JPS5548926A - Preparation of semiconductor device - Google Patents
Preparation of semiconductor deviceInfo
- Publication number
- JPS5548926A JPS5548926A JP12036578A JP12036578A JPS5548926A JP S5548926 A JPS5548926 A JP S5548926A JP 12036578 A JP12036578 A JP 12036578A JP 12036578 A JP12036578 A JP 12036578A JP S5548926 A JPS5548926 A JP S5548926A
- Authority
- JP
- Japan
- Prior art keywords
- laser beam
- film
- ion implantation
- laser
- protective film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Formation Of Insulating Films (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12036578A JPS5548926A (en) | 1978-10-02 | 1978-10-02 | Preparation of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12036578A JPS5548926A (en) | 1978-10-02 | 1978-10-02 | Preparation of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5548926A true JPS5548926A (en) | 1980-04-08 |
Family
ID=14784385
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12036578A Pending JPS5548926A (en) | 1978-10-02 | 1978-10-02 | Preparation of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5548926A (ja) |
Cited By (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5754334A (ja) * | 1980-09-19 | 1982-03-31 | Matsushita Electric Ind Co Ltd | Kibannosentakutekinetsushorihoho |
JPS5772989U (ja) * | 1980-10-22 | 1982-05-06 | ||
JPS5775433A (en) * | 1980-10-28 | 1982-05-12 | Fujitsu Ltd | Manufacture of semoconductor device |
JPS57122534A (en) * | 1981-01-22 | 1982-07-30 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
JPS58116730A (ja) * | 1981-12-30 | 1983-07-12 | Fujitsu Ltd | 半導体装置の製造方法 |
JPS6014444A (ja) * | 1983-07-04 | 1985-01-25 | Nec Corp | 半導体ウエハ−の選択アニ−ル方法 |
JPS6014443A (ja) * | 1983-07-04 | 1985-01-25 | Nec Corp | 半導体ウエハ−のアニ−ル方法 |
US4523962A (en) * | 1982-12-13 | 1985-06-18 | Mitsubishi Denki Kabushiki Kaisha | Method for fabricating monocrystalline semiconductor layer on insulating layer by laser crystallization using a grid of anti-reflection coating disposed on poly/amorphous semiconductor |
US4543133A (en) * | 1983-04-30 | 1985-09-24 | Fujitsu Limited | Process for producing single crystalline semiconductor island on insulator |
US4545823A (en) * | 1983-11-14 | 1985-10-08 | Hewlett-Packard Company | Grain boundary confinement in silicon-on-insulator films |
US4561906A (en) * | 1983-06-16 | 1985-12-31 | Northern Telecom Limited | Laser activated polysilicon connections for redundancy |
US4565712A (en) * | 1980-04-24 | 1986-01-21 | Tokyo Shibaura Denki Kabushiki Kaisha | Method of making a semiconductor read only memory |
US4875971A (en) * | 1987-04-05 | 1989-10-24 | Elron Electronic Industries, Ltd. | Fabrication of customized integrated circuits |
US5077233A (en) * | 1984-10-09 | 1991-12-31 | Fujitsu Limited | Method for recrystallizing specified portions of a non-crystalline semiconductor material to fabricate a semiconductor device therein |
WO2002101835A1 (fr) * | 2001-05-30 | 2002-12-19 | Sony Corporation | Procede de fabrication d'un transistor a effet de champ de type porte de canal |
JP2009033150A (ja) * | 2003-10-03 | 2009-02-12 | Applied Materials Inc | 動的表面アニール処理のための吸収層 |
-
1978
- 1978-10-02 JP JP12036578A patent/JPS5548926A/ja active Pending
Cited By (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4565712A (en) * | 1980-04-24 | 1986-01-21 | Tokyo Shibaura Denki Kabushiki Kaisha | Method of making a semiconductor read only memory |
JPS5754334A (ja) * | 1980-09-19 | 1982-03-31 | Matsushita Electric Ind Co Ltd | Kibannosentakutekinetsushorihoho |
JPS5772989U (ja) * | 1980-10-22 | 1982-05-06 | ||
JPS5911665Y2 (ja) * | 1980-10-22 | 1984-04-10 | 株式会社 サンテンダ− | カ−テン吊装装置 |
JPS5775433A (en) * | 1980-10-28 | 1982-05-12 | Fujitsu Ltd | Manufacture of semoconductor device |
JPS57122534A (en) * | 1981-01-22 | 1982-07-30 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
JPS628012B2 (ja) * | 1981-01-22 | 1987-02-20 | Mitsubishi Electric Corp | |
JPS58116730A (ja) * | 1981-12-30 | 1983-07-12 | Fujitsu Ltd | 半導体装置の製造方法 |
JPH0156523B2 (ja) * | 1981-12-30 | 1989-11-30 | Fujitsu Ltd | |
US4523962A (en) * | 1982-12-13 | 1985-06-18 | Mitsubishi Denki Kabushiki Kaisha | Method for fabricating monocrystalline semiconductor layer on insulating layer by laser crystallization using a grid of anti-reflection coating disposed on poly/amorphous semiconductor |
US4543133A (en) * | 1983-04-30 | 1985-09-24 | Fujitsu Limited | Process for producing single crystalline semiconductor island on insulator |
US4561906A (en) * | 1983-06-16 | 1985-12-31 | Northern Telecom Limited | Laser activated polysilicon connections for redundancy |
JPS6014443A (ja) * | 1983-07-04 | 1985-01-25 | Nec Corp | 半導体ウエハ−のアニ−ル方法 |
JPS6014444A (ja) * | 1983-07-04 | 1985-01-25 | Nec Corp | 半導体ウエハ−の選択アニ−ル方法 |
JPH0138368B2 (ja) * | 1983-07-04 | 1989-08-14 | Nippon Electric Co | |
JPH0340937B2 (ja) * | 1983-07-04 | 1991-06-20 | ||
US4545823A (en) * | 1983-11-14 | 1985-10-08 | Hewlett-Packard Company | Grain boundary confinement in silicon-on-insulator films |
US5077233A (en) * | 1984-10-09 | 1991-12-31 | Fujitsu Limited | Method for recrystallizing specified portions of a non-crystalline semiconductor material to fabricate a semiconductor device therein |
US4875971A (en) * | 1987-04-05 | 1989-10-24 | Elron Electronic Industries, Ltd. | Fabrication of customized integrated circuits |
WO2002101835A1 (fr) * | 2001-05-30 | 2002-12-19 | Sony Corporation | Procede de fabrication d'un transistor a effet de champ de type porte de canal |
US6927130B2 (en) | 2001-05-30 | 2005-08-09 | Sony Corporation | Method of manufacturing a trench gate type field effect transistor |
JP2009033150A (ja) * | 2003-10-03 | 2009-02-12 | Applied Materials Inc | 動的表面アニール処理のための吸収層 |
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