JPS55158659A - Semiconductor memory storage - Google Patents

Semiconductor memory storage

Info

Publication number
JPS55158659A
JPS55158659A JP6619279A JP6619279A JPS55158659A JP S55158659 A JPS55158659 A JP S55158659A JP 6619279 A JP6619279 A JP 6619279A JP 6619279 A JP6619279 A JP 6619279A JP S55158659 A JPS55158659 A JP S55158659A
Authority
JP
Japan
Prior art keywords
collector
transistor
layer
oxide film
holes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6619279A
Other languages
English (en)
Other versions
JPS6325715B2 (ja
Inventor
Takeo Shiba
Katsumi Ogiue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP6619279A priority Critical patent/JPS55158659A/ja
Publication of JPS55158659A publication Critical patent/JPS55158659A/ja
Publication of JPS6325715B2 publication Critical patent/JPS6325715B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/10—SRAM devices comprising bipolar components

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
  • Bipolar Transistors (AREA)
JP6619279A 1979-05-30 1979-05-30 Semiconductor memory storage Granted JPS55158659A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6619279A JPS55158659A (en) 1979-05-30 1979-05-30 Semiconductor memory storage

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6619279A JPS55158659A (en) 1979-05-30 1979-05-30 Semiconductor memory storage

Publications (2)

Publication Number Publication Date
JPS55158659A true JPS55158659A (en) 1980-12-10
JPS6325715B2 JPS6325715B2 (ja) 1988-05-26

Family

ID=13308728

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6619279A Granted JPS55158659A (en) 1979-05-30 1979-05-30 Semiconductor memory storage

Country Status (1)

Country Link
JP (1) JPS55158659A (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57167675A (en) * 1981-04-08 1982-10-15 Nec Corp Semiconductor device
JPS596571A (ja) * 1982-07-05 1984-01-13 Nec Corp 半導体メモリ
JPS6028262A (ja) * 1983-07-26 1985-02-13 Nec Corp 半導体メモリセル
US4763182A (en) * 1985-12-16 1988-08-09 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory device with deep bit-line channel stopper
JPH02144925A (ja) * 1988-11-26 1990-06-04 Nec Corp 半導体装置

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DK3703208T3 (da) 2017-10-24 2023-01-09 Furukawa Electric Co Ltd Elektrisk ledningsrør, forbindelsesstruktur for elektrisk ledningsrør, klokkeblok, fremgangsmåde til forbindelse af elektriske ledningsrør, fremgangsmåde til forbindelse af elektrisk ledningsrør og klokkeblok, rørforbindelse og ringelement

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57167675A (en) * 1981-04-08 1982-10-15 Nec Corp Semiconductor device
JPH0313757B2 (ja) * 1981-04-08 1991-02-25 Nippon Electric Co
JPS596571A (ja) * 1982-07-05 1984-01-13 Nec Corp 半導体メモリ
JPH041506B2 (ja) * 1982-07-05 1992-01-13 Nippon Electric Co
JPS6028262A (ja) * 1983-07-26 1985-02-13 Nec Corp 半導体メモリセル
US4763182A (en) * 1985-12-16 1988-08-09 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory device with deep bit-line channel stopper
JPH02144925A (ja) * 1988-11-26 1990-06-04 Nec Corp 半導体装置

Also Published As

Publication number Publication date
JPS6325715B2 (ja) 1988-05-26

Similar Documents

Publication Publication Date Title
EP0145606B1 (en) Semiconductor memory device
JPS564263A (en) Semiconductor memory
JPS55128869A (en) Semiconductor device and method of fabricating the same
US4144096A (en) Solar battery and method of manufacture
US4476623A (en) Method of fabricating a bipolar dynamic memory cell
JPS55158659A (en) Semiconductor memory storage
JPS61140168A (ja) 半導体記憶装置
JPS55140265A (en) Semiconductor memory device and method of fabricating the same
JPH0629493A (ja) 半導体固定記憶装置
JPS57167675A (en) Semiconductor device
JPS60253265A (ja) 半導体記憶装置
JPS6322069B2 (ja)
US4459606A (en) Integrated injection logic semiconductor devices
JPS5567161A (en) Semiconductor memory storage
GB1446386A (en) Single bipolar transistor memory cell and methods of operation and fabrication
JPS55128862A (en) Junction breakdown write-in type semiconductor memory device and method of fabricating the same
JPS55128861A (en) Semiconductor integrated circuit device and method of fabricating the same
JPS6425460A (en) Semiconductor memory
JPS56105666A (en) Semiconductor memory device
JPS57197851A (en) Semiconductor integrated injection logic circuit
JPS5591166A (en) Semiconductor memory
JPS55121678A (en) Charge transfer device
JPS62152156A (ja) 半導体記憶装置
JPS5834944B2 (ja) 半導体記憶装置
JPS5819142B2 (ja) 半導体記憶装置