JPS55157269A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS55157269A JPS55157269A JP6463679A JP6463679A JPS55157269A JP S55157269 A JPS55157269 A JP S55157269A JP 6463679 A JP6463679 A JP 6463679A JP 6463679 A JP6463679 A JP 6463679A JP S55157269 A JPS55157269 A JP S55157269A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- actuating
- passivation
- grown
- influence
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000002161 passivation Methods 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 2
- BYDQGSVXQDOSJJ-UHFFFAOYSA-N [Ge].[Au] Chemical compound [Ge].[Au] BYDQGSVXQDOSJJ-UHFFFAOYSA-N 0.000 abstract 1
- 230000003213 activating effect Effects 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE:To eliminate the influence to the actuating layer of a depletion layer caused by an interfacial level by providing a semiconductor layer with a lower resistance than the actuating layer on the surface of a semiconductor actuating layer. CONSTITUTION:A buffer layer 2 and an n-type activating layer 3 are grown on a substrate 1 and an n<+>-type layer is grown on the said substrate as a passivation layer 9. Then a source electrode 5, consisting of gold germanium, and a drain electrode 6 are formed on the said passivation layer 9. Next, the passivation layer 9 is selectively removed using a photo resist layer 10 as a mask and a gate metal, consisting of aluminum, is evaporated. Thus the stretch of the depletion layer in the low-resistive passivation crystalline layer, caused by an interfacial level potential, is controlled and its influence is not extended to the actuating layer.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6463679A JPS55157269A (en) | 1979-05-25 | 1979-05-25 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6463679A JPS55157269A (en) | 1979-05-25 | 1979-05-25 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS55157269A true JPS55157269A (en) | 1980-12-06 |
Family
ID=13263944
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6463679A Pending JPS55157269A (en) | 1979-05-25 | 1979-05-25 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55157269A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5879774A (en) * | 1981-11-06 | 1983-05-13 | Fujitsu Ltd | Semiconductor device |
JPS6085567A (en) * | 1983-10-17 | 1985-05-15 | Mitsubishi Electric Corp | Field-effect transistor |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS495582A (en) * | 1972-05-03 | 1974-01-18 | ||
JPS524425A (en) * | 1975-07-01 | 1977-01-13 | Oizumi Koujiyou Kk | Structure and improvements of casting method of heat exchanging device with fins using boiler |
JPS5248478A (en) * | 1975-10-16 | 1977-04-18 | Fujitsu Ltd | Process for production of semiconductor device |
JPS5257786A (en) * | 1975-11-07 | 1977-05-12 | Toshiba Corp | Field effect transistor |
-
1979
- 1979-05-25 JP JP6463679A patent/JPS55157269A/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS495582A (en) * | 1972-05-03 | 1974-01-18 | ||
JPS524425A (en) * | 1975-07-01 | 1977-01-13 | Oizumi Koujiyou Kk | Structure and improvements of casting method of heat exchanging device with fins using boiler |
JPS5248478A (en) * | 1975-10-16 | 1977-04-18 | Fujitsu Ltd | Process for production of semiconductor device |
JPS5257786A (en) * | 1975-11-07 | 1977-05-12 | Toshiba Corp | Field effect transistor |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5879774A (en) * | 1981-11-06 | 1983-05-13 | Fujitsu Ltd | Semiconductor device |
JPS6085567A (en) * | 1983-10-17 | 1985-05-15 | Mitsubishi Electric Corp | Field-effect transistor |
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