GB2229816A - Resonating element differential pressure sensor - Google Patents

Resonating element differential pressure sensor Download PDF

Info

Publication number
GB2229816A
GB2229816A GB8907285A GB8907285A GB2229816A GB 2229816 A GB2229816 A GB 2229816A GB 8907285 A GB8907285 A GB 8907285A GB 8907285 A GB8907285 A GB 8907285A GB 2229816 A GB2229816 A GB 2229816A
Authority
GB
United Kingdom
Prior art keywords
pressure sensor
diaphragm
sensor
trough
differential
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB8907285A
Other versions
GB2229816B (en
GB8907285D0 (en
Inventor
John Christopher Greenwood
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
STC PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STC PLC filed Critical STC PLC
Priority to GB8907285A priority Critical patent/GB2229816B/en
Publication of GB8907285D0 publication Critical patent/GB8907285D0/en
Publication of GB2229816A publication Critical patent/GB2229816A/en
Application granted granted Critical
Publication of GB2229816B publication Critical patent/GB2229816B/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0001Transmitting or indicating the displacement of elastically deformable gauges by electric, electro-mechanical, magnetic or electro-magnetic means
    • G01L9/0008Transmitting or indicating the displacement of elastically deformable gauges by electric, electro-mechanical, magnetic or electro-magnetic means using vibrations
    • G01L9/0019Transmitting or indicating the displacement of elastically deformable gauges by electric, electro-mechanical, magnetic or electro-magnetic means using vibrations of a semiconductive element

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Measuring Fluid Pressure (AREA)

Abstract

A differential pressure sensor comprises a pair of single crystal diaphragms 11, 12 bonded together by adhesive 13. One diaphragm 12 has a ridged portion which defines a cavity 53 in which a resonant sensor device 16 is disposed. Flexure of the diaphragms in response to an applied pressure differential causes corresponding changes in the resonator frequency. The sensor may be used as the differential pressure sensing element of a fluid flowmeter e.g. for oil or gas flow measurement under high pressure conditions. The sensor device 16 consists of a pair of paddles 161 on a filament 162 and it is driven into resonance electrostatically from electrodes on one of the diaphragms 11. A fabrication sequence for the sensor is also disclosed. <IMAGE>

Description

PRESSURE SENSOR This invention relates to pressure sensors, and in particular to devices for differential pressure measurement. The invention also relates to a method of fabricating such a device.
There is an increasing requirement in industrial applications for differential pressure measurement. Typically it is necessary to measure pressure differentials of a few pascals under a background pressure of 1000 atmospheres or more.
Conditions of this nature are experienced when attempting to measure flow rates of fluids, e.g. oil or gas under high pressure or well-head conditions.
Currently available devices capable of performing this function are complex and relatively costly.
The object of the invention is to minimise or to overcome this disadvantage.
According to the invention there is provided a differential pressure sensor, including first and second resilient diaphragm members one of which is provided with a trough within which a strain sensor element is disposed, wherein said diaphragm members are bonded together whereby said trough defines a cavity between the diaphragm members, the arrangement being such that distortion of the diaphragm members in response to a pressure differential apply, a corresponding strain to the sensor element.
According to the invention there is further provided a differential pressure sensor, including first and second resilient diaphragm member one of which is provided with a trough, a resonator element mounted on a taut filament suspension access the trough, the resonant frequency of the element being determined by a tension within the filament suspension, and means for driving and interrogating said resonator element, wherein said diaphragm members are bonded together whereby said trough defines a cavity between the diaphragm members, the arrangement being such that distortion of the diaphragm members in response to a pressure differential applied thereto causes a corresponding change in the tension in said filament suspension thereby causing a change in the resonant frequency of the resonator element indicative of the magnitude of the pressure differential.
The arrangement is such that the pressure sensing element is shielded from direct exposure to external pressures.
An embodiment of the invention will now be described with reference to the corresponding drawings in which: Fig. 1 is a general view of the differential pressure sensor; Figs. 2 and 3 are cross-sectional views of the sensor of Fig. 1.
Fig. 4 illustrates the construction of the sensor diaphragm of the pressure sensor of Fig. 1.
Fig. 5 illustrates the construction of the other diaphragm of the pressure sensor; and Figs. 6 to 8 illustrate process steps in the fabrication of the differential process sensor.
Referring to Figs. 1 to 5, the pressure sensor is formed from two resilient diaphragm members 11, 12 bonded together e.g. by a layer. 13 of an adhesive.
Typically the members 11 and 12 are formed from single crystal silicon. One of the diaphragm members (11) is generally flat whilst the other (12) has a trough or ridge portion 14 which, when the diaphragm members are bonded together, defines a cavity 15 therebetween.
Advantageously, the cavity 15 is evacuated to minimise damping of the resonator and thus enhance the sensitivity of the device.
A resonator sensor element 16 is disposed within the cavity 15 and is integral with the second diaphragm member 12. The resonator element 16 is thus protected from externally applied pressure. Typically the resonator 16 consists of a pair of balanced paddles 161 supported on a taut filament 162 bridging the trough 13. The resonator element 16 may be driven at its resonant frequency by electrostatic coupling to the twopaddle members 161. For this purpose, the first diaphragm member 11 is provided on its inwardly facing surface with a pair of metallised conductor tracks 51 (Fig. 5) each of which terminates at a corresponding electrode 52. The arrangement is such that, when the two diaphragm members are assembled together, each electrode 52 is in register with a corresponding paddle member 161 of the resonator 16.
In a typical sensor construction, the diaphragm member 11 and 12 are mounted between a pair of coaxially arranged tubes 71, 72 (Fig. 8) via which a pressure differential is applied to the diaphragm members.
Flexure of the diaphragm assembly in response to a difference in applied pressure between the outer faces of the diaphragm causes a corresponding change in tension in the filament 162. This results in a corresponding change in the resonator frequency indicative of that pressure difference. The response of the diaphragm assembly to an applied pressure differential is determined by the elastic modulus of the diaphragm material and by the area and thickness of each diaphragm. The manner in which diaphragm displacement may be calculated will be apparent to those skilled in the art.
It will be understood that whilst a resonator element has been described as the displacement sensing device, other means of sensing displacement of the diaphragm assembly may also be employed.
Referring now to Fig. 6 a typical fabrication sequence for the sensor of Figs. 1 to 5 will be described. A wafer 51 (Fig.6) of single crystal silicon is masked and selectively etched to define a trough 52 in one face of the wafer. A patterned region corresponding to the resonator element is provided with a etch stop, e.g. by boron doping. Material is thus etched away to leave the resonator element 16 bridging the trough 52. The silicon may be aetched with a mixture of aqueous potassium hydroxide and isopropanol, a mixture of ethylene diamine and catechol, or hydrazine hydrate. These etches cut anisotropically in a precise direction relative to the crystal planes.In particular, anisotropic etching of a ElOO) single crystal silicon surface proceed at an angle of 350 1 12 12 from the normal to the plane of the surface.
Thus, the depth of a trough formed in such a surface may be accurately determined from the lateral dimensions of the mask from which the trough is defined.
The other face of the wafer 51 is then masked and selectively etched to remove material reducing the thickness of the wafer and to define a ridge 61 in register with the trough 52. The ridge may be formed by anisotropic etching in a similar manner to the formation of the trough. In some applications the ridge and trough may be etched simultaneously.
The etched structure is secured (Fig. 8) with a layer 13 of adhesive, e.g. an epoxy resin, to a second thinned wafer 71. The cavity defined by the trough 51 may be evacuated during this assembly. Finally the diaphragm assembly is mounted between a pair of tubular members 71, 72 to form the finished device. It will be appreciated that in a typical fabrication process a plurality of devices are formed on a common silicon substrate wafer, which is then subdivided after the device fabrication process has been completed.
The differential pressure sensor described above may be employed in a variety of pressure sensing applications. It is however of particular use on a differential pressure sensing element of a fluid flowmeter e.g. for the measurement of gas or oil flow rates under high pressure conditions. In such an instrument an obstruction, typically an orifice plate, is placed in the fluid flow. Flow rate is then determined from the pressure differential between the upstream and downstream sides of the obstruction.

Claims (7)

1. A differential pressure sensor, including first and second resilient diaphragm members one of which is provided with a trough within which a strain sensor element is disposed, wherein said diaphragm members are bonded together whereby said trough defines a cavity between the diaphragm members, the arrangement being such that distortion of the diaphragm members in response to a pressure differential apply, a corresponding strain to the sensor element.
2. A differential pressure sensor, including first and second resilient diaphragm member one of which is provided with a trough, a resonator element mounted on a taut filament suspension access the trough, the resonant frequency of the element being determined by a tension within the filament suspension, and means for driving and interrogating said resonator element, wherein said diaphragm members are bonded together whereby said trough defines a cavity between the diaphragm members, the arrangement being such that distortion of the diaphragm members in response to a pressure differential applied thereto causes a corresponding change in the tension in said filament suspension thereby causing a change in the resonant frequency of the resonator element indicative of the magnitude of the pressure differential.
3. A pressure sensor as claimed in claim 1 or 2, wherein said diaphragm members each comprise a body of single crystal silicon.
4. A pressure sensor as claimed in claim 3, wherein said resonator element us integral with the second diaphragm member.
5. A pressure sensor as described in claim 1, 2, 3 or 4, wherein said cavity is evacuated.
6. A differential pressure sensor substantially as described herein with reference to and as shown in the accompanying drawings.
7. A fluid flowmeter incorporating a differential pressure sensor as claimed in any one of the preceding claims.
GB8907285A 1989-03-31 1989-03-31 Pressure sensor Expired - Lifetime GB2229816B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB8907285A GB2229816B (en) 1989-03-31 1989-03-31 Pressure sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB8907285A GB2229816B (en) 1989-03-31 1989-03-31 Pressure sensor

Publications (3)

Publication Number Publication Date
GB8907285D0 GB8907285D0 (en) 1989-05-17
GB2229816A true GB2229816A (en) 1990-10-03
GB2229816B GB2229816B (en) 1992-11-18

Family

ID=10654247

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8907285A Expired - Lifetime GB2229816B (en) 1989-03-31 1989-03-31 Pressure sensor

Country Status (1)

Country Link
GB (1) GB2229816B (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2235773A (en) * 1989-08-30 1991-03-13 Schlumberger Ind Ltd Indirectly excited resonant element sensor
US5105665A (en) * 1989-08-30 1992-04-21 Schlumberger Industries Limited Sensors
WO2007040929A1 (en) * 2005-09-30 2007-04-12 General Electric Company System and method for sensing differential pressure
WO2010135048A1 (en) 2009-05-21 2010-11-25 Ge Infrastructure Sensing, Inc. Sensor

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2034970A (en) * 1978-10-06 1980-06-11 Hitachi Ltd Semiconductor pressure transducer
EP0111640A2 (en) * 1982-09-20 1984-06-27 Hitachi, Ltd. Pressure sensor with semi-conductor diaphragm
WO1988001049A1 (en) * 1986-07-28 1988-02-11 Rosemount Inc. Media isolated differential pressure sensors

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2034970A (en) * 1978-10-06 1980-06-11 Hitachi Ltd Semiconductor pressure transducer
EP0111640A2 (en) * 1982-09-20 1984-06-27 Hitachi, Ltd. Pressure sensor with semi-conductor diaphragm
WO1988001049A1 (en) * 1986-07-28 1988-02-11 Rosemount Inc. Media isolated differential pressure sensors

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2235773A (en) * 1989-08-30 1991-03-13 Schlumberger Ind Ltd Indirectly excited resonant element sensor
US5105665A (en) * 1989-08-30 1992-04-21 Schlumberger Industries Limited Sensors
GB2235773B (en) * 1989-08-30 1993-12-22 Schlumberger Ind Ltd Sensors
WO2007040929A1 (en) * 2005-09-30 2007-04-12 General Electric Company System and method for sensing differential pressure
US7490519B2 (en) 2005-09-30 2009-02-17 General Electric Company System and method for sensing differential pressure
WO2010135048A1 (en) 2009-05-21 2010-11-25 Ge Infrastructure Sensing, Inc. Sensor
EP2433104A1 (en) * 2009-05-21 2012-03-28 GE Infrastructure Sensing, Inc. Sensor
CN102439407A (en) * 2009-05-21 2012-05-02 通用电气基础设施传感公司 Sensor
EP2433104A4 (en) * 2009-05-21 2012-10-17 Ge Infrastructure Sensing Inc Sensor
GB2470399B (en) * 2009-05-21 2013-11-27 Ge Infrastructure Sensing Inc A sensor arranged to measure more than one characteristic of a fluid
CN102439407B (en) * 2009-05-21 2014-12-24 通用电气基础设施传感公司 Sensor
US9784630B2 (en) 2009-05-21 2017-10-10 Ge Infrastructure Sensing, Inc. Sensor

Also Published As

Publication number Publication date
GB2229816B (en) 1992-11-18
GB8907285D0 (en) 1989-05-17

Similar Documents

Publication Publication Date Title
US7508040B2 (en) Micro electrical mechanical systems pressure sensor
US5165289A (en) Resonant mechanical sensor
US5209118A (en) Semiconductor transducer or actuator utilizing corrugated supports
US5064165A (en) Semiconductor transducer or actuator utilizing corrugated supports
EP1155297B1 (en) Resonant sensor
US5177579A (en) Semiconductor transducer or actuator utilizing corrugated supports
US6662658B2 (en) Whiffletree accelerometer
CN108931321B (en) Beam-island-membrane integrated resonant pressure sensor structure and manufacturing method thereof
EP3674258B1 (en) Resonator and method of manufacturing the resonator, and strain sensor and sensor array including the resonator
US5447601A (en) Method of manufacturing a motion sensor
KR20010082299A (en) Integral stress isolation apparatus and technique for semiconductor devices
US20060123907A1 (en) Pyramid socket suspension
EP0672898B1 (en) Semiconductor pressure sensor with polysilicon diaphragm and single-crystal gage elements and fabrication method therefor
US20170350779A1 (en) Micromachined Bulk Acoustic Wave Resonator Pressure Sensor
US8878316B2 (en) Cap side bonding structure for backside absolute pressure sensors
US20040025589A1 (en) Micromechanical component
JP2006170984A (en) System and method for detecting pressure
Christel et al. Single-crysytal silicon pressure sensors with 500× overpressure protection
GB2229816A (en) Resonating element differential pressure sensor
CN107101629A (en) A kind of silicon micro mechanical graphene beam resonant mode gyroscope
JPH0554709B2 (en)
WO2001000523A9 (en) Micro-electromechanical devices and methods of manufacture
JP2001004470A (en) Semiconductor pressure sensor
JP2770488B2 (en) Semiconductor pressure gauge
JP2011085407A (en) Vibrating pressure sensor

Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19930331