JPS5672512A - Formation of tiny electrode - Google Patents
Formation of tiny electrodeInfo
- Publication number
- JPS5672512A JPS5672512A JP14981979A JP14981979A JPS5672512A JP S5672512 A JPS5672512 A JP S5672512A JP 14981979 A JP14981979 A JP 14981979A JP 14981979 A JP14981979 A JP 14981979A JP S5672512 A JPS5672512 A JP S5672512A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- electrode
- treatment
- mask
- tiny
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Weting (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE:To easily form a tiny transposition electrode, by removing the area which is not masked, from on the plate, by means of the etching treatment by which a metallic layer for the electrode to the chromium layer is made a mask. CONSTITUTION:A chromium layer 11 is attached by vapor deposition on the elastic substrate 1. A photoresist material layer 2 is formed on the layer 11 by means of application, and the selective exposure treatment to the layer 2 and the subsequent developing treatment are performed. A mask layer 3 corresponding to the pattern of a tiny electrode is formed on the layer 11, and a metallic layer 4 for the electrode is attached by means of the vapor deposition treatment by which the layer 3 to the layer 11 is made a mask. The mask layer 3 is removed from the layer 11 by performing the dissolving treatment to the layer 3. A chromium layer 12 under the metallic layer 4 for the electrode is formed by the layer 11 by removing the area which is not masked by the layer 4, from on the elastic substrate 1.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14981979A JPS5672512A (en) | 1979-11-19 | 1979-11-19 | Formation of tiny electrode |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14981979A JPS5672512A (en) | 1979-11-19 | 1979-11-19 | Formation of tiny electrode |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5672512A true JPS5672512A (en) | 1981-06-16 |
Family
ID=15483387
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14981979A Pending JPS5672512A (en) | 1979-11-19 | 1979-11-19 | Formation of tiny electrode |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5672512A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0653768A (en) * | 1980-11-17 | 1994-02-25 | British Technol Group Ltd | Manufacture of sound-wave device |
-
1979
- 1979-11-19 JP JP14981979A patent/JPS5672512A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0653768A (en) * | 1980-11-17 | 1994-02-25 | British Technol Group Ltd | Manufacture of sound-wave device |
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