A GB1266380 A GB 1266380A GB 1266380D A GB1266380D A GB 1266380DA GB 1266380 A GB1266380 A GB 1266380A
- Authority
- GB
- United Kingdom
- Prior art keywords
- impurity
- wafer
- preheating
- minutes
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
- H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
- H10P32/12—Diffusion of dopants within, into or out of semiconductor bodies or layers between a solid phase and a gaseous phase
-
- E—FIXED CONSTRUCTIONS
- E04—BUILDING
- E04F—FINISHING WORK ON BUILDINGS, e.g. STAIRS, FLOORS
- E04F17/00—Vertical ducts; Channels, e.g. for drainage
- E04F17/02—Vertical ducts; Channels, e.g. for drainage for carrying away waste gases, e.g. flue gases; Building elements specially designed therefor, e.g. shaped bricks or sets thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
- H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
- H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
- H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/003—Anneal
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/04—Dopants, special
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/041—Doping control in crystal growth
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/079—Inert carrier gas
Landscapes
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Civil Engineering (AREA)
- Structural Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Formation Of Insulating Films (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US77298368A | 1968-11-04 | 1968-11-04 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1266380A true GB1266380A (enExample) | 1972-03-08 |
Family
ID=25096808
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1266380D Expired GB1266380A (enExample) | 1968-11-04 | 1969-10-16 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US3649388A (enExample) |
| JP (1) | JPS4822662B1 (enExample) |
| DE (1) | DE1955130B2 (enExample) |
| FR (1) | FR2022493A1 (enExample) |
| GB (1) | GB1266380A (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3753809A (en) * | 1970-01-09 | 1973-08-21 | Ibm | Method for obtaining optimum phosphorous concentration in semiconductor wafers |
| GB1332994A (en) * | 1971-01-11 | 1973-10-10 | Mullard Ltd | Method of diffusing an impurity into a semiconductor body |
| US3836215A (en) * | 1973-02-15 | 1974-09-17 | Ingersoll Rand Co | Shaft vibration dampening means and method |
| US4465529A (en) * | 1981-06-05 | 1984-08-14 | Mitsubishi Denki Kabushiki Kaisha | Method of producing semiconductor device |
| CN101980381B (zh) * | 2010-09-29 | 2011-11-30 | 山东力诺太阳能电力股份有限公司 | 一种晶体硅太阳能电池双扩散工艺 |
-
1968
- 1968-11-04 US US772983A patent/US3649388A/en not_active Expired - Lifetime
-
1969
- 1969-09-24 FR FR6932487A patent/FR2022493A1/fr not_active Withdrawn
- 1969-10-16 GB GB1266380D patent/GB1266380A/en not_active Expired
- 1969-11-03 DE DE1955130A patent/DE1955130B2/de not_active Ceased
- 1969-11-04 JP JP44087668A patent/JPS4822662B1/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| DE1955130B2 (de) | 1979-11-29 |
| FR2022493A1 (enExample) | 1970-07-31 |
| JPS4822662B1 (enExample) | 1973-07-07 |
| US3649388A (en) | 1972-03-14 |
| DE1955130A1 (de) | 1970-05-27 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PCNP | Patent ceased through non-payment of renewal fee |