GB2034970A - Semiconductor pressure transducer - Google Patents
Semiconductor pressure transducer Download PDFInfo
- Publication number
- GB2034970A GB2034970A GB7934401A GB7934401A GB2034970A GB 2034970 A GB2034970 A GB 2034970A GB 7934401 A GB7934401 A GB 7934401A GB 7934401 A GB7934401 A GB 7934401A GB 2034970 A GB2034970 A GB 2034970A
- Authority
- GB
- United Kingdom
- Prior art keywords
- pressure transducer
- passivation layer
- silicon
- pressure
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 title claims description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 42
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 42
- 239000010703 silicon Substances 0.000 claims abstract description 42
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 26
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 13
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 13
- 239000000463 material Substances 0.000 claims abstract description 3
- 238000002161 passivation Methods 0.000 claims description 27
- 239000012212 insulator Substances 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 230000002463 transducing effect Effects 0.000 claims description 3
- 239000000758 substrate Substances 0.000 abstract description 10
- 239000000919 ceramic Substances 0.000 description 5
- 239000000446 fuel Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 238000002485 combustion reaction Methods 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- LSNNMFCWUKXFEE-UHFFFAOYSA-N Sulfurous acid Chemical compound OS(O)=O LSNNMFCWUKXFEE-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052729 chemical element Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/0061—Electrical connection means
- G01L19/0084—Electrical connection means to the outside of the housing
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/14—Housings
- G01L19/147—Details about the mounting of the sensor to support or covering means
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
- G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
- G01L9/0054—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements integral with a semiconducting diaphragm
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/1015—Shape
- H01L2924/10155—Shape being other than a cuboid
- H01L2924/10158—Shape being other than a cuboid at the passive surface
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
Abstract
In a pressure transducer comprising a silicon substrate 10 having a thin diaphragm portion 10a the upper face of which contains piezoresistive elements 20 and being covered with a passivating layer 40 (eg of silicon dioxide), the lower surface of the diaphragm is provided with a balancing layer 70 (eg also of silicon dioxide) to eliminate thermally induced stresses in the diaphragm which would otherwise be caused by the difference in thermal expansion coefficients of silicon and the material of the passivating layer. <IMAGE>
Description
SPECIFICATION
Semiconductor pressure transducer assembly
The present invention relates to a semiconductor pressure transducer assembly, more particularly to a semiconductor pressure transducer assembly suitable for use as a pressure sensor in an automobile.
Ordinarily, as an automobile moves, fuel is injected from a fuel injection valve into air which is introduced in an intake manifold, the fuel-air mixture being taken into the inside of the engine and being ignited for combustion thereof. However, if a fixed amount of fuel is always injected irrespective of the pressure of the air which is introduced into the intake manifold, the combustion is imperfect due to a shortage of air, or combustion knock is caused due to an excess of air. In a recent automobile, the quantity of fuel injected from an electronic fuel injection apparatus or the advance angle of an electronic advance device is controlled depending on the intake airpressure which is measured in comparison with atmsopheric pressure or absolute pressure. The combustion in the engine is thereby always kept under the most suitable conditions.To perform this measurement of air pressure in the intake manifold, a semiconductor pressure transducer is widely adopted.
A need exists for pressure transducers having very small physical size and high sensitivity and reliablility, which may be installed in the intake manifold. To achieve this, miniaturized semiconductor pressure transducers have to be fabricated, in which a small-sized silicon diaphragm has a very thin diaphragm portion.
Conventionally, a passivation layer of insulating material, such as silicon dioxide (SiO2), is provided on a surface of the silicon diaphragm for protecting a piezoresistive bridge circuit constructed thereon. However, no passivation layer is provided on the other surface of the thin silicon diaphragm portion which is formed by etching from the bottom surface of the silicon substrate. In the conventional semiconductor pressure transducers having such silicon diaphragm, therefore, the zero-point of output with respect to a standard pressure fluctuates depending on ambient temperature because of strains appearing in the diaphragm portion. This is because, after a bonding process at high temperature, residual stresses are caused owing to the difference in thermal expansion coefficients between the two layers of the thin silicon diaphragm portion and the silicon dioxide passivation layer.For eliminating such residual stresses, the passivation layer should be formed very thinly on the surface of the silicon diaphragm. However, if the thickness of the passivation layer is made very thin, leakage current disadvantageously increases through pin-holes which result from
the thinning of the passivation layer.
Details of the prior art can be seen from
U.S. Patents 3,918,019 and 4,079,508
"Miniature absolute pressure transducer as
sembly and method"; and U.S. Patent
3,397,278 "Anodic bonding".
The present invention provides a semicon
ductor pressure transducer assembly for trans
ducing pressure to electric signal, comprising: a a silicon diaphragm assembly having a thin pressure sensitive portion; piezoresistive ele
ments diffused on one surface of said silicon
diaphragm assembly, the resistance value of
the piezoresistive elements varying depending on the strains appearing in the thin pressure
sensitive portion in response to the pressure
applied thereto; and a passivation layer of
insulator lying on the surface of the silicon
diaphragm assembly on which surface sia
piezoresistive elements are diffused, wherein
on the other surface of said silicon diaphragm
assembly is formed a layer for eliminating
stresses caused in the thin pressure sensitive
portion due to the thermal expansion differ pence between said silicon diaphragm assem
bly and said passivation layer.
An embodiment of the present invention
will now be described by way of example,
with reference to the accompanying drawings,
wherein:
Figure 1 is a sectional view of a semicon
ductor pressure transducer assembly, and
Figure 2 is a sectional view of an entire
pressure sensor apparatus including the semi
conductor pressure transducer assembly
shown in Fig. 1.
Referring now to Fig. 1, on an upper sur
face of a silicon diaphragm assembly 10 of
single silicon crystal, strain gauge elements
20 of piezoresistor are constructed by diffu
sion of impurity such as boron (B). At one end
of each strain guage element 20, an incorrup
tible electrode 30 such as of aluminium (Al) or
of three layers of titanium (Ti), palladium (Pd)
and gold (Au), is formed using an appropriate
method, for example evaporation or spatter
ing. On the upper surface of the processed
silicon diaphragm assembly 10 built with the
strain gauge elements 20 thereon, is formed a
passivation layer 40 such as of silicon dioxide (SiO2). The passivation layer 40 is provided
for the purpose of protecting the strain gauge
elements 20 and for stability of the surface of
the silicon diaphragm assembly 10.
A groove 60 is etched from a bottom sur
face of the silicon diaphragm assembly 10, a
pressure sensitive thin silicon diaphragm por
tion 1 Oa being thereby formed. The silicon
diaphragm assembly 10 therefore comprises
this thin silicon diaphragm portion 1 0a and a
thick silicon supporting portion lOb which
surrounds the diaphragm portion 1 Oa. Onto
the supporting portion 1 Ob of the silicon
diaphragm assembly 10, an insulator sub strate 50 is firmly bonded, for example, using
Anodic Bonding or a bonding pad of adhesive.On an inner surface of the groove 60 which is enclosed by the glass substrate 50, a passivation layer 70 of insulator material which has a thermal expansion coefficient equal to that of the silicon dioxide passivation layer 40, is formed using a method such as the C.V.D. method or spattering, preferably to the same thickness as the passivation layer 40. In a chamber defined between the silicon diaphragm assembly 10 and the glass substrate 50, is provided any desired reference pressure, for example a vacuum or a predetermined pressure reference of inactive gas.
The thermal expansion coefficient (3.2 X 10-6/ C) of the single silicon crystal of the diaphragm assembly is greater than the thermal expansion coefficient (0.48 X 10-6/ C) of silicon dioxide of the passivation layer.
Therefore, if the passivation layer of silicon dioxide were prepared only on the upper surface of the silicon diaphragm assembly, initial stresses would appear in the thin diaphragm portion owing to the difference in the thermal expansion coefficients therebetween.
And if such silicon diaphragm assembly was adopted, the zero-point characteristic of the pressure transducer would fluctuate with respect to the predetermined pressure reference, and the thermal dependency would come to 10% over a range of 100"C in ambient temperature. With the embodiment of the present invention shown in Fig. 1, however, since the passivation layers 40 and 70 are formed on both surfaces of the thin diaphragm portion 10a, the dependency upon the ambient temperature comes down to a few percent over the range of 100"C.
A further advantage of this embodiment is that the thickness of the passivation layer 40 formed on the upper surface of the silicon diaphragm assembly 10 can be made sufficient so as to provide adequate protection for the insulation of the piezoresistive elements 20, even if the diaphragm portion 1 Oa is very thin. Because the thin silicon diaphragm portion 1 0a is sandwiched between the two passivation layers 40 and 70 of silicon dioxide, the respective residual stresses are mutually eliminated by each other. A passivation layer 40 without defects such as pin-holes can thus be formed on the silicon diaphragm assembly 10.
Another advantage is that, since the silicon diaphragm assembly 10, in particular the thin diaphragm portion 10a thereof, is covered with the passivation layers 40 and 70, the silicon diaphragm assembly 10 can be protected from corruption if it is used in an active atmosphere of sulfurous acid gas. The silicon diaphragm assembly 10 of such structure, therefore, can be kept and used in a stable condition for long time.
In the embodiment described above, although an absolute pressure transducer is explained, in which a vacuum is provided on one side surface of the thin diaphragm portion 1 Oa of the silicon diaphragm assembly 10, the present invention can be applied to similar effect to a differential pressure transducer which has a pressure reference. Further, it is also obvious that silicon nitride (SiN) can be used as the passivation layers instead of silicon dioxide mentioned above.
Referring to Fig. 2, in a ceramic substrate 111, is formed a groove 11 2 in which the semiconductor pressure transducer assembly 100 is positioned, the bottom of the transducer assembly being connected to the bottom of the groove with resilient adhesive 11 3.
On an upper surface of the ceramic substrate 111, electrodes 114 are prepared at the edges of the groove 11 2, and the electrodes 114 are connected through conductive wires 11 5 such as of gold (Au) to the electrodes of the semiconductor pressure transducer assembly 100. A plastic covering member 11 6 having a pressure inlet is mounted on the upper surface of the ceramic substrate 111, covering the semiconductor pressure transducer assembly 100 and the electrodes 11 4 thereon. On the remaining part of the surface of the ceramic substrate 111, an operational amplifier 11 7 is provided for amplifying an electric signal up to a desired signal level.
Further, the ceramic substrate 111 has plural lead frames 11 8 fixed at the both sides thereof and film electrodes are formed thereon for electrical connections between the semiconductor pressure transducer assembly 100, the operational amplifier 11 7 and the lead frames. The film electrodes are not shown in
Fig. 2.
The operation of the apparatus mentioned above will now be described briefly with reference to Figs. 1 and 2. If a pressure to be detected is applied in the direction indicated by an arrow in Fig. 2, the pressure is led onto the thin diaphragm portion 1 Oa of the silicon diaphragm assembly 10, and is transduced into an electric signal by the function of the piezoresistive strain gauge elements 20 thereon. This electric signal is led through the electrodes 30, the conductive wires 11 5 and the electrodes 114 to the amplifier 117, and then the amplified electric signal is led out from the lead frames 11 8.
This apparatus could be used in an autombile as described in the introduction.
Claims (10)
1. A semiconductor pressure transducer assembly for transducing pressure to electric signal, comprising: a silicon diaphragm assembly having a thin pressure sensitive portion; piezoresistive elements diffused on one surface of said silicon diaphragm assembly, the resistance value of the piezoresistive elements varying depending on the strains appearing in the thin pressure sensitive portion
in response to the pressure applied thereto;
and a passivation layer of insulator lying on
the surface of the silicon diaphragm assembly
on which surface said piezoresistive elements
are diffused, wherein on the other surface of
said silicon diaphragm assembly is formed a
layer for eliminating stresses caused in the
thin pressure sensitive portion due to the
thermal expansion difference between said sil icon diaphragm assembly and said passivation
layer.
2. A semiconductor pressure transducer
assembly according to claim 1, wherein a
groove is etched from the bottom of said
silicon diaphragm assembly for defining the
thin pressure sensitive portion and a thick
supporting portion therefor, and said stress
eliminating layer is formed on an inner surface
of said groove.
3. A semiconductor pressure transducer
assembly according to claim 1 or claim 2
wherein the passivation layer and the stress
eliminating layer are of the same material.
4. A semiconductor pressure transducer
assembly according to claim 3, wherein said
passivation layer and said stress eliminating
layer are formed of silicon dioxide.
5. A semiconductor pressure transducer
assembly according to claim 3, wherein said passivation layer and said stress eliminating
layer are formed of silicon nitride.
6. A semiconductor pressure transducer
assembly according to any one of the preced
ing claims, wherein said passivation layer and
said stress eliminating layer are formed in
thicknesses equal to each other.
7. A semiconductor pressure transducer
assembly for transducing pressure to electric
signal, substantially as described herein with preference to Fig. 1 of the accompanying draw
ings.
8. Pressure sensor apparatus incorporating
a semiconductor transducer element according
to any one of the preceding claims.
9. Pressure sensor apparatus substantially
as described herein with reference to Fig. 2 of
the accompanying drawings.
10. An automobile fitted with pressure
sensor apparatus according to claim 8 or claim 9.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12254078A JPS5550668A (en) | 1978-10-06 | 1978-10-06 | Semiconductor pressure converter |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB2034970A true GB2034970A (en) | 1980-06-11 |
Family
ID=14838386
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB7934401A Withdrawn GB2034970A (en) | 1978-10-06 | 1979-10-04 | Semiconductor pressure transducer |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPS5550668A (en) |
| AU (1) | AU5117679A (en) |
| DE (1) | DE2940497A1 (en) |
| FR (1) | FR2438264A1 (en) |
| GB (1) | GB2034970A (en) |
| IT (1) | IT7926278A0 (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2229816A (en) * | 1989-03-31 | 1990-10-03 | Stc Plc | Resonating element differential pressure sensor |
| GB2265754A (en) * | 1992-03-30 | 1993-10-06 | Awa Microelectronics | Beam structure in silicon devices |
| AU660358B2 (en) * | 1992-03-30 | 1995-06-22 | Awa Microelectronics Pty Limited | Silicon transducer |
| WO2003095963A2 (en) * | 2002-05-06 | 2003-11-20 | Rosemount, Inc. | Barometric pressure sensor |
| US10156489B2 (en) * | 2016-02-02 | 2018-12-18 | Asia Pacific Microsystems, Inc. | Piezoresistive pressure sensor |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57142533A (en) * | 1981-02-27 | 1982-09-03 | Mitsubishi Electric Corp | Pressure sensor |
| JPS6056244U (en) * | 1983-09-26 | 1985-04-19 | 住友電気工業株式会社 | semiconductor pressure sensor |
| JPS60149369A (en) * | 1984-01-14 | 1985-08-06 | Hitoshi Nagaoka | Mycelial extract of ganoderma lucidum and production thereof |
| JPH0465643A (en) * | 1990-07-05 | 1992-03-02 | Mitsubishi Electric Corp | Semiconductor pressure sensor and its manufacture |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL162254B (en) * | 1968-11-29 | 1979-11-15 | Philips Nv | SEMI-CONDUCTOR DEVICE FOR CONVERSION OF MECHANICAL VOLTAGES INTO ELECTRICAL SIGNALS AND METHOD OF MANUFACTURING THIS. |
| US3819431A (en) * | 1971-10-05 | 1974-06-25 | Kulite Semiconductor Products | Method of making transducers employing integral protective coatings and supports |
| JPS5217780A (en) * | 1975-07-04 | 1977-02-09 | Hitachi Ltd | Pressure convertor with semi-conductor elements |
| JPS52127257A (en) * | 1976-04-19 | 1977-10-25 | Hitachi Ltd | Displacement converter |
-
1978
- 1978-10-06 JP JP12254078A patent/JPS5550668A/en active Pending
-
1979
- 1979-09-25 AU AU51176/79A patent/AU5117679A/en not_active Abandoned
- 1979-10-04 GB GB7934401A patent/GB2034970A/en not_active Withdrawn
- 1979-10-04 FR FR7924695A patent/FR2438264A1/en not_active Withdrawn
- 1979-10-05 IT IT7926278A patent/IT7926278A0/en unknown
- 1979-10-05 DE DE19792940497 patent/DE2940497A1/en not_active Withdrawn
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2229816A (en) * | 1989-03-31 | 1990-10-03 | Stc Plc | Resonating element differential pressure sensor |
| GB2229816B (en) * | 1989-03-31 | 1992-11-18 | Stc Plc | Pressure sensor |
| GB2265754A (en) * | 1992-03-30 | 1993-10-06 | Awa Microelectronics | Beam structure in silicon devices |
| AU660358B2 (en) * | 1992-03-30 | 1995-06-22 | Awa Microelectronics Pty Limited | Silicon transducer |
| GB2265754B (en) * | 1992-03-30 | 1995-10-25 | Awa Microelectronics | Silicon transducer |
| US5682053A (en) * | 1992-03-30 | 1997-10-28 | Awa Microelectronics Pty. Limited | Silicon transducer with composite beam |
| WO2003095963A2 (en) * | 2002-05-06 | 2003-11-20 | Rosemount, Inc. | Barometric pressure sensor |
| WO2003095963A3 (en) * | 2002-05-06 | 2004-04-01 | Rosemount Inc | Barometric pressure sensor |
| US10156489B2 (en) * | 2016-02-02 | 2018-12-18 | Asia Pacific Microsystems, Inc. | Piezoresistive pressure sensor |
Also Published As
| Publication number | Publication date |
|---|---|
| DE2940497A1 (en) | 1980-04-10 |
| FR2438264A1 (en) | 1980-04-30 |
| AU5117679A (en) | 1980-04-17 |
| JPS5550668A (en) | 1980-04-12 |
| IT7926278A0 (en) | 1979-10-05 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| WAP | Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1) |