JPS5578574A - Manufacture of insulated-gate field-effect transistor - Google Patents

Manufacture of insulated-gate field-effect transistor

Info

Publication number
JPS5578574A
JPS5578574A JP15286078A JP15286078A JPS5578574A JP S5578574 A JPS5578574 A JP S5578574A JP 15286078 A JP15286078 A JP 15286078A JP 15286078 A JP15286078 A JP 15286078A JP S5578574 A JPS5578574 A JP S5578574A
Authority
JP
Japan
Prior art keywords
windows
diffused
window
insulated
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15286078A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6143866B2 (https=
Inventor
Katsumi Toma
Masazumi Setoda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Victor Company of Japan Ltd
Original Assignee
Victor Company of Japan Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Victor Company of Japan Ltd filed Critical Victor Company of Japan Ltd
Priority to JP15286078A priority Critical patent/JPS5578574A/ja
Publication of JPS5578574A publication Critical patent/JPS5578574A/ja
Publication of JPS6143866B2 publication Critical patent/JPS6143866B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/519—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their top-view geometrical layouts
JP15286078A 1978-12-09 1978-12-09 Manufacture of insulated-gate field-effect transistor Granted JPS5578574A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15286078A JPS5578574A (en) 1978-12-09 1978-12-09 Manufacture of insulated-gate field-effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15286078A JPS5578574A (en) 1978-12-09 1978-12-09 Manufacture of insulated-gate field-effect transistor

Publications (2)

Publication Number Publication Date
JPS5578574A true JPS5578574A (en) 1980-06-13
JPS6143866B2 JPS6143866B2 (https=) 1986-09-30

Family

ID=15549696

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15286078A Granted JPS5578574A (en) 1978-12-09 1978-12-09 Manufacture of insulated-gate field-effect transistor

Country Status (1)

Country Link
JP (1) JPS5578574A (https=)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5947770A (ja) * 1982-08-09 1984-03-17 エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン 半導体装置
US4801986A (en) * 1987-04-03 1989-01-31 General Electric Company Vertical double diffused metal oxide semiconductor VDMOS device with increased safe operating area and method
US4823176A (en) * 1987-04-03 1989-04-18 General Electric Company Vertical double diffused metal oxide semiconductor (VDMOS) device including high voltage junction exhibiting increased safe operating area
JPH01194364A (ja) * 1988-01-28 1989-08-04 Nec Corp 縦型高耐圧半導体装置
JPH01262668A (ja) * 1988-04-13 1989-10-19 Mitsubishi Electric Corp 電界効果型半導体装置
US4883767A (en) * 1986-12-05 1989-11-28 General Electric Company Method of fabricating self aligned semiconductor devices
JP2006510206A (ja) * 2002-12-10 2006-03-23 フェアチャイルド・セミコンダクター・コーポレーション 集積回路構造体

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102392701B1 (ko) * 2019-01-15 2022-04-28 엘지전자 주식회사 변환 스킵 플래그를 이용한 영상 코딩 방법 및 장치

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5947770A (ja) * 1982-08-09 1984-03-17 エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン 半導体装置
US4883767A (en) * 1986-12-05 1989-11-28 General Electric Company Method of fabricating self aligned semiconductor devices
US4801986A (en) * 1987-04-03 1989-01-31 General Electric Company Vertical double diffused metal oxide semiconductor VDMOS device with increased safe operating area and method
US4823176A (en) * 1987-04-03 1989-04-18 General Electric Company Vertical double diffused metal oxide semiconductor (VDMOS) device including high voltage junction exhibiting increased safe operating area
JPH01194364A (ja) * 1988-01-28 1989-08-04 Nec Corp 縦型高耐圧半導体装置
JPH01262668A (ja) * 1988-04-13 1989-10-19 Mitsubishi Electric Corp 電界効果型半導体装置
JP2006510206A (ja) * 2002-12-10 2006-03-23 フェアチャイルド・セミコンダクター・コーポレーション 集積回路構造体

Also Published As

Publication number Publication date
JPS6143866B2 (https=) 1986-09-30

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