JPS55143560A - Manufacture of photomask - Google Patents
Manufacture of photomaskInfo
- Publication number
- JPS55143560A JPS55143560A JP5182479A JP5182479A JPS55143560A JP S55143560 A JPS55143560 A JP S55143560A JP 5182479 A JP5182479 A JP 5182479A JP 5182479 A JP5182479 A JP 5182479A JP S55143560 A JPS55143560 A JP S55143560A
- Authority
- JP
- Japan
- Prior art keywords
- film
- etching
- pattern
- lsi
- resist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000005530 etching Methods 0.000 abstract 4
- 238000010894 electron beam technology Methods 0.000 abstract 3
- 239000011521 glass Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 abstract 1
- 230000001070 adhesive effect Effects 0.000 abstract 1
- 239000011651 chromium Substances 0.000 abstract 1
- 229910000423 chromium oxide Inorganic materials 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 229910052736 halogen Inorganic materials 0.000 abstract 1
- 150000002367 halogens Chemical class 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 229910044991 metal oxide Inorganic materials 0.000 abstract 1
- 150000004706 metal oxides Chemical class 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract 1
- 229920000642 polymer Polymers 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/80—Etching
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5182479A JPS55143560A (en) | 1979-04-26 | 1979-04-26 | Manufacture of photomask |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5182479A JPS55143560A (en) | 1979-04-26 | 1979-04-26 | Manufacture of photomask |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS55143560A true JPS55143560A (en) | 1980-11-08 |
JPS62493B2 JPS62493B2 (enrdf_load_stackoverflow) | 1987-01-08 |
Family
ID=12897630
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5182479A Granted JPS55143560A (en) | 1979-04-26 | 1979-04-26 | Manufacture of photomask |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55143560A (enrdf_load_stackoverflow) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55144245A (en) * | 1979-04-27 | 1980-11-11 | Mitsubishi Electric Corp | Manufacture of photomask |
US5302236A (en) * | 1990-10-19 | 1994-04-12 | Tokyo Electron Limited | Method of etching object to be processed including oxide or nitride portion |
US6309976B1 (en) * | 1999-03-22 | 2001-10-30 | Taiwan Semiconductor Manufacturing Company | Critical dimension controlled method of plasma descum for conventional quarter micron and smaller dimension binary mask manufacture |
DE10146935A1 (de) * | 2001-09-24 | 2003-04-17 | Infineon Technologies Ag | Verfahren zum Herstellen einer Fotomaske |
-
1979
- 1979-04-26 JP JP5182479A patent/JPS55143560A/ja active Granted
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55144245A (en) * | 1979-04-27 | 1980-11-11 | Mitsubishi Electric Corp | Manufacture of photomask |
US5302236A (en) * | 1990-10-19 | 1994-04-12 | Tokyo Electron Limited | Method of etching object to be processed including oxide or nitride portion |
US6309976B1 (en) * | 1999-03-22 | 2001-10-30 | Taiwan Semiconductor Manufacturing Company | Critical dimension controlled method of plasma descum for conventional quarter micron and smaller dimension binary mask manufacture |
DE10146935A1 (de) * | 2001-09-24 | 2003-04-17 | Infineon Technologies Ag | Verfahren zum Herstellen einer Fotomaske |
Also Published As
Publication number | Publication date |
---|---|
JPS62493B2 (enrdf_load_stackoverflow) | 1987-01-08 |
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