JP2770488B2 - Semiconductor pressure gauge - Google Patents
Semiconductor pressure gaugeInfo
- Publication number
- JP2770488B2 JP2770488B2 JP1269984A JP26998489A JP2770488B2 JP 2770488 B2 JP2770488 B2 JP 2770488B2 JP 1269984 A JP1269984 A JP 1269984A JP 26998489 A JP26998489 A JP 26998489A JP 2770488 B2 JP2770488 B2 JP 2770488B2
- Authority
- JP
- Japan
- Prior art keywords
- measurement
- measurement diaphragm
- diaphragm
- detection sensor
- strain detection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Measuring Fluid Pressure (AREA)
Description
【発明の詳細な説明】 ＜産業上の利用分野＞ 本発明は、小形化が容易で、感度の良好な半導体圧力
計に関するものである。Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor pressure gauge that can be easily miniaturized and has good sensitivity.
＜従来の技術＞ 第６図は従来より一般に使用されている従来例の要部
構成説明図で、例えば、本願出願人の出願した、特願昭
62−166176号、発明の名称「振動形トランスデュサの製
造方法」、昭和62年７月２日出願に示されている。<Prior Art> FIG. 6 is an explanatory view of a main part of a conventional example generally used in the prior art. For example, Japanese Patent Application No.
No. 62-166176, entitled "Method of Manufacturing Vibrating Transducer", filed on July 2, 1987.
図において、 １は半導体単結晶基板で、２は半導体基板１に設けら
れ測定圧Pmを受圧する測定ダイアフラムである。In the figure, 1 is a semiconductor single crystal substrate, and 2 is a measurement diaphragm provided on the semiconductor substrate 1 and receiving a measurement pressure Pm.
３は測定ダイアフラム２に埋込み設けられた歪み検出
センサで、この場合は、振動子３が使用されている。Reference numeral 3 denotes a strain detection sensor embedded in the measurement diaphragm 2, and in this case, the vibrator 3 is used.
４は封止用の半導体エピタキシャル成長層からなるシ
ェルで、振動子３を測定ダイアフラム２に封止する。Reference numeral 4 denotes a shell made of a semiconductor epitaxial growth layer for sealing, and seals the vibrator 3 with the measurement diaphragm 2.
振動子３と、測定ダイアフラム２とエピタキシャル成
長層４との間には真空室５が設けられている。A vacuum chamber 5 is provided between the oscillator 3, the measurement diaphragm 2 and the epitaxial growth layer 4.
振動子３は、永久磁石による磁場と、振動子３に接続
された閉ループ自励発振回路とにより、振動子３の固有
振動で発振するように構成されている。The vibrator 3 is configured to oscillate with a natural vibration of the vibrator 3 by a magnetic field generated by a permanent magnet and a closed-loop self-excited oscillation circuit connected to the vibrator 3.
以上の構成において、測定ダイアフラム２に測定圧力
Pmが加わると、振動子３の軸力が変化し、固有振動数が
変化するため、発振周波数の変化により測定圧力Pmの測
定が出来る。In the above configuration, the measurement pressure is applied to the measurement diaphragm 2.
When Pm is applied, the axial force of the vibrator 3 changes, and the natural frequency changes. Therefore, the measurement pressure Pm can be measured by changing the oscillation frequency.
＜発明が解決しようとする課題＞ しかしながら、この様な装置においては、 （１）振動子３を、外部の測定流体の影響を無くすため
に、シェル４内に形成する。<Problems to be Solved by the Invention> However, in such an apparatus, (1) the vibrator 3 is formed in the shell 4 in order to eliminate the influence of the external measurement fluid.
（２）振動子３の振動特性を上げるために、シェル４内
を真空にする。(2) The inside of the shell 4 is evacuated to improve the vibration characteristics of the vibrator 3.
この為、振動子３は測定ダイアフラム２の表面には無
く、第７図に示す如く、一定の深さd0の位置にある。Therefore, the oscillator 3 is not on the surface of the measuring diaphragm 2, as shown in FIG. 7, in the position of the predetermined depth d 0.
一方、測定ダイアフラム２に測定圧が加わり、変形し
た場合の、測定ダイアフラム２の歪み分布は、第８図に
示す如くなり、測定ダイアフラム２の表面が最も大き
く、中立面では零となる。On the other hand, when a measurement pressure is applied to the measurement diaphragm 2 and the measurement diaphragm 2 is deformed, the strain distribution of the measurement diaphragm 2 is as shown in FIG. 8, and the surface of the measurement diaphragm 2 is the largest and zero on the neutral plane.
測定圧力Pmが小さくなると、測定ダイアフラム２を大
きくするか、板厚を薄くして、歪みを大きくする必要が
ある。When the measurement pressure Pm decreases, it is necessary to increase the measurement diaphragm 2 or reduce the plate thickness to increase the distortion.
装置の小形化を図るには、測定ダイアフラム２の板厚
を小さくするしか無いが、測定ダイアフラム２の板厚t0
を小さくするのに従い、振動子３の受ける歪みは小さく
なり、t0＝2d0となると、歪み感度がなくなってしま
う。The only way to reduce the size of the device is to reduce the thickness of the measurement diaphragm 2, but the thickness t 0 of the measurement diaphragm 2 is small.
Becomes smaller, the distortion received by the vibrator 3 becomes smaller, and when t 0 = 2d 0 , the distortion sensitivity is lost.
本発明は、この問題点を解決するものである。 The present invention solves this problem.
本発明の目的は、小形化が容易で、感度が良好な半導
体圧力計を提供するにある。An object of the present invention is to provide a semiconductor pressure gauge that can be easily miniaturized and has good sensitivity.
＜課題を解決するための手段＞ この目的を達成するために、本発明は、半導体基板
と、該半導体基板に設けられ測定圧力を受圧する測定ダ
イアフラムと、該測定ダイアフラムに埋込み設けられた
歪検出センサとを具備する半導体圧力において、 前記測定ダイアフラムの前記歪検出センサが配置され
ている位置に設けられ該歪検出センサを含み該測定ダイ
アフラムの面に直交方向に該歪検出センサの配置位置が
相対的に中立面より表面に近くなるような厚さを有し該
歪検出センサの歪検出方向と同一方向に前記測定ダイア
フラムの一端縁から他端縁にわたって設けられた厚肉部
を具備したことを特徴とする半導体圧力計を構成したも
のである。<Means for Solving the Problems> In order to achieve this object, the present invention provides a semiconductor substrate, a measurement diaphragm provided on the semiconductor substrate for receiving a measurement pressure, and a strain detection embedded in the measurement diaphragm. In the semiconductor pressure including the sensor, the measurement diaphragm is provided at a position where the strain detection sensor is disposed, and includes the distortion detection sensor, and the arrangement position of the distortion detection sensor is perpendicular to a surface of the measurement diaphragm. A thick portion provided so as to be closer to the surface than the neutral surface and provided from one end to the other end of the measurement diaphragm in the same direction as the strain detection direction of the strain detection sensor. A semiconductor pressure gauge characterized by the following.
＜作用＞ 以上の構成において、測定ダイアフラムに測定圧力が
加わると、測定圧力が歪み検出センサによって検出さ
れ、測定圧力に対応した電気信号出力が得られる。<Operation> In the above configuration, when a measurement pressure is applied to the measurement diaphragm, the measurement pressure is detected by the strain detection sensor, and an electric signal output corresponding to the measurement pressure is obtained.
而して、歪み検出センサの部分のみ測定ダイアフラム
の厚さを厚くしたので、歪み検出センサは測定ダイアフ
ラムの板厚の中立面より表面に近くなり、歪み検出セン
サに生ずる歪みを大きく出来る。Since the thickness of the measurement diaphragm is increased only in the portion of the distortion detection sensor, the distortion detection sensor is closer to the surface than the neutral plane of the thickness of the measurement diaphragm, and the distortion generated in the distortion detection sensor can be increased.
かつ、厚肉部は、測定ダイアフラムの一部分にしか無
く、大部分は薄肉部であるため、小さな測定圧でも、充
分な測定ダイアフラムの変化を得る事が出来る。In addition, since the thick portion is present only in a part of the measurement diaphragm and most of the thickness is the thin portion, a sufficient change in the measurement diaphragm can be obtained even with a small measurement pressure.
従って、充分な測定感度を得る事が出来る。 Therefore, sufficient measurement sensitivity can be obtained.
以下、実施例に基づき詳細に説明する。 Hereinafter, a detailed description will be given based on embodiments.
＜実施例＞ 第１図は本発明の一実施例の要部構成説明図、第２図
は第１図のＡ−Ａ断面図である。<Embodiment> FIG. 1 is an explanatory view of a main part configuration of an embodiment of the present invention, and FIG. 2 is a sectional view taken along line AA of FIG.
図において、第６図と同一記号の構成は同一機能を表わ
す。In the figure, the configuration of the same symbol as in FIG. 6 represents the same function.
以下、第６図と相違部分のみ説明する。 Hereinafter, only differences from FIG. 6 will be described.
６は歪検出センサ３、この場合は、振動子３が配置さ
れている位置に設けられ、振動子３を含み、測定ダイア
フラム２の面に直交方向に、振動子３の配置位置が相対
的に中立面より表面に近くなるような厚さを有し、振動
子３の歪検出方向と同一方向に、測定ダイアフラム２の
一端縁から他端縁にわたって設けられた厚肉部である。Reference numeral 6 denotes a strain detection sensor 3, which is provided at a position where the vibrator 3 is disposed, includes the vibrator 3, and the position of the vibrator 3 is relatively set in a direction orthogonal to the surface of the measurement diaphragm 2. This is a thick portion having a thickness closer to the surface than the neutral surface and provided from one end to the other end of the measurement diaphragm 2 in the same direction as the strain detection direction of the vibrator 3.
測定ダイアフラム２は、この場合は、四角形状を成し
ている。In this case, the measurement diaphragm 2 has a square shape.
以上の構成において、測定ダイアフラム２に測定圧力
Pmが加わると、振動子３の軸力が変化し、固有振動数が
変化するため、発振周波数の変化により測定圧力Pmの測
定が出来る。In the above configuration, the measurement pressure is applied to the measurement diaphragm 2.
When Pm is applied, the axial force of the vibrator 3 changes, and the natural frequency changes. Therefore, the measurement pressure Pm can be measured by changing the oscillation frequency.
而して、振動子３の部分のみ測定ダイアフラム２の厚
さを厚肉部６により厚くしたので、振動子３は測定ダイ
アフラム２の板厚の中立面より表面に近くなり、振動子
３に生ずる歪みを大きく出来る。Since the thickness of the measurement diaphragm 2 is increased by the thick portion 6 only in the portion of the vibrator 3, the vibrator 3 is closer to the surface than the neutral surface of the thickness of the measurement diaphragm 2, and The resulting distortion can be increased.
実際に、有限要素法あるいは試作実験の結果による
と、第３図に示す如く、厚肉部６の板厚をｔとし、測定
ダイアフラム２の板厚t0との比と、振動子３の歪みεを
求めると、第４図に示すようになり、t/t0≒３で最大歪
みを得る事が出来る。Actually, according to the results of the finite element method or the prototype test, as shown in FIG. 3, the thickness of the thick portion 6 is represented by t, the ratio of the thickness of the measurement diaphragm 2 to the thickness t 0, and the distortion of the vibrator 3 When ε is obtained, it becomes as shown in FIG. 4, and the maximum distortion can be obtained when t / t 0 ≒ 3.
この結果、充分な測定感度を得る事が出来る。 As a result, sufficient measurement sensitivity can be obtained.
即ち、薄肉の測定ダイアフラム２の歪み検出センサ部
分に、歪検出方向と同一方向に厚肉部分６を設ける事に
より、表面より一定の深さd0に固定制約されてしまう、
歪み検出センサ３の検出歪みを大きくする事が出来る。That is, the strain detection sensor portion of the measuring diaphragm 2 thin, by providing the thick part 6 on the strain sensing the same direction, thereby being fixed constrained to a certain depth d 0 from the surface,
The distortion detected by the distortion detection sensor 3 can be increased.
従って、特に、低圧の測定圧力を測定する測定ダイア
フラム２の場合に、厚肉部６以外の測定ダイアフラム２
の肉厚を、歪み検出センサ３の表面よりの深さd0に関係
なく薄くする事が出来、低圧測定用の場合においても、
小形で高感度の半導体圧力計が実現出来る。Therefore, especially in the case of the measurement diaphragm 2 for measuring a low measurement pressure, the measurement diaphragm 2 other than the thick portion 6
The thickness of, it is possible to reduce the thickness regardless of the depth d 0 of the surface of the strain detection sensor 3, even in the case of low pressure measurement,
A small and highly sensitive semiconductor pressure gauge can be realized.
第５図は本発明の他の実施例の要部構成説明図であ
る。FIG. 5 is an explanatory view of a main part configuration of another embodiment of the present invention.
本実施例においては、測定ダイアフラム２を円形とし
たものである。In the present embodiment, the measurement diaphragm 2 is circular.
なお、前述の実施例においては、歪み検出センサとし
ては、振動子３であるものについて説明したが、これに
限ることはなく、例えば、拡散抵抗式歪みゲージにおい
て、表面に保護膜を設け測定ダイアフラムに埋込形成し
たものでもよく、要するに、歪み検出センサが測定ダイ
アフラム２に埋込構成されたものであればよい。In the above-described embodiment, a description has been given of the case where the transducer 3 is the vibrator 3 as the strain detection sensor. However, the present invention is not limited to this. The strain detection sensor may be embedded in the measurement diaphragm 2 in short.
また、厚肉部６は測定ダイアフラム２の裏面ではな
く、上面に設けられても良いことは勿論である。The thick portion 6 may be provided on the upper surface of the measurement diaphragm 2 instead of the rear surface.
＜発明の効果＞ 以上説明したように、本発明は、半導体基板と、該半
導体基板に設けられ測定圧を受圧する測定ダイアフラム
と、該測定ダイアフラムに埋込み設けられた歪み検出セ
ンサとを具備する半導体圧力計において、 前記測定ダイアフラムの前記歪検出センサが配置され
ている位置に設けられ該歪検出センサを含み該測定ダイ
アフラムの面に直交方向に該歪検出センサの配置位置が
相対的に中立面より表面に近くなるような厚さ有し検出
センサの歪検出方向と同一方向に前記測定ダイアフラム
の一端縁から他端縁にわたって設けられた厚肉部を具備
したことを特徴とする半導体圧力計を構成した。<Effects of the Invention> As described above, the present invention provides a semiconductor including a semiconductor substrate, a measurement diaphragm provided on the semiconductor substrate for receiving a measurement pressure, and a strain detection sensor embedded in the measurement diaphragm. In the pressure gauge, the measurement diaphragm is provided at a position where the strain detection sensor is disposed, and includes the distortion detection sensor, and a position at which the distortion detection sensor is disposed is relatively neutral in a direction orthogonal to a surface of the measurement diaphragm. A semiconductor pressure gauge having a thickness that is closer to the surface and having a thick portion provided from one edge to the other edge of the measurement diaphragm in the same direction as the strain detection direction of the detection sensor. Configured.
この結果、歪検出センサの部分のみ測定ダイアフラム
の厚さを厚肉部により厚くしたので、歪検出センサは測
定ダイアフラムの板厚の中立面より表面にちかくなり、
歪検出センサに生ずる歪を大きく出来る。As a result, the thickness of the measurement diaphragm is increased by the thick portion only in the portion of the strain detection sensor, so the strain detection sensor is closer to the surface than the neutral surface of the measurement diaphragm,
The distortion generated in the distortion detection sensor can be increased.
従って、充分な測定感度を得る事出来る。 Therefore, sufficient measurement sensitivity can be obtained.
即ち、薄肉の測定ダイアフラムの歪検出センサ部分
に、歪検出方向と同一方向に、厚肉部を設ける事によ
り、表面より一定の深さに固定制約されてしまう、歪検
出センサの検出歪を大きくする事が出来る。That is, by providing a thick portion in the strain detection sensor portion of the thin measurement diaphragm in the same direction as the strain detection direction, the strain is fixed and restricted to a certain depth from the surface. You can do it.
而して、特に、低圧の測定圧力を測定する測定ダイア
フラムの場合に、厚肉部以外の測定ダイアフラムの肉厚
を、歪み検出センサの表面よりの深さに関係なく薄くす
る事が出来、低圧測定用の場合においても、小形で高感
度の半導体圧力計が実現出来る。In particular, in the case of a measurement diaphragm that measures a low measurement pressure, the thickness of the measurement diaphragm other than the thick portion can be reduced regardless of the depth from the surface of the strain detection sensor. Even in the case of measurement, a small and highly sensitive semiconductor pressure gauge can be realized.
従って、本発明によれば、小形化が容易で、感度の良
好な半導体圧力計を実現することができる。Therefore, according to the present invention, it is possible to realize a semiconductor pressure gauge that is easily miniaturized and has good sensitivity.
第１図は本発明の一実施例の要部工程説明図、第２図は
第１図のＡ−Ａ断面図、第３図，第４図は第１図の動作
説明図、第５図は本発明の他の実施例の要部構成説明
図、第６図は従来より一般に使用されている従来例の構
成説明図、第７図は第６図の要部拡大図、第８図は第６
図の動作説明図である。 １……基板、３……測定ダイアフラム、３……振動子、
４……シェル、５……真空室、６……厚肉部。FIG. 1 is an explanatory view of a main step of an embodiment of the present invention, FIG. 2 is a sectional view taken along line AA of FIG. 1, FIG. 3 and FIG. FIG. 6 is an explanatory view of a main part of another embodiment of the present invention, FIG. 6 is an explanatory view of a conventional example generally used, FIG. 7 is an enlarged view of the main part of FIG. 6, and FIG. Sixth
It is operation | movement explanatory drawing of a figure. 1 ... substrate, 3 ... measurement diaphragm, 3 ... vibrator,
4 Shell, 5 Vacuum chamber, 6 Thick section.
Claims (1)
フラムと、 該測定ダイアフラムに埋込み設けられた歪検出センサと を具備する半導体圧力において、 前記測定ダイアフラムの前記歪検出センサが配置されて
いる位置に設けられ該歪検出センサを含み該測定ダイア
フラムの面に直交方向に該歪検出センサの配置位置が相
対的に中立面より表面に近くなるような厚さを有し歪検
出センサの歪検出方向と同一方向に前記測定ダイアフラ
ムの一端縁から他端縁にわたって設けられた厚肉部 を具備したことを特徴とする半導体圧力計。1. A semiconductor pressure, comprising: a semiconductor substrate; a measurement diaphragm provided on the semiconductor substrate for receiving a measurement pressure; and a strain detection sensor embedded in the measurement diaphragm, wherein the strain detection of the measurement diaphragm is performed. A sensor is provided at a position where the sensor is disposed, and has a thickness such that the position of the distortion detection sensor is relatively closer to the surface than the neutral plane in a direction perpendicular to the surface of the measurement diaphragm. A semiconductor pressure gauge comprising: a thick portion provided from one end to the other end of the measurement diaphragm in the same direction as the strain detection direction of the strain detection sensor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1269984A JP2770488B2 (en) | 1989-10-17 | 1989-10-17 | Semiconductor pressure gauge |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1269984A JP2770488B2 (en) | 1989-10-17 | 1989-10-17 | Semiconductor pressure gauge |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03131732A JPH03131732A (en) | 1991-06-05 |
| JP2770488B2 true JP2770488B2 (en) | 1998-07-02 |
Family
ID=17479952
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1269984A Expired - Fee Related JP2770488B2 (en) | 1989-10-17 | 1989-10-17 | Semiconductor pressure gauge |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2770488B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010230401A (en) * | 2009-03-26 | 2010-10-14 | Seiko Epson Corp | Pressure sensor |
| JP5880499B2 (en) * | 2013-08-19 | 2016-03-09 | 横河電機株式会社 | Vibration type pressure sensor and manufacturing method thereof |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61172377A (en) * | 1985-01-25 | 1986-08-04 | Toyota Central Res & Dev Lab Inc | Semiconductor pressure sensor |
-
1989
- 1989-10-17 JP JP1269984A patent/JP2770488B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH03131732A (en) | 1991-06-05 |
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