JPS55165688A - Preparation of light emission semiconductor device - Google Patents
Preparation of light emission semiconductor deviceInfo
- Publication number
- JPS55165688A JPS55165688A JP7336879A JP7336879A JPS55165688A JP S55165688 A JPS55165688 A JP S55165688A JP 7336879 A JP7336879 A JP 7336879A JP 7336879 A JP7336879 A JP 7336879A JP S55165688 A JPS55165688 A JP S55165688A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- light emission
- grown
- type
- value
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000000155 melt Substances 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000007791 liquid phase Substances 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 230000001105 regulatory effect Effects 0.000 abstract 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Led Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7336879A JPS55165688A (en) | 1979-06-11 | 1979-06-11 | Preparation of light emission semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7336879A JPS55165688A (en) | 1979-06-11 | 1979-06-11 | Preparation of light emission semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS55165688A true JPS55165688A (en) | 1980-12-24 |
Family
ID=13516159
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7336879A Pending JPS55165688A (en) | 1979-06-11 | 1979-06-11 | Preparation of light emission semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55165688A (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01244674A (ja) * | 1988-03-26 | 1989-09-29 | Mitsubishi Kasei Corp | 青色発光ダイオードの製造法 |
EP0356037A2 (en) * | 1988-08-26 | 1990-02-28 | Hewlett-Packard Company | Method of making an electro-optical device with inverted transparent substrate |
US4921817A (en) * | 1987-07-09 | 1990-05-01 | Mitsubishi Monsanto Chemical Co. | Substrate for high-intensity led, and method of epitaxially growing same |
US5115286A (en) * | 1988-08-26 | 1992-05-19 | Hewlett-Packard Company | Electro-optical device with inverted transparent substrate and method for making same |
-
1979
- 1979-06-11 JP JP7336879A patent/JPS55165688A/ja active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4921817A (en) * | 1987-07-09 | 1990-05-01 | Mitsubishi Monsanto Chemical Co. | Substrate for high-intensity led, and method of epitaxially growing same |
JPH01244674A (ja) * | 1988-03-26 | 1989-09-29 | Mitsubishi Kasei Corp | 青色発光ダイオードの製造法 |
EP0356037A2 (en) * | 1988-08-26 | 1990-02-28 | Hewlett-Packard Company | Method of making an electro-optical device with inverted transparent substrate |
US5115286A (en) * | 1988-08-26 | 1992-05-19 | Hewlett-Packard Company | Electro-optical device with inverted transparent substrate and method for making same |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5696834A (en) | Compound semiconductor epitaxial wafer and manufacture thereof | |
JPS575325A (en) | Semicondoctor p-n junction device and manufacture thereof | |
JPS55165688A (en) | Preparation of light emission semiconductor device | |
JPS54152878A (en) | Structure of semiconductor laser element and its manufacture | |
JPS55102266A (en) | Fabricating method of semiconductor device | |
JPS55165689A (en) | Preparation of light emission semiconductor device | |
JPS54152879A (en) | Structure of semiconductor laser element and its manufacture | |
JPS5336182A (en) | Thin semiconductor single crystal film forming insulation substrate | |
JPS5724591A (en) | Manufacture of semiconductor laser device | |
JPS58196057A (ja) | 半導体装置 | |
JPS6362235A (ja) | 半導体の蝕刻方法 | |
JPS574115A (en) | Manufacture of junction of semiconductors | |
JPS6439018A (en) | Intermetallic compound semiconductor thin film and manufacture thereof | |
JPS5724580A (en) | Manufacture of infrared ray detecting element | |
JPS5621386A (en) | Manufacture of luminous element | |
JPS5740939A (en) | P-n junction formation | |
JPS5534482A (en) | Manufacturing method for semiconductor laser | |
JPS62208Y2 (ja) | ||
JPS5623737A (en) | Manufacture of buried type semiconductor element substrate | |
JPS56105625A (en) | Manufacture of compound semiconductor thin film single crystal of high ratio resistance and low transition density | |
JPS57196521A (en) | Growing method of crystal | |
JPS55145339A (en) | Photo semiconductor device and its manufacture | |
JPH0322526A (ja) | 炭化珪素半導体装置の製造方法 | |
JPS5319777A (en) | Semiconductor laser | |
JPS5626480A (en) | Semiconductor light emitting device and manufacturing process thereof |