JPS5567151A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5567151A
JPS5567151A JP14035378A JP14035378A JPS5567151A JP S5567151 A JPS5567151 A JP S5567151A JP 14035378 A JP14035378 A JP 14035378A JP 14035378 A JP14035378 A JP 14035378A JP S5567151 A JPS5567151 A JP S5567151A
Authority
JP
Japan
Prior art keywords
wiring
film
semiconductor device
pinhole
humidity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14035378A
Other languages
Japanese (ja)
Inventor
Tadashi Kuragami
Takashi Okuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP14035378A priority Critical patent/JPS5567151A/en
Publication of JPS5567151A publication Critical patent/JPS5567151A/en
Pending legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE: To raise a humidity-resisting property, by making an anodic oxidation film on an electrode or wiring from itself just under a small hole of a protective film.
CONSTITUTION: When an aluminum electrode wiring 8 of a semiconductor device is coated with an SiO2 film 9 made by the CVD process, there is a pinhole 10' in the film 9. The aluminum wiring 8 is anodic-oxidized through the pinhole in a chemiclal liquid to produce an alumina film 11 on the wiring. The aluminum electrode wiring 8 is thus isolated from the atmosphere. Therefore, the wiring is not eroded due to reaction with a PSG film 7 at high temperature and humidity.
COPYRIGHT: (C)1980,JPO&Japio
JP14035378A 1978-11-14 1978-11-14 Semiconductor device Pending JPS5567151A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14035378A JPS5567151A (en) 1978-11-14 1978-11-14 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14035378A JPS5567151A (en) 1978-11-14 1978-11-14 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5567151A true JPS5567151A (en) 1980-05-21

Family

ID=15266846

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14035378A Pending JPS5567151A (en) 1978-11-14 1978-11-14 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5567151A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5877083A (en) * 1994-11-01 1999-03-02 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5877083A (en) * 1994-11-01 1999-03-02 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device

Similar Documents

Publication Publication Date Title
JPS54162969A (en) Plasma etching device
JPS5567151A (en) Semiconductor device
JPS51150536A (en) Water proof under-coating composition for structure
JPS5289468A (en) Semiconductor device
JPS5353256A (en) Semiconductor device
JPS5436182A (en) Manufacture for semiconductor device
JPS5245270A (en) Semiconductor device
JPS52113162A (en) Preparation of semiconductor device
JPS5268371A (en) Semiconductor device
JPS5411674A (en) Semiconductor device of mesa type
JPS547867A (en) Manufacture for semiconductor device
JPS5270766A (en) Semiconductor device
JPS5441673A (en) Semiconductor device and its manufacture
JPS5352388A (en) Semiconductor device
JPS5247689A (en) Process for production of semiconductor device
JPS5432269A (en) Manufacture for semiconductor device
JPS52113161A (en) Semiconductor device
JPS52141565A (en) Manufacture of semiconductor unit
JPS53110464A (en) Semiconductor device
JPS51142273A (en) Method of manufacturing semiconductor device
JPS5386577A (en) Production of semiconductor device
JPS53146571A (en) Semiconductor device
JPS5267971A (en) Manufacture of integrated circuit wafer
JPS52129367A (en) Manufacture of electronic tube heater
JPS53114674A (en) Manufacture for compound semiconductor device