JPS5550668A - Semiconductor pressure converter - Google Patents
Semiconductor pressure converterInfo
- Publication number
- JPS5550668A JPS5550668A JP12254078A JP12254078A JPS5550668A JP S5550668 A JPS5550668 A JP S5550668A JP 12254078 A JP12254078 A JP 12254078A JP 12254078 A JP12254078 A JP 12254078A JP S5550668 A JPS5550668 A JP S5550668A
- Authority
- JP
- Japan
- Prior art keywords
- receiving portion
- pressure receiving
- film
- die
- sio
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 238000002161 passivation Methods 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 238000005260 corrosion Methods 0.000 abstract 1
- 230000007797 corrosion Effects 0.000 abstract 1
- 230000007613 environmental effect Effects 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/0061—Electrical connection means
- G01L19/0084—Electrical connection means to the outside of the housing
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/14—Housings
- G01L19/147—Details about the mounting of the sensor to support or covering means
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
- G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
- G01L9/0054—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements integral with a semiconducting diaphragm
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/1015—Shape
- H01L2924/10155—Shape being other than a cuboid
- H01L2924/10158—Shape being other than a cuboid at the passive surface
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
Abstract
PURPOSE: To reduce the zero degree temperature dependence of a semiconductor pressure converter and improve the insulating properties thereof by coating the same film as a passivation film provided on the surface of a thin pressure receiving portion of a silicon diaphragm disposed on a galss die even on the back of the thin pressure receiving portion thereof.
CONSTITUTION: Impurities are diffused on both sides of the surface of a silicon diaphragm 10 to thereby form a strain gauge 20, and corrosion resistant electrodes 30 of aluminum of Ti-Pd-Au or the like are mounted thereat. Passivation film 40 of SiO2 or the like is coated on the upper surface except for the electrodes 30, a hole 60 with bottom is perforated at the lower surface of the diaphragm 10 to thus form a thin pressure receiving portion 10a, and thick stationary portions 10a disposed at both sides of the portion 10b are secured to glass die 50 by means of anode junction process or the like. The same SiO2 film 40a as the film 40 provided on the surface is newly coated on the back surface of the pressure receiving portion 10b facing oppositely to the die 50 by means of a CVD process. Thus, even if the environmental temperature is at 100°C, the temperature dependence is not more than several percent.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12254078A JPS5550668A (en) | 1978-10-06 | 1978-10-06 | Semiconductor pressure converter |
AU51176/79A AU5117679A (en) | 1978-10-06 | 1979-09-25 | Semiconductor pressure transducer assembly |
FR7924695A FR2438264A1 (en) | 1978-10-06 | 1979-10-04 | SEMICONDUCTOR PRESSURE TRANSDUCER ASSEMBLY |
GB7934401A GB2034970A (en) | 1978-10-06 | 1979-10-04 | Semiconductor pressure transducer |
DE19792940497 DE2940497A1 (en) | 1978-10-06 | 1979-10-05 | SEMICONDUCTOR PRESSURE TRANSDUCER ARRANGEMENT |
IT7926278A IT7926278A0 (en) | 1978-10-06 | 1979-10-05 | SEMI-CONDUCTOR PRESSURE TRANSDUCER ASSEMBLY. |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12254078A JPS5550668A (en) | 1978-10-06 | 1978-10-06 | Semiconductor pressure converter |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5550668A true JPS5550668A (en) | 1980-04-12 |
Family
ID=14838386
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12254078A Pending JPS5550668A (en) | 1978-10-06 | 1978-10-06 | Semiconductor pressure converter |
Country Status (6)
Country | Link |
---|---|
JP (1) | JPS5550668A (en) |
AU (1) | AU5117679A (en) |
DE (1) | DE2940497A1 (en) |
FR (1) | FR2438264A1 (en) |
GB (1) | GB2034970A (en) |
IT (1) | IT7926278A0 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57142533A (en) * | 1981-02-27 | 1982-09-03 | Mitsubishi Electric Corp | Pressure sensor |
JPS6056244U (en) * | 1983-09-26 | 1985-04-19 | 住友電気工業株式会社 | semiconductor pressure sensor |
JPS60149369A (en) * | 1984-01-14 | 1985-08-06 | Hitoshi Nagaoka | Mycelial extract of ganoderma lucidum and production thereof |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2229816B (en) * | 1989-03-31 | 1992-11-18 | Stc Plc | Pressure sensor |
JPH0465643A (en) * | 1990-07-05 | 1992-03-02 | Mitsubishi Electric Corp | Semiconductor pressure sensor and its manufacture |
DE4309917A1 (en) * | 1992-03-30 | 1993-10-07 | Awa Microelectronics | Process for the production of silicon microstructures and silicon microstructure |
AU660358B2 (en) * | 1992-03-30 | 1995-06-22 | Awa Microelectronics Pty Limited | Silicon transducer |
US6647794B1 (en) * | 2002-05-06 | 2003-11-18 | Rosemount Inc. | Absolute pressure sensor |
TWI583931B (en) * | 2016-02-02 | 2017-05-21 | Asia Pacific Microsystems Inc | Miniature piezoresistive pressure sensor |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL162254B (en) * | 1968-11-29 | 1979-11-15 | Philips Nv | SEMI-CONDUCTOR DEVICE FOR CONVERSION OF MECHANICAL VOLTAGES INTO ELECTRICAL SIGNALS AND METHOD OF MANUFACTURING THIS. |
US3819431A (en) * | 1971-10-05 | 1974-06-25 | Kulite Semiconductor Products | Method of making transducers employing integral protective coatings and supports |
JPS5217780A (en) * | 1975-07-04 | 1977-02-09 | Hitachi Ltd | Pressure convertor with semi-conductor elements |
JPS52127257A (en) * | 1976-04-19 | 1977-10-25 | Hitachi Ltd | Displacement converter |
-
1978
- 1978-10-06 JP JP12254078A patent/JPS5550668A/en active Pending
-
1979
- 1979-09-25 AU AU51176/79A patent/AU5117679A/en not_active Abandoned
- 1979-10-04 FR FR7924695A patent/FR2438264A1/en not_active Withdrawn
- 1979-10-04 GB GB7934401A patent/GB2034970A/en not_active Withdrawn
- 1979-10-05 IT IT7926278A patent/IT7926278A0/en unknown
- 1979-10-05 DE DE19792940497 patent/DE2940497A1/en not_active Withdrawn
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57142533A (en) * | 1981-02-27 | 1982-09-03 | Mitsubishi Electric Corp | Pressure sensor |
JPS6056244U (en) * | 1983-09-26 | 1985-04-19 | 住友電気工業株式会社 | semiconductor pressure sensor |
JPS60149369A (en) * | 1984-01-14 | 1985-08-06 | Hitoshi Nagaoka | Mycelial extract of ganoderma lucidum and production thereof |
JPH0435149B2 (en) * | 1984-01-14 | 1992-06-10 | Hitoshi Nagaoka |
Also Published As
Publication number | Publication date |
---|---|
DE2940497A1 (en) | 1980-04-10 |
FR2438264A1 (en) | 1980-04-30 |
IT7926278A0 (en) | 1979-10-05 |
AU5117679A (en) | 1980-04-17 |
GB2034970A (en) | 1980-06-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5550668A (en) | Semiconductor pressure converter | |
JPS52127257A (en) | Displacement converter | |
JPS54133089A (en) | Thin film capacitor and its manufacture | |
JPS5451490A (en) | Semiconductor pressure converter | |
JPS5352383A (en) | Electrode formation method | |
JPS5432282A (en) | Semiconductor pressre conversion unit | |
JPS5512735A (en) | Semiconductor device | |
JPS5567151A (en) | Semiconductor device | |
JPS5559728A (en) | Insulating coating structure | |
JPS5522819A (en) | Semiconductor strain gauge absolute pressure sensor | |
JPS5745957A (en) | Circuit substrate and manufacture thereof | |
JPS54122088A (en) | Metal substrate for semiconductor-pellet mounting | |
JPS54140884A (en) | Manufacture of semiconductor device | |
JPS6442843A (en) | Semiconductor device | |
JPS54140883A (en) | Semiconductor device | |
JPS5544734A (en) | Semiconductor device | |
JPS54152961A (en) | Semiconductor device | |
JPS57203324A (en) | Digital-to-analog converter | |
JPS57139930A (en) | Semiconductor device | |
JPS5559740A (en) | Semiconductor device | |
JPS53110464A (en) | Semiconductor device | |
KR870010638A (en) | Method of manufacturing metal-insulated semiconductor polycrystalline silicon solar cell | |
JPS5626234A (en) | Semiconductor pressure converter | |
JPS5624939A (en) | Manufacture of semiconductor device | |
JPS5526681A (en) | Semiconductor device and its manufacturing method |