JPS5552266A - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
JPS5552266A
JPS5552266A JP12490378A JP12490378A JPS5552266A JP S5552266 A JPS5552266 A JP S5552266A JP 12490378 A JP12490378 A JP 12490378A JP 12490378 A JP12490378 A JP 12490378A JP S5552266 A JPS5552266 A JP S5552266A
Authority
JP
Japan
Prior art keywords
diffusion
layer
channel
section
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12490378A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6252473B2 (cs
Inventor
Shinji Morozumi
Tatsuji Asakawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP12490378A priority Critical patent/JPS5552266A/ja
Publication of JPS5552266A publication Critical patent/JPS5552266A/ja
Publication of JPS6252473B2 publication Critical patent/JPS6252473B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/857—Complementary IGFETs, e.g. CMOS comprising an N-type well but not a P-type well

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
JP12490378A 1978-10-11 1978-10-11 Semiconductor integrated circuit Granted JPS5552266A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12490378A JPS5552266A (en) 1978-10-11 1978-10-11 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12490378A JPS5552266A (en) 1978-10-11 1978-10-11 Semiconductor integrated circuit

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP62133883A Division JPS6325965A (ja) 1987-05-29 1987-05-29 半導体集積回路

Publications (2)

Publication Number Publication Date
JPS5552266A true JPS5552266A (en) 1980-04-16
JPS6252473B2 JPS6252473B2 (cs) 1987-11-05

Family

ID=14896952

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12490378A Granted JPS5552266A (en) 1978-10-11 1978-10-11 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS5552266A (cs)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60116165A (ja) * 1983-11-09 1985-06-22 シーメンス、アクチエンゲゼルシヤフト 超高密度集積回路のｍｏｓトランジスタの製造方法
US4684971A (en) * 1981-03-13 1987-08-04 American Telephone And Telegraph Company, At&T Bell Laboratories Ion implanted CMOS devices
US4724221A (en) * 1981-10-28 1988-02-09 U.S. Philips Corporation High-speed, low-power-dissipation integrated circuits
JPH0653420A (ja) * 1992-06-16 1994-02-25 Samsung Electron Co Ltd ＢｉＣＭＯＳトランジスタ及びその製造方法
US5391904A (en) * 1988-09-01 1995-02-21 Fujitsu Limited Semiconductor delay circuit device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0313871U (cs) * 1989-06-23 1991-02-13

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5226177A (en) * 1975-08-25 1977-02-26 Toshiba Corp Semi-conductor unit

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5226177A (en) * 1975-08-25 1977-02-26 Toshiba Corp Semi-conductor unit

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4684971A (en) * 1981-03-13 1987-08-04 American Telephone And Telegraph Company, At&T Bell Laboratories Ion implanted CMOS devices
US4724221A (en) * 1981-10-28 1988-02-09 U.S. Philips Corporation High-speed, low-power-dissipation integrated circuits
JPS60116165A (ja) * 1983-11-09 1985-06-22 シーメンス、アクチエンゲゼルシヤフト 超高密度集積回路のｍｏｓトランジスタの製造方法
US5391904A (en) * 1988-09-01 1995-02-21 Fujitsu Limited Semiconductor delay circuit device
JPH0653420A (ja) * 1992-06-16 1994-02-25 Samsung Electron Co Ltd ＢｉＣＭＯＳトランジスタ及びその製造方法

Also Published As

Publication number Publication date
JPS6252473B2 (cs) 1987-11-05

Similar Documents

Publication Publication Date Title
JPS5413779A (en) Semiconductor integrated circuit device
JPS5688354A (en) Semiconductor integrated circuit device
JPS5552266A (en) Semiconductor integrated circuit
KR890005891A (ko) 반도체 집적회로 장치 및 그 제조방법
JPS55132072A (en) Mos semiconductor device
JPS5619660A (en) Complementary mis logic circuit
JPS5552267A (en) Semiconductor meomory
JPS5565455A (en) Manufacture of semiconductor device
JPS5448179A (en) Mis-type semiconductor integrated circuit device
JPS5723259A (en) Complementary type mos semiconductor device
JPS5610958A (en) Semiconductor circuit
JPS6427239A (en) Semiconductor integrated circuit
JPS6427272A (en) Semiconductor device
JPS5567166A (en) Preparation of mos type semiconductor device
JPS54128295A (en) Mis-type semiconductor integrated circuit device
JPS55150269A (en) Semiconductor integrated circuit
JPS5762565A (en) Semiconductor device
JPS5632767A (en) Mos inverter
JPS5583265A (en) Semiconductor device and method of fabricating the same
JPS5586159A (en) Protective circuit for mos semiconductor device
JPS5552254A (en) Semiconductor device
JPS5736868A (en) Manufacture of nonvolatile semiconductor memory device
JPS5478672A (en) Complementary silicon gate mos field effect semiconductor device and its manufacture
JPS5578572A (en) Cmos-transistor circuit
JPS5721855A (en) Manufacture of complementary mos semiconductor device