JPS55154769A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS55154769A
JPS55154769A JP6299679A JP6299679A JPS55154769A JP S55154769 A JPS55154769 A JP S55154769A JP 6299679 A JP6299679 A JP 6299679A JP 6299679 A JP6299679 A JP 6299679A JP S55154769 A JPS55154769 A JP S55154769A
Authority
JP
Japan
Prior art keywords
film
region
sio2
type
coated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6299679A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6161268B2 (enrdf_load_stackoverflow
Inventor
Hideto Goto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP6299679A priority Critical patent/JPS55154769A/ja
Publication of JPS55154769A publication Critical patent/JPS55154769A/ja
Publication of JPS6161268B2 publication Critical patent/JPS6161268B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Formation Of Insulating Films (AREA)
JP6299679A 1979-05-22 1979-05-22 Manufacture of semiconductor device Granted JPS55154769A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6299679A JPS55154769A (en) 1979-05-22 1979-05-22 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6299679A JPS55154769A (en) 1979-05-22 1979-05-22 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS55154769A true JPS55154769A (en) 1980-12-02
JPS6161268B2 JPS6161268B2 (enrdf_load_stackoverflow) 1986-12-24

Family

ID=13216484

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6299679A Granted JPS55154769A (en) 1979-05-22 1979-05-22 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS55154769A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5935474A (ja) * 1982-08-23 1984-02-27 Toshiba Corp 半導体装置の製造方法
JPS5935475A (ja) * 1982-08-23 1984-02-27 Toshiba Corp 半導体装置の製造方法
US6022781A (en) * 1994-12-28 2000-02-08 International Business Machines Corporation Method for fabricating a MOSFET with raised STI isolation self-aligned to the gate stack

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01179060U (enrdf_load_stackoverflow) * 1988-06-10 1989-12-21

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5935474A (ja) * 1982-08-23 1984-02-27 Toshiba Corp 半導体装置の製造方法
JPS5935475A (ja) * 1982-08-23 1984-02-27 Toshiba Corp 半導体装置の製造方法
US6022781A (en) * 1994-12-28 2000-02-08 International Business Machines Corporation Method for fabricating a MOSFET with raised STI isolation self-aligned to the gate stack

Also Published As

Publication number Publication date
JPS6161268B2 (enrdf_load_stackoverflow) 1986-12-24

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