JPS5548926A - Preparation of semiconductor device - Google Patents

Preparation of semiconductor device

Info

Publication number
JPS5548926A
JPS5548926A JP12036578A JP12036578A JPS5548926A JP S5548926 A JPS5548926 A JP S5548926A JP 12036578 A JP12036578 A JP 12036578A JP 12036578 A JP12036578 A JP 12036578A JP S5548926 A JPS5548926 A JP S5548926A
Authority
JP
Japan
Prior art keywords
laser beam
film
ion implantation
laser
protective film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12036578A
Other languages
English (en)
Inventor
Hiroshi Tamura
Masanobu Miyao
Yasuhiro Shiraki
Hisao Nakajima
Takashi Tokuyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP12036578A priority Critical patent/JPS5548926A/ja
Publication of JPS5548926A publication Critical patent/JPS5548926A/ja
Pending legal-status Critical Current

Links

Landscapes

  • Formation Of Insulating Films (AREA)
JP12036578A 1978-10-02 1978-10-02 Preparation of semiconductor device Pending JPS5548926A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12036578A JPS5548926A (en) 1978-10-02 1978-10-02 Preparation of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12036578A JPS5548926A (en) 1978-10-02 1978-10-02 Preparation of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5548926A true JPS5548926A (en) 1980-04-08

Family

ID=14784385

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12036578A Pending JPS5548926A (en) 1978-10-02 1978-10-02 Preparation of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5548926A (ja)

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5754334A (ja) * 1980-09-19 1982-03-31 Matsushita Electric Ind Co Ltd Kibannosentakutekinetsushorihoho
JPS5772989U (ja) * 1980-10-22 1982-05-06
JPS5775433A (en) * 1980-10-28 1982-05-12 Fujitsu Ltd Manufacture of semoconductor device
JPS57122534A (en) * 1981-01-22 1982-07-30 Mitsubishi Electric Corp Manufacture of semiconductor device
JPS58116730A (ja) * 1981-12-30 1983-07-12 Fujitsu Ltd 半導体装置の製造方法
JPS6014444A (ja) * 1983-07-04 1985-01-25 Nec Corp 半導体ウエハ−の選択アニ−ル方法
JPS6014443A (ja) * 1983-07-04 1985-01-25 Nec Corp 半導体ウエハ−のアニ−ル方法
US4523962A (en) * 1982-12-13 1985-06-18 Mitsubishi Denki Kabushiki Kaisha Method for fabricating monocrystalline semiconductor layer on insulating layer by laser crystallization using a grid of anti-reflection coating disposed on poly/amorphous semiconductor
US4543133A (en) * 1983-04-30 1985-09-24 Fujitsu Limited Process for producing single crystalline semiconductor island on insulator
US4545823A (en) * 1983-11-14 1985-10-08 Hewlett-Packard Company Grain boundary confinement in silicon-on-insulator films
US4561906A (en) * 1983-06-16 1985-12-31 Northern Telecom Limited Laser activated polysilicon connections for redundancy
US4565712A (en) * 1980-04-24 1986-01-21 Tokyo Shibaura Denki Kabushiki Kaisha Method of making a semiconductor read only memory
US4875971A (en) * 1987-04-05 1989-10-24 Elron Electronic Industries, Ltd. Fabrication of customized integrated circuits
US5077233A (en) * 1984-10-09 1991-12-31 Fujitsu Limited Method for recrystallizing specified portions of a non-crystalline semiconductor material to fabricate a semiconductor device therein
WO2002101835A1 (fr) * 2001-05-30 2002-12-19 Sony Corporation Procede de fabrication d'un transistor a effet de champ de type porte de canal
JP2009033150A (ja) * 2003-10-03 2009-02-12 Applied Materials Inc 動的表面アニール処理のための吸収層

Cited By (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4565712A (en) * 1980-04-24 1986-01-21 Tokyo Shibaura Denki Kabushiki Kaisha Method of making a semiconductor read only memory
JPS5754334A (ja) * 1980-09-19 1982-03-31 Matsushita Electric Ind Co Ltd Kibannosentakutekinetsushorihoho
JPS5772989U (ja) * 1980-10-22 1982-05-06
JPS5911665Y2 (ja) * 1980-10-22 1984-04-10 株式会社 サンテンダ− カ−テン吊装装置
JPS5775433A (en) * 1980-10-28 1982-05-12 Fujitsu Ltd Manufacture of semoconductor device
JPS57122534A (en) * 1981-01-22 1982-07-30 Mitsubishi Electric Corp Manufacture of semiconductor device
JPS628012B2 (ja) * 1981-01-22 1987-02-20 Mitsubishi Electric Corp
JPS58116730A (ja) * 1981-12-30 1983-07-12 Fujitsu Ltd 半導体装置の製造方法
JPH0156523B2 (ja) * 1981-12-30 1989-11-30 Fujitsu Ltd
US4523962A (en) * 1982-12-13 1985-06-18 Mitsubishi Denki Kabushiki Kaisha Method for fabricating monocrystalline semiconductor layer on insulating layer by laser crystallization using a grid of anti-reflection coating disposed on poly/amorphous semiconductor
US4543133A (en) * 1983-04-30 1985-09-24 Fujitsu Limited Process for producing single crystalline semiconductor island on insulator
US4561906A (en) * 1983-06-16 1985-12-31 Northern Telecom Limited Laser activated polysilicon connections for redundancy
JPS6014443A (ja) * 1983-07-04 1985-01-25 Nec Corp 半導体ウエハ−のアニ−ル方法
JPS6014444A (ja) * 1983-07-04 1985-01-25 Nec Corp 半導体ウエハ−の選択アニ−ル方法
JPH0138368B2 (ja) * 1983-07-04 1989-08-14 Nippon Electric Co
JPH0340937B2 (ja) * 1983-07-04 1991-06-20
US4545823A (en) * 1983-11-14 1985-10-08 Hewlett-Packard Company Grain boundary confinement in silicon-on-insulator films
US5077233A (en) * 1984-10-09 1991-12-31 Fujitsu Limited Method for recrystallizing specified portions of a non-crystalline semiconductor material to fabricate a semiconductor device therein
US4875971A (en) * 1987-04-05 1989-10-24 Elron Electronic Industries, Ltd. Fabrication of customized integrated circuits
WO2002101835A1 (fr) * 2001-05-30 2002-12-19 Sony Corporation Procede de fabrication d'un transistor a effet de champ de type porte de canal
US6927130B2 (en) 2001-05-30 2005-08-09 Sony Corporation Method of manufacturing a trench gate type field effect transistor
JP2009033150A (ja) * 2003-10-03 2009-02-12 Applied Materials Inc 動的表面アニール処理のための吸収層

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