JPS55158631A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS55158631A JPS55158631A JP6697679A JP6697679A JPS55158631A JP S55158631 A JPS55158631 A JP S55158631A JP 6697679 A JP6697679 A JP 6697679A JP 6697679 A JP6697679 A JP 6697679A JP S55158631 A JPS55158631 A JP S55158631A
- Authority
- JP
- Japan
- Prior art keywords
- electrodes
- boats
- becoming
- groove
- evaporating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6697679A JPS55158631A (en) | 1979-05-30 | 1979-05-30 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6697679A JPS55158631A (en) | 1979-05-30 | 1979-05-30 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55158631A true JPS55158631A (en) | 1980-12-10 |
| JPS6138850B2 JPS6138850B2 (enExample) | 1986-09-01 |
Family
ID=13331554
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6697679A Granted JPS55158631A (en) | 1979-05-30 | 1979-05-30 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55158631A (enExample) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57130477A (en) * | 1981-02-05 | 1982-08-12 | Nec Corp | Manufacture of field-effect transistor |
| JPS57166085A (en) * | 1981-04-03 | 1982-10-13 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPS57163791U (enExample) * | 1981-04-10 | 1982-10-15 | ||
| JPS5821877A (ja) * | 1981-07-31 | 1983-02-08 | Fujitsu Ltd | 半導体装置の製造方法 |
| JPS58162069A (ja) * | 1982-03-19 | 1983-09-26 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
| JP2001237198A (ja) * | 2000-02-23 | 2001-08-31 | Nec Kansai Ltd | リフトオフ法による電極形成のための蒸着方法 |
| JP2004342698A (ja) * | 2003-05-13 | 2004-12-02 | Sumitomo Electric Ind Ltd | 半導体装置の製造方法 |
-
1979
- 1979-05-30 JP JP6697679A patent/JPS55158631A/ja active Granted
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57130477A (en) * | 1981-02-05 | 1982-08-12 | Nec Corp | Manufacture of field-effect transistor |
| JPS57166085A (en) * | 1981-04-03 | 1982-10-13 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPS57163791U (enExample) * | 1981-04-10 | 1982-10-15 | ||
| JPS5821877A (ja) * | 1981-07-31 | 1983-02-08 | Fujitsu Ltd | 半導体装置の製造方法 |
| JPS58162069A (ja) * | 1982-03-19 | 1983-09-26 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
| JP2001237198A (ja) * | 2000-02-23 | 2001-08-31 | Nec Kansai Ltd | リフトオフ法による電極形成のための蒸着方法 |
| JP2004342698A (ja) * | 2003-05-13 | 2004-12-02 | Sumitomo Electric Ind Ltd | 半導体装置の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6138850B2 (enExample) | 1986-09-01 |
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