JPS5599759A - Semiconductor integrated circuit device - Google Patents
Semiconductor integrated circuit deviceInfo
- Publication number
- JPS5599759A JPS5599759A JP713279A JP713279A JPS5599759A JP S5599759 A JPS5599759 A JP S5599759A JP 713279 A JP713279 A JP 713279A JP 713279 A JP713279 A JP 713279A JP S5599759 A JPS5599759 A JP S5599759A
- Authority
- JP
- Japan
- Prior art keywords
- base
- region
- integrated circuit
- collector
- semiconductor integrated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
- H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
- H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP713279A JPS5599759A (en) | 1979-01-26 | 1979-01-26 | Semiconductor integrated circuit device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP713279A JPS5599759A (en) | 1979-01-26 | 1979-01-26 | Semiconductor integrated circuit device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5599759A true JPS5599759A (en) | 1980-07-30 |
Family
ID=11657542
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP713279A Pending JPS5599759A (en) | 1979-01-26 | 1979-01-26 | Semiconductor integrated circuit device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5599759A (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS596626A (ja) * | 1982-07-02 | 1984-01-13 | Nippon Telegr & Teleph Corp <Ntt> | 半導体論理回路 |
US5880001A (en) * | 1995-12-20 | 1999-03-09 | National Semiconductor Corporation | Method for forming epitaxial pinched resistor having reduced conductive cross sectional area |
-
1979
- 1979-01-26 JP JP713279A patent/JPS5599759A/ja active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS596626A (ja) * | 1982-07-02 | 1984-01-13 | Nippon Telegr & Teleph Corp <Ntt> | 半導体論理回路 |
JPH0357652B2 (ja) * | 1982-07-02 | 1991-09-02 | Nippon Telegraph & Telephone | |
US5880001A (en) * | 1995-12-20 | 1999-03-09 | National Semiconductor Corporation | Method for forming epitaxial pinched resistor having reduced conductive cross sectional area |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
SE7701884L (sv) | Halvledaranordning med sekerhetskrets | |
DE69128364D1 (de) | Lateraler Bipolartransistor | |
JPS5599759A (en) | Semiconductor integrated circuit device | |
JPS52154383A (en) | Semiconductor integrated circuit device | |
JPS57100743A (en) | Semiconductor integrated circuit device | |
EP0077921A3 (en) | Semiconductor device | |
JPS538570A (en) | Semiconductor device | |
JPS5615068A (en) | Semiconductor device and manufacture thereof | |
JPS52133761A (en) | Integrated circuit | |
JPS5261976A (en) | Semiconductor integrated circuit device and its production | |
JPS56126959A (en) | Semiconductor device | |
JPS5297683A (en) | Semiconductor circuit device | |
JPS5383584A (en) | Semiconductor logic element | |
JPS5689130A (en) | Electronic circuit | |
JPS53118384A (en) | Semiconductor logic circuit device | |
JPS533071A (en) | Semiconductor device | |
JPS5660057A (en) | Semiconductor device | |
FR2269788A1 (en) | Integrated semiconductor cct. for flip-flop - has two complementary transistors implanted in one zone of first conductivity | |
JPS5735366A (en) | Semiconductor integrated circuit device | |
JPS5294779A (en) | Semiconductor device | |
JPS54162482A (en) | Semiconductor element | |
JPS5382184A (en) | Semiconductor device | |
FR2406894A1 (fr) | Element commutateur integre | |
JPS57140056A (en) | Semiconductor storage device | |
JPS5335482A (en) | Bipolar semiconductor integrated circuit |