JPS55147630A - Photomask - Google Patents

Photomask

Info

Publication number
JPS55147630A
JPS55147630A JP5615779A JP5615779A JPS55147630A JP S55147630 A JPS55147630 A JP S55147630A JP 5615779 A JP5615779 A JP 5615779A JP 5615779 A JP5615779 A JP 5615779A JP S55147630 A JPS55147630 A JP S55147630A
Authority
JP
Japan
Prior art keywords
pattern
masks
exposed
emulsion
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5615779A
Other languages
Japanese (ja)
Inventor
Haruaki Kinoshita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP5615779A priority Critical patent/JPS55147630A/en
Publication of JPS55147630A publication Critical patent/JPS55147630A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

PURPOSE:To obtain a photomask of high quality by forming an emulsion pattern on a transparent substrate outside the effective pattern region of a mask to prevent the emulsion mask and a hard mask from sticking. CONSTITUTION:Emulsion pattern 4' is formed entirely or partially on a transparent substrate outside frame pattern 3' showing the border of an activated region where element patterns 1', 2' of IC or the like are formed. When peripheral portion 4' alone of frame 3' is exposed to form a pattern, silver is deposited on the exposed portion, and the portion is slightly protruded from the unexposed portion. In order to transfer this pattern onto a hard mask for copy, both the masks are vacuum- contacted, and pattern 2' is exposed. When the masks are separated, by destroying the vacuum gas readily enters between the masks to prevent sticking since there is a height difference between unexposed portion 1' and exposed portions 2', 4'. Thus, the masks are easily separated and can be protected from contamination, breaking, etc.
JP5615779A 1979-05-08 1979-05-08 Photomask Pending JPS55147630A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5615779A JPS55147630A (en) 1979-05-08 1979-05-08 Photomask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5615779A JPS55147630A (en) 1979-05-08 1979-05-08 Photomask

Publications (1)

Publication Number Publication Date
JPS55147630A true JPS55147630A (en) 1980-11-17

Family

ID=13019248

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5615779A Pending JPS55147630A (en) 1979-05-08 1979-05-08 Photomask

Country Status (1)

Country Link
JP (1) JPS55147630A (en)

Similar Documents

Publication Publication Date Title
GB1516044A (en) Resist masks
JPS57190912A (en) Production of color filter
JPS5255869A (en) Production of semiconductor device
JPS55147630A (en) Photomask
JPS5321576A (en) Mask for x-ray exposure
JPS52139375A (en) Mask for x-ray exposure
EP0057268A3 (en) Method of fabricating x-ray lithographic masks
JPS56156636A (en) Mask nega pattern
JPS6488546A (en) Method for exposing thick film resist
JPS57155539A (en) Mask
KR910001875A (en) Manufacturing Method of Exposure Mask
JPS55135837A (en) Manufacture of photomask
JPS6472163A (en) Formation of thin film pattern
JPS5456368A (en) Sticking preventing method of photo masks
JPS5618429A (en) Minute electrode formation
JPS57212445A (en) Production of photomask
JPS53120374A (en) Production of photo mask
JPS5984245A (en) Photomask
JPS56116624A (en) Manufacture of semiconductor device
JPS5672512A (en) Formation of tiny electrode
JPS5689741A (en) Dryplate for photomasking
JPS5477070A (en) Production of photo mask
JPS545659A (en) Manufacture of semiconductor device
JPS5437579A (en) Chrome plate
JPS5656633A (en) Manufacture of semiconductor element