JPS5516443A - Semiconductor device and its production method - Google Patents

Semiconductor device and its production method

Info

Publication number
JPS5516443A
JPS5516443A JP8944678A JP8944678A JPS5516443A JP S5516443 A JPS5516443 A JP S5516443A JP 8944678 A JP8944678 A JP 8944678A JP 8944678 A JP8944678 A JP 8944678A JP S5516443 A JPS5516443 A JP S5516443A
Authority
JP
Japan
Prior art keywords
areas
difference
base
emitter
collector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8944678A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6225270B2 (enrdf_load_stackoverflow
Inventor
Kaoru Niino
Ichiro Imaizumi
Masatoshi Kimura
Shigeo Kato
Masayoshi Yoshimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP8944678A priority Critical patent/JPS5516443A/ja
Publication of JPS5516443A publication Critical patent/JPS5516443A/ja
Publication of JPS6225270B2 publication Critical patent/JPS6225270B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/641—Combinations of only vertical BJTs
    • H10D84/642—Combinations of non-inverted vertical BJTs of the same conductivity type having different characteristics, e.g. Darlington transistors

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
JP8944678A 1978-07-24 1978-07-24 Semiconductor device and its production method Granted JPS5516443A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8944678A JPS5516443A (en) 1978-07-24 1978-07-24 Semiconductor device and its production method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8944678A JPS5516443A (en) 1978-07-24 1978-07-24 Semiconductor device and its production method

Publications (2)

Publication Number Publication Date
JPS5516443A true JPS5516443A (en) 1980-02-05
JPS6225270B2 JPS6225270B2 (enrdf_load_stackoverflow) 1987-06-02

Family

ID=13970898

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8944678A Granted JPS5516443A (en) 1978-07-24 1978-07-24 Semiconductor device and its production method

Country Status (1)

Country Link
JP (1) JPS5516443A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6235567A (ja) * 1985-08-08 1987-02-16 Mitsubishi Electric Corp 半導体装置およびその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6235567A (ja) * 1985-08-08 1987-02-16 Mitsubishi Electric Corp 半導体装置およびその製造方法

Also Published As

Publication number Publication date
JPS6225270B2 (enrdf_load_stackoverflow) 1987-06-02

Similar Documents

Publication Publication Date Title
JPS5516443A (en) Semiconductor device and its production method
JPS53108287A (en) Manufacture of semiconductor device
JPS546768A (en) Manufacture of semiconductor device
JPS6459832A (en) Manufacture of semiconductor device
JPS5261977A (en) Semiconductor integrated circuit device and its production
JPS5353254A (en) Semiconductor device
JPS5244569A (en) Process for production of semiconductor element
JPS52103964A (en) Manufacture for semiconductor device
JPS5330275A (en) Etching method of fine pattern
JPS5427772A (en) Production of semiconductor devices
JPS5230185A (en) Process for producing semiconductor device
EP0096895A3 (en) Positive type radiation-sensitive organic highpolymer material and method of forming fine pattern by using the same
JPS5339862A (en) Production of beam lead type semiconductor device
JPS5347779A (en) Production of semiconductor device
JPS5235584A (en) Manufacturing process of semiconductor device
JPS556892A (en) Semiconductor integrated circuit
JPS5249781A (en) Process for production of semiconductor device
JPS52150983A (en) Production of semiconductor device
JPS5587149A (en) Photomask for preparation of semiconductor wafer
JPS5217768A (en) Production method of semi-conductor device
JPS5388580A (en) Production of semiconductor device
JPS52153382A (en) Preparation of semiconductor device
JPS5278384A (en) Production of semiconductor integrated circuit device
JPS544575A (en) Production of semiconductor devices
JPS5340280A (en) Manufacture of semiconductor unit