JPS55153375A - Non-volatile semiconductor memory device - Google Patents

Non-volatile semiconductor memory device

Info

Publication number
JPS55153375A
JPS55153375A JP6200179A JP6200179A JPS55153375A JP S55153375 A JPS55153375 A JP S55153375A JP 6200179 A JP6200179 A JP 6200179A JP 6200179 A JP6200179 A JP 6200179A JP S55153375 A JPS55153375 A JP S55153375A
Authority
JP
Japan
Prior art keywords
gate
transistor
film
electrode
polycrystaline
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6200179A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6344307B2 (enrdf_load_html_response
Inventor
Masanori Kikuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP6200179A priority Critical patent/JPS55153375A/ja
Publication of JPS55153375A publication Critical patent/JPS55153375A/ja
Publication of JPS6344307B2 publication Critical patent/JPS6344307B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

Landscapes

  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP6200179A 1979-05-18 1979-05-18 Non-volatile semiconductor memory device Granted JPS55153375A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6200179A JPS55153375A (en) 1979-05-18 1979-05-18 Non-volatile semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6200179A JPS55153375A (en) 1979-05-18 1979-05-18 Non-volatile semiconductor memory device

Publications (2)

Publication Number Publication Date
JPS55153375A true JPS55153375A (en) 1980-11-29
JPS6344307B2 JPS6344307B2 (enrdf_load_html_response) 1988-09-05

Family

ID=13187473

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6200179A Granted JPS55153375A (en) 1979-05-18 1979-05-18 Non-volatile semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS55153375A (enrdf_load_html_response)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5066992A (en) * 1989-06-23 1991-11-19 Atmel Corporation Programmable and erasable MOS memory device
US5084745A (en) * 1983-04-18 1992-01-28 Kabushiki Kaisha Toshiba Semiconductor memory device having a floating gate

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5138938A (enrdf_load_html_response) * 1974-09-30 1976-03-31 Nippon Electric Co
JPS5164338A (enrdf_load_html_response) * 1975-09-01 1976-06-03 Tokyo Shibaura Electric Co

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5138938A (enrdf_load_html_response) * 1974-09-30 1976-03-31 Nippon Electric Co
JPS5164338A (enrdf_load_html_response) * 1975-09-01 1976-06-03 Tokyo Shibaura Electric Co

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5084745A (en) * 1983-04-18 1992-01-28 Kabushiki Kaisha Toshiba Semiconductor memory device having a floating gate
US5066992A (en) * 1989-06-23 1991-11-19 Atmel Corporation Programmable and erasable MOS memory device

Also Published As

Publication number Publication date
JPS6344307B2 (enrdf_load_html_response) 1988-09-05

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