JPS556879A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS556879A
JPS556879A JP7963278A JP7963278A JPS556879A JP S556879 A JPS556879 A JP S556879A JP 7963278 A JP7963278 A JP 7963278A JP 7963278 A JP7963278 A JP 7963278A JP S556879 A JPS556879 A JP S556879A
Authority
JP
Japan
Prior art keywords
diffusion furnace
heating
temperature
heating portion
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7963278A
Other languages
Japanese (ja)
Inventor
Minoru Kawakami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP7963278A priority Critical patent/JPS556879A/en
Publication of JPS556879A publication Critical patent/JPS556879A/en
Pending legal-status Critical Current

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Abstract

PURPOSE: To uniformalize the characteristics of this semiconductor device, by equalizing the temperature distribution of a diffusion furnace under a condition that inert gases are introduced into the diffusion furnace.
CONSTITUTION: The temperature of a heating portion of a diffusion furnace is set that the temperature of the heating portion become to uniform temperature under a condition that is kept in a nitrogen gas atmosphere over the whole range of the heating portion. Boron duffusion regions 2', 4' are formed by admitting a silicon water 1, on which boron is deposited, into the diffusion furnace and by heating it. Thereafter, a p type emitter range 2 and a p type base range 4 are made up by changing over the atmospheric gases to hydrogen while continueing the heating of the diffusion furnace.
COPYRIGHT: (C)1980,JPO&Japio
JP7963278A 1978-06-29 1978-06-29 Manufacture of semiconductor device Pending JPS556879A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7963278A JPS556879A (en) 1978-06-29 1978-06-29 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7963278A JPS556879A (en) 1978-06-29 1978-06-29 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS556879A true JPS556879A (en) 1980-01-18

Family

ID=13695453

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7963278A Pending JPS556879A (en) 1978-06-29 1978-06-29 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS556879A (en)

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