JPS6459832A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS6459832A
JPS6459832A JP21666787A JP21666787A JPS6459832A JP S6459832 A JPS6459832 A JP S6459832A JP 21666787 A JP21666787 A JP 21666787A JP 21666787 A JP21666787 A JP 21666787A JP S6459832 A JPS6459832 A JP S6459832A
Authority
JP
Japan
Prior art keywords
wiring part
mask
dummy
during
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP21666787A
Other languages
Japanese (ja)
Other versions
JPH0583176B2 (en
Inventor
Tatsuya Hirozawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP21666787A priority Critical patent/JPS6459832A/en
Priority to KR1019880011034A priority patent/KR910010219B1/en
Publication of JPS6459832A publication Critical patent/JPS6459832A/en
Publication of JPH0583176B2 publication Critical patent/JPH0583176B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To prevent a wiring part from becoming thin and from being disconnected during the formation of the wiring part and to enhance a product yield and reliability by a method wherein a mask region for dummy wiring part use is installed in a mask to be used during the formation of the wiring part for a semiconductor device and a dummy wiring part is installed by using this mask in addition to an element wiring part which is used actually. CONSTITUTION:A dummy pattern 4 of chromium oxide is installed additionally on a mask 1; a dummy wiring part 8 corresponding to the pattern is installed also on a chip 5; a ratio of a wiring part to a chip area is increased from 2.5% to about 40%. As a result, an effect that a resist adheres to a side wall in order to prevent side etching of the wiring part during an etching operation is increased remarkably; a phenomenon that wiring parts 7, 8 become thin and are disconnected after the etching operation is not caused.
JP21666787A 1987-08-31 1987-08-31 Manufacture of semiconductor device Granted JPS6459832A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP21666787A JPS6459832A (en) 1987-08-31 1987-08-31 Manufacture of semiconductor device
KR1019880011034A KR910010219B1 (en) 1987-08-31 1988-08-30 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21666787A JPS6459832A (en) 1987-08-31 1987-08-31 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS6459832A true JPS6459832A (en) 1989-03-07
JPH0583176B2 JPH0583176B2 (en) 1993-11-25

Family

ID=16692039

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21666787A Granted JPS6459832A (en) 1987-08-31 1987-08-31 Manufacture of semiconductor device

Country Status (2)

Country Link
JP (1) JPS6459832A (en)
KR (1) KR910010219B1 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0683035A (en) * 1993-06-28 1994-03-25 Seiko Epson Corp Mask structure for flexible circuit board
US5436095A (en) * 1991-07-11 1995-07-25 Hitachi, Ltd. Manufacturing method or an exposing method for a semiconductor device for a semiconductor integrated circuit device and a mask used therefor
EP1043626A1 (en) * 1999-04-06 2000-10-11 STMicroelectronics S.r.l. A method for improving the performance of photolithographic equipment and for increasing the lifetime of the optics thereof
US6235836B1 (en) 1995-11-28 2001-05-22 Hyundai Electronics Industries Co., Ltd. Vinyl 4-t-butoxycarbonyloxbenzal-vinyl alcohol-vinylacetate copolymer and preparation method thereof

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3085259B2 (en) * 1997-09-17 2000-09-04 日本電気株式会社 Exposure pattern and method for generating the same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62281328A (en) * 1986-05-30 1987-12-07 Nec Corp Manufacture of semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62281328A (en) * 1986-05-30 1987-12-07 Nec Corp Manufacture of semiconductor device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5436095A (en) * 1991-07-11 1995-07-25 Hitachi, Ltd. Manufacturing method or an exposing method for a semiconductor device for a semiconductor integrated circuit device and a mask used therefor
JPH0683035A (en) * 1993-06-28 1994-03-25 Seiko Epson Corp Mask structure for flexible circuit board
US6235836B1 (en) 1995-11-28 2001-05-22 Hyundai Electronics Industries Co., Ltd. Vinyl 4-t-butoxycarbonyloxbenzal-vinyl alcohol-vinylacetate copolymer and preparation method thereof
US6559228B2 (en) 1995-11-28 2003-05-06 Hyundai Electronics Industries Co. Ltd. Vinyl 4-t-butoxycarbonyloxybenzal-vinyl 4-hydroxybenzal-vinyl alcohol-vinyl acetate copolymer
EP1043626A1 (en) * 1999-04-06 2000-10-11 STMicroelectronics S.r.l. A method for improving the performance of photolithographic equipment and for increasing the lifetime of the optics thereof

Also Published As

Publication number Publication date
KR890004394A (en) 1989-04-21
KR910010219B1 (en) 1991-12-21
JPH0583176B2 (en) 1993-11-25

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees