JPS6225270B2 - - Google Patents

Info

Publication number
JPS6225270B2
JPS6225270B2 JP53089446A JP8944678A JPS6225270B2 JP S6225270 B2 JPS6225270 B2 JP S6225270B2 JP 53089446 A JP53089446 A JP 53089446A JP 8944678 A JP8944678 A JP 8944678A JP S6225270 B2 JPS6225270 B2 JP S6225270B2
Authority
JP
Japan
Prior art keywords
etching
epitaxial layer
layer
recess
diffusion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP53089446A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5516443A (en
Inventor
Kaoru Niino
Ichiro Imaizumi
Masatoshi Kimura
Shigeo Kato
Masayoshi Yoshimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP8944678A priority Critical patent/JPS5516443A/ja
Publication of JPS5516443A publication Critical patent/JPS5516443A/ja
Publication of JPS6225270B2 publication Critical patent/JPS6225270B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/641Combinations of only vertical BJTs
    • H10D84/642Combinations of non-inverted vertical BJTs of the same conductivity type having different characteristics, e.g. Darlington transistors

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
JP8944678A 1978-07-24 1978-07-24 Semiconductor device and its production method Granted JPS5516443A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8944678A JPS5516443A (en) 1978-07-24 1978-07-24 Semiconductor device and its production method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8944678A JPS5516443A (en) 1978-07-24 1978-07-24 Semiconductor device and its production method

Publications (2)

Publication Number Publication Date
JPS5516443A JPS5516443A (en) 1980-02-05
JPS6225270B2 true JPS6225270B2 (enrdf_load_stackoverflow) 1987-06-02

Family

ID=13970898

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8944678A Granted JPS5516443A (en) 1978-07-24 1978-07-24 Semiconductor device and its production method

Country Status (1)

Country Link
JP (1) JPS5516443A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6235567A (ja) * 1985-08-08 1987-02-16 Mitsubishi Electric Corp 半導体装置およびその製造方法

Also Published As

Publication number Publication date
JPS5516443A (en) 1980-02-05

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