JPS5588336A - Pattern formation by anisotropic etching reagent - Google Patents
Pattern formation by anisotropic etching reagentInfo
- Publication number
- JPS5588336A JPS5588336A JP15997378A JP15997378A JPS5588336A JP S5588336 A JPS5588336 A JP S5588336A JP 15997378 A JP15997378 A JP 15997378A JP 15997378 A JP15997378 A JP 15997378A JP S5588336 A JPS5588336 A JP S5588336A
- Authority
- JP
- Japan
- Prior art keywords
- silicon substrate
- mask
- etching reagent
- anisotropic etching
- rectangular
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Weting (AREA)
Abstract
PURPOSE: To obtain a perfect rectangular etching pattern by a method wherein the rectangular mask is arranged with its one side taken at a specific angle in <110> direction of a silicon substrate, and an anisotropic etching reagent is used therefor.
CONSTITUTION: An SiO2 film is formed on a silicon substrate with (100) face as the surface, and the SiO2 film is processed to a rectangular pattern mask through photolithography. When forming the rectangular pattern mask, an arrangement is such that one side of the mask will form a specific angle (θ) or will incline 53°, 37°, or 4° in <110> direction of the silicon substrate. Then, the silicon substrate is subjected to etching by means of an anisotrophic etching reagent or, for example, an aqueous solution of ethylenediamine and pyrocatechol. With the top smaller than the bottom, a perfect rectangular pattern is thus obtainable.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15997378A JPS5588336A (en) | 1978-12-27 | 1978-12-27 | Pattern formation by anisotropic etching reagent |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15997378A JPS5588336A (en) | 1978-12-27 | 1978-12-27 | Pattern formation by anisotropic etching reagent |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5588336A true JPS5588336A (en) | 1980-07-04 |
Family
ID=15705210
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15997378A Pending JPS5588336A (en) | 1978-12-27 | 1978-12-27 | Pattern formation by anisotropic etching reagent |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5588336A (en) |
-
1978
- 1978-12-27 JP JP15997378A patent/JPS5588336A/en active Pending
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