JPS55158662A - Semiconductor memory storage - Google Patents

Semiconductor memory storage

Info

Publication number
JPS55158662A
JPS55158662A JP6696679A JP6696679A JPS55158662A JP S55158662 A JPS55158662 A JP S55158662A JP 6696679 A JP6696679 A JP 6696679A JP 6696679 A JP6696679 A JP 6696679A JP S55158662 A JPS55158662 A JP S55158662A
Authority
JP
Japan
Prior art keywords
lambda
source
semiconductor memory
memory storage
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6696679A
Other languages
English (en)
Japanese (ja)
Other versions
JPS613106B2 (Direct
Inventor
Nobuo Sasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP6696679A priority Critical patent/JPS55158662A/ja
Publication of JPS55158662A publication Critical patent/JPS55158662A/ja
Publication of JPS613106B2 publication Critical patent/JPS613106B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates

Landscapes

  • Static Random-Access Memory (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
JP6696679A 1979-05-30 1979-05-30 Semiconductor memory storage Granted JPS55158662A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6696679A JPS55158662A (en) 1979-05-30 1979-05-30 Semiconductor memory storage

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6696679A JPS55158662A (en) 1979-05-30 1979-05-30 Semiconductor memory storage

Publications (2)

Publication Number Publication Date
JPS55158662A true JPS55158662A (en) 1980-12-10
JPS613106B2 JPS613106B2 (Direct) 1986-01-30

Family

ID=13331265

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6696679A Granted JPS55158662A (en) 1979-05-30 1979-05-30 Semiconductor memory storage

Country Status (1)

Country Link
JP (1) JPS55158662A (Direct)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56162862A (en) * 1980-05-20 1981-12-15 Toshiba Corp Semiconductor device
US4619798A (en) * 1983-12-26 1986-10-28 Toshiba Ceramics Co., Ltd. Method of manufacturing parts for use to the heat processing furnace
US4753763A (en) * 1983-12-26 1988-06-28 Toshiba Ceramics Co., Ltd. Method of manufacturing heating furnace parts

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02147309U (Direct) * 1989-05-18 1990-12-14

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56162862A (en) * 1980-05-20 1981-12-15 Toshiba Corp Semiconductor device
US4619798A (en) * 1983-12-26 1986-10-28 Toshiba Ceramics Co., Ltd. Method of manufacturing parts for use to the heat processing furnace
US4753763A (en) * 1983-12-26 1988-06-28 Toshiba Ceramics Co., Ltd. Method of manufacturing heating furnace parts

Also Published As

Publication number Publication date
JPS613106B2 (Direct) 1986-01-30

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