JPS57153488A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS57153488A
JPS57153488A JP3895781A JP3895781A JPS57153488A JP S57153488 A JPS57153488 A JP S57153488A JP 3895781 A JP3895781 A JP 3895781A JP 3895781 A JP3895781 A JP 3895781A JP S57153488 A JPS57153488 A JP S57153488A
Authority
JP
Japan
Prior art keywords
layer
width
groove
light
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3895781A
Other languages
Japanese (ja)
Other versions
JPH0141261B2 (en
Inventor
Takashi Sugino
Kunio Ito
Masaru Wada
Yuichi Shimizu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP3895781A priority Critical patent/JPS57153488A/en
Priority to US06/357,086 priority patent/US4520485A/en
Publication of JPS57153488A publication Critical patent/JPS57153488A/en
Publication of JPH0141261B2 publication Critical patent/JPH0141261B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
    • H01S5/1014—Tapered waveguide, e.g. spotsize converter
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
    • H01S5/1064—Comprising an active region having a varying composition or cross-section in a specific direction varying width along the optical axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To obtain a photo guiding passage with fluctuated groove width by forming a crystal layer on the surface of a semiconductor substrate having the groove with fluctuated width. CONSTITUTION:A groove 9 with fluctuated width is formed on an n type Ga As crystal substrate 9. On this substrate, an n type Ga Al As 11 and non-doped Ga As 12, for instance, are continuously grown. In this contruction, the groove 11' of the layer 11 and flat 11'' differ in thickness and a light that propagates in the layer 12 travels through the thinner part 11'' of the layer 11 and leaks to the substrate 9, and is trapped in the layer 2 on a thicker part 11'. Therefore, if the thickness of 11', 11'' of the layer are made according to the frequency of the light, the light propagates in the part shown by a dotted line. If the dotted part is used for a photo guiding passage and since the width of an entrance and an exit can be varied, the light is guided through a wider side X', Y' and taken out through a narrow side, X, Y, improving coupling efficiency of optical fiber.
JP3895781A 1981-03-17 1981-03-17 Semiconductor device Granted JPS57153488A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP3895781A JPS57153488A (en) 1981-03-17 1981-03-17 Semiconductor device
US06/357,086 US4520485A (en) 1981-03-17 1982-03-11 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3895781A JPS57153488A (en) 1981-03-17 1981-03-17 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS57153488A true JPS57153488A (en) 1982-09-22
JPH0141261B2 JPH0141261B2 (en) 1989-09-04

Family

ID=12539659

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3895781A Granted JPS57153488A (en) 1981-03-17 1981-03-17 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS57153488A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59121302A (en) * 1982-12-27 1984-07-13 インタ−ナシヨナル　ビジネス　マシ−ンズ　コ−ポレ−シヨン Light wave guide having opening below micron, manufacture thereof and optical memory using same

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4893289A (en) * 1972-02-08 1973-12-03
JPS55150288A (en) * 1979-05-10 1980-11-22 Sony Corp Semiconductor laser

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4893289A (en) * 1972-02-08 1973-12-03
JPS55150288A (en) * 1979-05-10 1980-11-22 Sony Corp Semiconductor laser

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59121302A (en) * 1982-12-27 1984-07-13 インタ−ナシヨナル　ビジネス　マシ−ンズ　コ−ポレ−シヨン Light wave guide having opening below micron, manufacture thereof and optical memory using same
JPH0521201B2 (en) * 1982-12-27 1993-03-23 Intaanashonaru Bijinesu Mashiinzu Corp

Also Published As

Publication number Publication date
JPH0141261B2 (en) 1989-09-04

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