JPS55150288A - Semiconductor laser - Google Patents

Semiconductor laser

Info

Publication number
JPS55150288A
JPS55150288A JP5744379A JP5744379A JPS55150288A JP S55150288 A JPS55150288 A JP S55150288A JP 5744379 A JP5744379 A JP 5744379A JP 5744379 A JP5744379 A JP 5744379A JP S55150288 A JPS55150288 A JP S55150288A
Authority
JP
Japan
Prior art keywords
layer
groove
active layer
type
type gaas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5744379A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6237829B2 (enrdf_load_stackoverflow
Inventor
Masashi Dosen
Masaaki Ayabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP5744379A priority Critical patent/JPS55150288A/ja
Publication of JPS55150288A publication Critical patent/JPS55150288A/ja
Publication of JPS6237829B2 publication Critical patent/JPS6237829B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
    • H01S5/1064—Comprising an active region having a varying composition or cross-section in a specific direction varying width along the optical axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2237—Buried stripe structure with a non-planar active layer

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Semiconductor Lasers (AREA)
JP5744379A 1979-05-10 1979-05-10 Semiconductor laser Granted JPS55150288A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5744379A JPS55150288A (en) 1979-05-10 1979-05-10 Semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5744379A JPS55150288A (en) 1979-05-10 1979-05-10 Semiconductor laser

Publications (2)

Publication Number Publication Date
JPS55150288A true JPS55150288A (en) 1980-11-22
JPS6237829B2 JPS6237829B2 (enrdf_load_stackoverflow) 1987-08-14

Family

ID=13055793

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5744379A Granted JPS55150288A (en) 1979-05-10 1979-05-10 Semiconductor laser

Country Status (1)

Country Link
JP (1) JPS55150288A (enrdf_load_stackoverflow)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57153488A (en) * 1981-03-17 1982-09-22 Matsushita Electric Ind Co Ltd Semiconductor device
JPS58225681A (ja) * 1982-06-23 1983-12-27 Sharp Corp 半導体レ−ザ素子
JPS5963788A (ja) * 1982-10-04 1984-04-11 Agency Of Ind Science & Technol 半導体レ−ザ
JPS635587A (ja) * 1986-06-25 1988-01-11 Mitsubishi Electric Corp 半導体レ−ザ装置
US4926431A (en) * 1987-08-04 1990-05-15 Sharp Kabushiki Kaisha Semiconductor laser device which is stable for a long period of time
JP2004056124A (ja) * 2002-07-19 2004-02-19 Samsung Electro Mech Co Ltd 電流制限層が形成された半導体レーザダイオード及びその製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5425686A (en) * 1977-07-29 1979-02-26 Nec Corp Semiconductor junction laser

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5425686A (en) * 1977-07-29 1979-02-26 Nec Corp Semiconductor junction laser

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57153488A (en) * 1981-03-17 1982-09-22 Matsushita Electric Ind Co Ltd Semiconductor device
JPS58225681A (ja) * 1982-06-23 1983-12-27 Sharp Corp 半導体レ−ザ素子
JPS5963788A (ja) * 1982-10-04 1984-04-11 Agency Of Ind Science & Technol 半導体レ−ザ
JPS635587A (ja) * 1986-06-25 1988-01-11 Mitsubishi Electric Corp 半導体レ−ザ装置
US4926431A (en) * 1987-08-04 1990-05-15 Sharp Kabushiki Kaisha Semiconductor laser device which is stable for a long period of time
JP2004056124A (ja) * 2002-07-19 2004-02-19 Samsung Electro Mech Co Ltd 電流制限層が形成された半導体レーザダイオード及びその製造方法
US7785911B2 (en) 2002-07-19 2010-08-31 Samsung Electro-Mechanics Co., Ltd. Semiconductor laser diode with current restricting layer and fabrication method thereof

Also Published As

Publication number Publication date
JPS6237829B2 (enrdf_load_stackoverflow) 1987-08-14

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