JPS5561070A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5561070A
JPS5561070A JP13413578A JP13413578A JPS5561070A JP S5561070 A JPS5561070 A JP S5561070A JP 13413578 A JP13413578 A JP 13413578A JP 13413578 A JP13413578 A JP 13413578A JP S5561070 A JPS5561070 A JP S5561070A
Authority
JP
Japan
Prior art keywords
groove
layer
depth
misfet
sapphire
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13413578A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6141149B2 (enExample
Inventor
Yoshiiku Togei
Nobuo Sasaki
Yasuo Kobayashi
Takashi Iwai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP13413578A priority Critical patent/JPS5561070A/ja
Publication of JPS5561070A publication Critical patent/JPS5561070A/ja
Publication of JPS6141149B2 publication Critical patent/JPS6141149B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP13413578A 1978-10-31 1978-10-31 Semiconductor device Granted JPS5561070A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13413578A JPS5561070A (en) 1978-10-31 1978-10-31 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13413578A JPS5561070A (en) 1978-10-31 1978-10-31 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5561070A true JPS5561070A (en) 1980-05-08
JPS6141149B2 JPS6141149B2 (enExample) 1986-09-12

Family

ID=15121280

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13413578A Granted JPS5561070A (en) 1978-10-31 1978-10-31 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5561070A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1995028741A1 (de) * 1994-04-19 1995-10-26 Siemens Aktiengesellschaft Mikroelektronisches bauelement und verfahren zu dessen herstellung
US5808340A (en) * 1996-09-18 1998-09-15 Advanced Micro Devices, Inc. Short channel self aligned VMOS field effect transistor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1995028741A1 (de) * 1994-04-19 1995-10-26 Siemens Aktiengesellschaft Mikroelektronisches bauelement und verfahren zu dessen herstellung
US5828076A (en) * 1994-04-19 1998-10-27 Siemens Aktiengesellschaft Microelectronic component and process for its production
US5808340A (en) * 1996-09-18 1998-09-15 Advanced Micro Devices, Inc. Short channel self aligned VMOS field effect transistor

Also Published As

Publication number Publication date
JPS6141149B2 (enExample) 1986-09-12

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