JPS5516443A - Semiconductor device and its production method - Google Patents

Semiconductor device and its production method

Info

Publication number
JPS5516443A
JPS5516443A JP8944678A JP8944678A JPS5516443A JP S5516443 A JPS5516443 A JP S5516443A JP 8944678 A JP8944678 A JP 8944678A JP 8944678 A JP8944678 A JP 8944678A JP S5516443 A JPS5516443 A JP S5516443A
Authority
JP
Japan
Prior art keywords
areas
difference
base
emitter
collector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8944678A
Other languages
Japanese (ja)
Other versions
JPS6225270B2 (en
Inventor
Kaoru Niino
Ichiro Imaizumi
Masatoshi Kimura
Shigeo Kato
Masayoshi Yoshimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP8944678A priority Critical patent/JPS5516443A/en
Publication of JPS5516443A publication Critical patent/JPS5516443A/en
Publication of JPS6225270B2 publication Critical patent/JPS6225270B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0825—Combination of vertical direct transistors of the same conductivity type having different characteristics,(e.g. Darlington transistors)

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To increase the yield and decrease the chip size by discriminating the surface heights, by locating (mask fitting) by the standards of this difference in level to form accurate patterns. CONSTITUTION:On a base plate 1 are formed a high-pressure resist transistor with a collector 5, a base 6, an emitter 7 and a low-pressure resist (small signal) transistor with a collector 21, a base 61, an emitter 71, electrically separated from each other by an isolation area 4. The surface height of areas 6, 7 are lower than that of areas 61, 71. With the difference of surface height between areas 6, 7 and areas 61, 71, the level difference part 8 becomes the standard for location (mask fitting) for area 4 or 5.
JP8944678A 1978-07-24 1978-07-24 Semiconductor device and its production method Granted JPS5516443A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8944678A JPS5516443A (en) 1978-07-24 1978-07-24 Semiconductor device and its production method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8944678A JPS5516443A (en) 1978-07-24 1978-07-24 Semiconductor device and its production method

Publications (2)

Publication Number Publication Date
JPS5516443A true JPS5516443A (en) 1980-02-05
JPS6225270B2 JPS6225270B2 (en) 1987-06-02

Family

ID=13970898

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8944678A Granted JPS5516443A (en) 1978-07-24 1978-07-24 Semiconductor device and its production method

Country Status (1)

Country Link
JP (1) JPS5516443A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6235567A (en) * 1985-08-08 1987-02-16 Mitsubishi Electric Corp Semiconductor device and manufacture thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6235567A (en) * 1985-08-08 1987-02-16 Mitsubishi Electric Corp Semiconductor device and manufacture thereof

Also Published As

Publication number Publication date
JPS6225270B2 (en) 1987-06-02

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