JPS56108256A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS56108256A
JPS56108256A JP1036080A JP1036080A JPS56108256A JP S56108256 A JPS56108256 A JP S56108256A JP 1036080 A JP1036080 A JP 1036080A JP 1036080 A JP1036080 A JP 1036080A JP S56108256 A JPS56108256 A JP S56108256A
Authority
JP
Japan
Prior art keywords
region
wiring
input
type
conductivity type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1036080A
Other languages
English (en)
Inventor
Mikio Bessho
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP1036080A priority Critical patent/JPS56108256A/ja
Publication of JPS56108256A publication Critical patent/JPS56108256A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP1036080A 1980-01-31 1980-01-31 Semiconductor device Pending JPS56108256A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1036080A JPS56108256A (en) 1980-01-31 1980-01-31 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1036080A JPS56108256A (en) 1980-01-31 1980-01-31 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS56108256A true JPS56108256A (en) 1981-08-27

Family

ID=11747991

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1036080A Pending JPS56108256A (en) 1980-01-31 1980-01-31 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS56108256A (ja)

Similar Documents

Publication Publication Date Title
JPS5710992A (en) Semiconductor device and manufacture therefor
KR850000815A (ko) 정확히 설정된 동작전압을 갖는 반도체 과전압 억제기 및 그의 제조방법
JPS57208177A (en) Semiconductor negative resistance element
JPS56108256A (en) Semiconductor device
JPS55150271A (en) Semiconductor device
JPS56126977A (en) Junction type field effect transistor
JPS6467970A (en) Thin film transistor
ES463621A1 (es) Una estructura de un dispositivo semiconductor.
JPS5526624A (en) Semiconductor device
JPS53108394A (en) Semiconductor intergrated circuit device
JPS56126971A (en) Thin film field effect element
JPS5289476A (en) Semiconductor device
JPS5339088A (en) Insulated gate type field effect semiconductor device
JPS54149479A (en) Semiconductor device
JPS57164565A (en) Thyristor
JPS6450465A (en) Semiconductor device
JPS5268379A (en) Semiconductor device
JPS5493980A (en) Field-effect semicoductor device
JPS57196564A (en) Semiconductor device
JPS6417475A (en) Manufacture of mos semiconductor device
JPS5735370A (en) Semiconductor device
JPS5275189A (en) Charge transfer device
JPS551158A (en) Semiconductor device
JPS5469970A (en) Integrated circuit device
JPS56167347A (en) Semiconductor device