JPS55159436A - Positive type resist material and pattern forming method - Google Patents

Positive type resist material and pattern forming method

Info

Publication number
JPS55159436A
JPS55159436A JP5799579A JP5799579A JPS55159436A JP S55159436 A JPS55159436 A JP S55159436A JP 5799579 A JP5799579 A JP 5799579A JP 5799579 A JP5799579 A JP 5799579A JP S55159436 A JPS55159436 A JP S55159436A
Authority
JP
Japan
Prior art keywords
resist material
cross
positive type
monomer
type resist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5799579A
Other languages
Japanese (ja)
Other versions
JPS6128982B2 (en
Inventor
Jiro Naito
Yasuhiro Yoneda
Tateo Kitamura
Toshisuke Kitakoji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP5799579A priority Critical patent/JPS55159436A/en
Publication of JPS55159436A publication Critical patent/JPS55159436A/en
Publication of JPS6128982B2 publication Critical patent/JPS6128982B2/ja
Granted legal-status Critical Current

Links

Abstract

PURPOSE: To obtain a positive type resist material superior in dry etching resistance, sensitivity, and resolution, by copolymerizing benzyl methacrylate with a specified monomer.
CONSTITUTION: Benzyl methacrylate (A), monomer incapable of cross-linking (methyl methacrylate, methylisopropenyl ketone, or the like) (B), and a monomer capable of cross-linking (a combination of methacrylic acid and methacryloyl chloride) are polymerized to form a copolymer (preferably, of 10,000W1 million molecular weight) for use in a resist material. This resist material is coated on a base to form a resist film, heat-treated at 120W250°C to cross-link the copolymer and form a three-dimensional network resist film, and a pattern is formed by irradiating it by electron beams, X-rays, or other ionization radiation, and developing it.
COPYRIGHT: (C)1980,JPO&Japio
JP5799579A 1979-05-14 1979-05-14 Positive type resist material and pattern forming method Granted JPS55159436A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5799579A JPS55159436A (en) 1979-05-14 1979-05-14 Positive type resist material and pattern forming method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5799579A JPS55159436A (en) 1979-05-14 1979-05-14 Positive type resist material and pattern forming method

Publications (2)

Publication Number Publication Date
JPS55159436A true JPS55159436A (en) 1980-12-11
JPS6128982B2 JPS6128982B2 (en) 1986-07-03

Family

ID=13071581

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5799579A Granted JPS55159436A (en) 1979-05-14 1979-05-14 Positive type resist material and pattern forming method

Country Status (1)

Country Link
JP (1) JPS55159436A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5868743A (en) * 1981-10-21 1983-04-23 Hitachi Ltd Radation sensitive organic polymer material

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5868743A (en) * 1981-10-21 1983-04-23 Hitachi Ltd Radation sensitive organic polymer material

Also Published As

Publication number Publication date
JPS6128982B2 (en) 1986-07-03

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