JPS5591156A - Semiconductor memory - Google Patents
Semiconductor memoryInfo
- Publication number
- JPS5591156A JPS5591156A JP16336378A JP16336378A JPS5591156A JP S5591156 A JPS5591156 A JP S5591156A JP 16336378 A JP16336378 A JP 16336378A JP 16336378 A JP16336378 A JP 16336378A JP S5591156 A JPS5591156 A JP S5591156A
- Authority
- JP
- Japan
- Prior art keywords
- type
- layer
- layers
- gate
- gate layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
Abstract
PURPOSE:To eliminate the detrimental parasitic effect of a semiconductor memory having an SIT type cell configuration by providing a reverse conductivity type high density buring layer to a gate layer under the gate layer in the memory. CONSTITUTION:n<->-Type layers 26A-26C are extended selectively through n<+>-type buried layers 24A-24C, respectively on a p<->-type silicon substrate 22, and p<+>-type gate layer 28A-28C are formed via predetermined portions 26A1-26A3, respectively on the surface of the substrate 22. The n<->-type layer portions 26A1-26A3 between the portions 28A1 and 28A4 of the gate layers are channels and normally depleted. The drain portion 30a of an SiO2 film 30 on the surface of the substrate is formed thinner than the other films, and word line aluminum layers 32A-32C are disposed perpendicularly to the layers 24A-24C, respectively on the film 30 to thereby form parallel plate type information storage capacities at the respective crossovers. Since the gate layer 28A-28C do not face oppositely directly with the p<->-type layer 22 but always indirectly through the buried layers 24A-24C, respectively in this configuration, the depletion layer does not reach the layer 22 to thereby prevent in advance the undesired punch-through phenomenon.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16336378A JPS5591156A (en) | 1978-12-28 | 1978-12-28 | Semiconductor memory |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16336378A JPS5591156A (en) | 1978-12-28 | 1978-12-28 | Semiconductor memory |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5591156A true JPS5591156A (en) | 1980-07-10 |
JPS6410950B2 JPS6410950B2 (en) | 1989-02-22 |
Family
ID=15772449
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16336378A Granted JPS5591156A (en) | 1978-12-28 | 1978-12-28 | Semiconductor memory |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5591156A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008306095A (en) * | 2007-06-11 | 2008-12-18 | Rohm Co Ltd | Semiconductor device |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53105986A (en) * | 1977-02-26 | 1978-09-14 | Handotai Kenkyu Shinkokai | Semiconductor memory |
-
1978
- 1978-12-28 JP JP16336378A patent/JPS5591156A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53105986A (en) * | 1977-02-26 | 1978-09-14 | Handotai Kenkyu Shinkokai | Semiconductor memory |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008306095A (en) * | 2007-06-11 | 2008-12-18 | Rohm Co Ltd | Semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JPS6410950B2 (en) | 1989-02-22 |
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